TN12, TS12 and TYNx12 Series 12A SCRs SENSITIVE & STANDARD MAIN FEATURES: A Symbol Value Unit IT(RMS) 12 A V DRM/VRRM 600 to 1000 V IGT 0.2 to 15 mA G K A A K A K A G DESCRIPTION Available either in sensitive (TS12) or standard (TYN, TN12...) gate triggering levels, the 12A SCR series is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, in-rush current limiting circuits, capacitive discharge ignition, voltage regulation circuits... Available in though-hole or surface-mount packages, they provide an optimized performance in a limited space area. G DPAK (TS12-B) (TN12-B) D 2PAK (TN12-G) A A K A K G A IPAK (TS12-H) (TN12-H) G TO-220AB (TYN) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT (AV) Parameter Value Unit RMS on-state current (180 conduction angle) Tc = 105C 12 A Average on-state current (180 conduction angle) Tc = 105C 8 A DPAK / IPAK D PAK / TO-220AB 115 146 110 140 60 98 Non repetitive surge peak on-state current tp = 8.3 ms I t Value for fusing tp = 10 ms Tj = 25C dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns F = 60 Hz Tj = 125C 50 A/s IGM Peak gate current tp = 20 s Tj = 125C 4 A Tj = 125C 1 W - 40 to + 150 - 40 to + 125 C 5 V ITSM It PG(AV) Tstg Tj VRGM tp = 10 ms Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage (for TN12 & TYN) September 2000 - Ed: 3 Tj = 25C A AS 1/10 TN12, TS12 and TYNx12 Series ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) SENSITIVE Symbol IGT Test Conditions RL = 140 VD = 12 V VGT Unit MAX. 200 A MAX. 0.8 V MIN. 0.1 V MIN. 8 V VGD VD = VDRM VRG IRG = 10 A IH IT = 50 mA RGK = 1 k MAX. 5 mA IL IG = 1 mA R GK = 1 k MAX. 6 mA Tj = 125C MIN. 5 V/s Tj = 25C MAX. 1.6 V RL = 3.3 k R GK = 1 k RGK = 220 dV/dt VD = 67 % VDRM VTM ITM = 24 A Vt0 Threshold voltage Tj = 125C MAX. 0.85 V Rd Dynamic resistance Tj = 125C MAX. 30 m Tj = 25C MAX. 5 A 2 mA IDRM IRRM Tj = 125C TS1220 tp = 380 s RGK = 220 VDRM = VRRM Tj = 125C STANDARD TN1215 Symbol Unit B/H IGT RL = 33 VD = 12 V VGT VGD VD = VDRM RL = 3.3 k IH IT = 500 mA Gate open IL IG = 1.2 IGT dV/dt VD = 67 % VDRM VTM ITM = 24 A Vt0 Rd IDRM IRRM TYN Test Conditi ons Gate open Tj = 125C G x12T x12 MIN. 2 0.5 2 MAX. 15 5 15 mA MAX. 1.3 V MIN. 0.2 V MAX. 40 30 15 30 mA MAX. 80 60 30 60 mA 40 200 V/s Tj = 125C MIN. Tj = 25C MAX. 1.6 V Threshold voltage Tj = 125C MAX. 0.85 V Dynamic resistance Tj = 125C MAX. 30 m Tj = 25C MAX. 5 A 2 mA tp = 380 s VDRM = VRRM 200 Tj = 125C THERMAL RESISTANCES Symbol Parameter Rth(j-c) Junction to case (DC) R th(j-a) Junction to ambient S = Copper surface under tab 2/10 Value Unit 1.3 C/W TO-220AB 60 C/W IPAK 100 S = 1 cm D PAK 45 S = 0.5 cm DPAK 70 TN12, TS12 and TYNx12 Series PRODUCT SELECTOR Voltage (xxx) Part Number 600 V 700 V 800 V Sensitivity Package 15 mA DPAK 15 mA D PAK 15 mA IPAK 1000 V TN1215-xxxB X X TN1215-xxxG X X TN1215-xxxH X X TS1220-xxxB X X 0.2 mA DPAK TS1220-xxxH X X 0.2 mA IPAK TYNx12 X X X 30 mA TO-220AB TYNx12T X X X 15 mA TO-220AB X ORDERING INFORMATION TN 12 15 - 600 B (-TR) STANDARD SCR SERIES CURRENT: 12A SENSITIVITY: 15: 15mA VOLTAGE: 