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TN12, TS12 and TYNx12 Series
SENSITIVE & STANDARD 12A SCRs
September 2000 - Ed: 3
MAIN FEATURES:
DESCRIPTION
Available either in sensitive (TS12) or standard
(TYN, TN12...) gate triggering levels,the 12A SCR
series is suitable to fit all modesof control found in
applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, in-rush current limiting circuits,
capacitive discharge ignition, voltage regulation
circuits...
Available in though-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
Symbol Value Unit
IT(RMS) 12 A
VDRM/VRRM 600 to 1000 V
IGT 0.2 to 15 mA
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (180°conduction angle) Tc = 105°C12 A
IT(AV) Averageon-state current (180°conduction angle) Tc = 105°C8 A
DPAK /
IPAK D
PAK /
TO-220AB
ITSM Non repetitive surge peak
on-state current tp = 8.3 ms Tj = 25°C115 146 A
tp = 10 ms 110 140
I
tI
t Valuefor fusing tp = 10 ms Tj = 25°C60 98A
S
dI/dt Critical rate of rise of on-state
current IG=2xI
GT ,tr≤100 ns F = 60 Hz Tj = 125°C50A/µs
I
GM Peak gate current tp = 20 µs Tj = 125°C4 A
P
G(AV) Average gate power dissipation Tj = 125°C1 W
T
stg
Tj Storage junction temperature range
Operating junction temperature range - 40 to + 150
- 40 to + 125 °C
VRGM Maximum peak reversegate voltage (for TN12 & TYN) 5 V
G
A
K
A
A
KG
DPAK
(TS12-B)
(TN12-B)
A
A
G
K
A
A
K
G
G
A
A
K
D2PAK
(TN12-G)
IPAK
(TS12-H)
(TN12-H) TO-220AB
(TYN)
TN12, TS12 and TYNx12 Series
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ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■SENSITIVE
■STANDARD
THERMAL RESISTANCES
S = Copper surface under tab
Symbol Test Conditions TS1220 Unit
IGT VD=12V R
L= 140 ΩMAX. 200 µA
VGT MAX. 0.8 V
VGD VD=V
DRM RL= 3.3 kΩRGK =1kΩTj = 125°C MIN. 0.1 V
VRG IRG =10µAMIN. 8V
I
H
I
T
=50mA R
GK =1kΩMAX. 5 mA
ILIG= 1 mA RGK =1kΩMAX. 6 mA
dV/dt VD=67%V
DRM RGK = 220 ΩTj = 125°C MIN. 5 V/µs
VTM ITM = 24 A tp = 380 µsTj = 25°C MAX. 1.6 V
Vt0 Threshold voltage Tj = 125°C MAX. 0.85 V
RdDynamic resistance Tj = 125°CMAX. 30 mΩ
I
DRM
IRRM VDRM =V
RRM RGK = 220 ΩTj = 25°CMAX. 5 µA
Tj = 125°C2mA
Symbol Test Conditions TN1215 TYN Unit
B/H G x12T x12
IGT VD=12V R
L=33ΩMIN. 2 0.5 2 mA
MAX. 15 5 15
VGT MAX. 1.3 V
VGD VD=V
DRM RL= 3.3 kΩTj = 125°C MIN. 0.2 V
IHIT= 500 mA Gate open MAX.40301530 mA
I
L
I
G
= 1.2 IGT MAX. 80 60 30 60 mA
dV/dt VD=67%V
DRM Gate open Tj = 125°C MIN. 200 40 200 V/µs
VTM ITM = 24 A tp = 380 µsTj = 25°CMAX. 1.6 V
Vt0 Threshold voltage Tj = 125°CMAX. 0.85 V
RdDynamic resistance Tj = 125°CMAX. 30 mΩ
IDRM
IRRM VDRM =V
RRM Tj = 25°C MAX. 5 µA
Tj = 125°C2
mA
Symbol Parameter Value Unit
Rth(j-c) Junction to case (DC) 1.3 °C/W
Rth(j-a) Junction to ambient TO-220AB 60 °C/W
IPAK 100
S=1cm
D
PAK 45
S = 0.5 cm
DPAK 70
TN12, TS12 and TYNx12 Series
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PRODUCT SELECTOR
ORDERING INFORMATION
Part Number Voltage (xxx) Sensitivity Package
600 V 700 V 800 V 1000 V
TN1215-xxxB X X 15 mA DPAK
TN1215-xxxG X X X 15 mA D
PAK
TN1215-xxxH X X 15 mA IPAK
TS1220-xxxB X X 0.2 mA DPAK
TS1220-xxxH X X 0.2 mA IPAK
TYNx12 X X X 30 mA TO-220AB