600: 600V 800: 800V 1000: 1000V PACKING MODE: Blank: Tube 2 -TR: D PAK & DPAK Tape & Reel PACKAGE: B: DPAK H: IPAK 2 G: D PAK TS 12 20 - 600 B (-TR) SENSITIVE SCR SERIES CURRENT: 12A SENSITIVITY: 20: 200A TYN 6 VOLTAGE: 600: 600V 700: 700V 12 STANDARD SCR SERIES VOLTAGE: 600: 600V 800: 800V 1000: 1000V PACKAGE: B: DPAK H: IPAK PACKING MODE: Blank: Tube -TR: DPAK Tape & Reel T SENSITIVITY: Blank: 30mA T: 15mA CURRENT: 12A 3/10 TN12, TS12 and TYNx12 Series OTHER INFORMATION Part Number Marking Weight Base Quantity Packing mode TN1215-x00B TS1215x00 0.3 g 75 Tube TN1215-x00B-TR TS1215x00 0.3 g 2500 Tape & reel TN1215-x00G TS1215x00G 1.5 g 50 Tube TN1215-x00G-TR TS1215x00G 1.5 g 1000 Tape & reel TN1215-x00H TN1215x00 0.4 g 75 Tube TS1220-x00B TS1220x00 0.3 g 75 Tube TS1220-x00B-TR TS1220x00 0.3 g 2500 Tape & reel TS1220-x00H TS1220x00 0.4 g 75 Tube TYNx12 TYNx12 2.3 g 250 Bulk TYNx12RG TYNx12 2.3 g 50 Tube TYNx12T TYNx12T 2.3 g 250 Bulk TYNx12TRG TYNx12T 2.3 g 50 Tube Note: x = voltage Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2-1: Average and D.C. on-state current versus case temperature. P(W) 12 11 10 9 8 7 6 5 4 3 2 1 0 IT(av)(A) 14 = 180 DC 12 10 = 180 8 6 360 1 2 3 4 5 2 IT(av)(A) 0 4 6 7 8 9 Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout) (DPAK and D2PAK). 0 Tcase(C) 0 25 50 75 100 125 Fig. 3-1: Relative variation of thermal impedance junction to case versus pulse duration. IT(av)(A) K = [Zth(j-c)/Rth(j-c)] 3.0 1.0 2.5 DC D 2PAK 2.0 1.5 0.5 = 180 DPAK 1.0 0.2 0.5 0.0 4/10 tp(s) Tamb(C) 0 25 50 75 100 125 0.1 1E-3 1E-2 1E-1 1E+0 TN12, TS12 and TYNx12 Series Fig. 3-2: Relative variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, FR4 PC board). Fig. 4-1: Relative variation of gate trigger current, holding current and latching versus junction temperature for TS12 series. K = [Zth(j-a)/Rth(j-a)] IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25C] 1.00 DPAK D2PAK 0.10 TO-220AB tp(s) 0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 4-2: Relative variation of gate trigger current, holding current and latching current versus junction temperature for TN12 & TYN series. IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25C] 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 IGT IH & IL Tj(C) -20 0 20 40 60 80 100 120 140 Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values) for TS12 series. 10.0 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 IH & IL Rgk = 1k Tj(C) -20 0 20 40 60 80 100 120 140 Fig. 5: Relative variation of holding current versus gate-cathode resistance (typical values) for TS12 series. IH[Rgk] / IH[Rgk = 1k] 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 Rgk(k) 0.0 1E-2 1E-1 1E+0 Tj = 25C 1E+1 Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values) for TS12 series. dV/dt[Rgk] / dV/dt [Rgk = 220] Tj = 125C VD = 0.67 x VDRM IGT 4.0 dV/dt[Cgk] / dV/dt [Rgk = 220] VD = 0.67 x VDRM Tj = 125C Rgk = 220 3.5 3.0 2.5 1.0 2.0 1.5 1.0 Rgk(k) 0.1 0.0 0.2 0.4 0.6 0.5 0.8 1.0 1.2 0.0 Cgk(nF) 0 25 50 75 100 125 150 5/10 TN12, TS12 and TYNx12 Series Fig. 8: Surge peak on-state current versus number of cycles (TS12/TN12/TYN). 10.0 Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of I t. dV/dt[Rgk] / dV/dt [Rgk = 220] ITSM(A),I2t(A2s) 2000 Tj = 125C VD = 0.67 x VDRM Tjinitial=25C ITSM 1000 TYN/TN12 TS12 dI/dt limitattion 1.0 TYN/TN12 100 I2t TS12 Rgk(k) 0.1 0.0 0.2 0.4 0.6 tp(ms) 0.8 1.0 1.2 Fig. 10: On-state characteristics (maximum values). 10 0.01 100 1.00 10.00 Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 m) . ITM(A) 200 0.10 Rth(j-a)(C/W) 100 Tj max.: Vto = 0.85V Rd = 30m 80 60 Tj = Tjmax. DPAK 10 40 Tj = 25C D 2PAK 20 S(cm2) VTM(V) 1 0.0 6/10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0 2 4 6 8 10 12 14 16 18 20 TN12, TS12 and TYNx12 Series PACKAGE MECHANICAL DATA DPAK (Plastic) DIMENSIONS REF. Millimeters Min. R R A A1 A2 B B2 C C2 D E G H L2 L4 R V2 Max 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 6.40 6.60 4.40 4.60 9.35 10.10 0.80 typ. 0.60 1.00 0.2 typ. 0 8 Inches Min. Max. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.018 0.023 0.236 0.244 0.251 0.259 0.173 0.181 0.368 0.397 0.031 typ. 0.023 0.039 0.007 typ. 0 8 FOOTPRINT DIMENSIONS (in millimeters) DPAK (Plastic) 6.7 6.7 3 3 1.6 1.6 2.3 2.3 7/10 TN12, TS12 and TYNx12 Series PACKAGE MECHANICAL DATA D2PAK (Plastic) DIMENSIONS REF. A E Min. C2 L2 D L L3 A1 B2 R C B G A2 2.0 MIN. FLAT ZONE V2 FOOTPRINT DIMENSIONS (in millimeters) D2PAK (Plastic) 16.90 10.30 5.08 1.30 3.70 8.90 8/10 Millimeters A A1 A2 B B2 C C2 D E G L L2 4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 L3 R V2 1.40 Typ. Inches Max. Min. 4.60 2.69 0.23 0.93 1.40 0.169 0.098 0.001 0.027 0.048 0.60 0.017 1.36 0.047 9.35 0.352 10.28 0.393 5.28 0.192 15.85 0.590 1.40 0.050 1.75 Max. 0.181 0.106 0.009 0.037 0.055 0.024 0.054 0.368 0.405 0.208 0.624 0.055 0.055 0.40 0 Typ. 0.069 0.016 8 0 8 TN12, TS12 and TYNx12 Series PACKAGE MECHANICAL DATA IPAK (Plastic) DIMENSIONS REF. Millimeters Min. A E C2 B2 L2 D H L L1 B3 B6 B A1 V1 B5 G C A3 A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1 Typ. 2.2 0.9 0.7 0.64 5.2 Inches Max. Min. 2.4 1.1 1.3 0.9 5.4 0.85 0.086 0.035 0.027 0.025 0.204 0.3 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 10 Typ. Max. 0.094 0.043 0.051 0.035 0.212 0.033 0.035 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.031 0.039 10 9/10 TN12, TS12 and TYNx12 Series PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS B REF. C Millimeters Inches b2 Min. L F I A l4 c2 a1 l3 l2 a2 b1 M c1 e A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M Typ. 15.20 Max. Min. Typ. 15.90 0.598 3.75 13.00 14.00 0.511 10.00 10.40 0.393 0.61 0.88 0.024 1.23 1.32 0.048 4.40 4.60 0.173 0.49 0.70 0.019 2.40 2.72 0.094 2.40 2.70 0.094 6.20 6.60 0.244 3.75 3.85 0.147 15.80 16.40 16.80 0.622 2.65 2.95 0.104 1.14 1.70 0.044 1.14 1.70 0.044 2.60 Max. 0.625 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.646 0.661 0.116 0.066 0.066 0.102 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Swit zerland - United Kingdom http ://www.st.com 10/10