TYNx12T X X X 15 mA TO-220AB
TN 12 15 - 600 B (-TR)
STANDARD
SCR
SERIES
CURRENT: 12A SENSITIVITY:
15: 15mA VOLTAGE:
600: 600V
800: 800V
1000: 1000V
PACKAGE:
B: DPAK
H: IPAK
G: D PAK
2
PACKING MODE:
Blank:Tube
-TR: D PAK & DPAK
Tape& Reel
2
TS 12 20 - 600 B (-TR)
SENSITIVE
SCR
SERIES
CURRENT:12A SENSITIVITY:
20: 200µAVOLTAGE:
600: 600V
700: 700V
PACKAGE:
B: DPAK
H: IPAK
PACKING MODE:
Blank:Tube
-TR: DPAKTape & Reel
TYN 6 12 T
STANDARD
SCR
SERIES
CURRENT:12A
SENSITIVITY:
Blank: 30mA
T:15mA
VOLTAGE:
600: 600V
800: 800V
1000: 1000V
TN12, TS12 and TYNx12 Series
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OTHER INFORMATION
Note: x = voltage
Part Number Marking Weight Base Quantity Packing mode
TN1215-x00B TS1215x00 0.3 g 75 Tube
TN1215-x00B-TR TS1215x00 0.3 g 2500 Tape & reel
TN1215-x00G TS1215x00G 1.5 g 50 Tube
TN1215-x00G-TR TS1215x00G 1.5 g 1000 Tape & reel
TN1215-x00H TN1215x00 0.4 g 75 Tube
TS1220-x00B TS1220x00 0.3 g 75 Tube
TS1220-x00B-TR TS1220x00 0.3 g 2500 Tape & reel
TS1220-x00H TS1220x00 0.4 g 75 Tube
TYNx12 TYNx12 2.3 g 250 Bulk
TYNx12RG TYNx12 2.3 g 50 Tube
TYNx12T TYNx12T 2.3 g 250 Bulk
TYNx12TRG TYNx12T 2.3 g 50 Tube
Fig. 1: Maximum average power dissipation
versus averageon-state current. Fig. 2-1: Average and D.C. on-state current
versus case temperature.
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout) (DPAK and
D2PAK).
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration.
0123456789
0
1
2
3
4
5
6
7
8
9
10
11
12 P(W)
α= 180°
IT(av)(A)
360°
α
0 25 50 75 100 125
0
2
4
6
8
10
12
14 IT(av)(A)
DC
α= 180°
Tcase(°C)
0 25 50 75 100 125
0.0
0.5
1.0
1.5
2.0
2.5
3.0 IT(av)(A)
α= 180°
DC
D2PAK
DPAK
Tamb(°C)
1E-3 1E-2 1E-1 1E+0
0.1
0.2
0.5
1.0 K = [Zth(j-c)/Rth(j-c)]
tp(s)
TN12, TS12 and TYNx12 Series
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Fig. 3-2: Relative variation of thermal
impedance junction to ambient versus pulse
duration (recommended pad layout, FR4 PC
board).
Fig. 4-1: Relative variation of gate trigger
current, holding current and latching versus
junction temperature for TS12 series.
Fig. 4-2: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature for TN12 & TYN
series.
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values)
for TS12 series.
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values)
for TS12 series.
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values)
for TS12 series.
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00 K = [Zth(j-a)/Rth(j-a)]
DPAK
TO-220AB
D2PAK
tp(s)
-40 -20 0 20 40 60 80 100 120 140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0 IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25°C]
IGT
IH & IL
Rgk = 1kΩ
Tj(°C)
-40 -20 0 20 40 60 80 100 120 140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4 IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25°C]
IGT
IH & IL
Tj(°C)
1E-2 1E-1 1E+0 1E+1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0 IH[Rgk] / IH[Rgk = 1kΩ]
Tj = 25°C
Rgk(kΩ)
dV/dt[Rgk] / dV/dt [Rgk = 220 ]Ω
Rgk(k )Ω
Tj = 125°C
VD = 0.67 x VDRM
0.1
1.0
10.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0 VD = 0.67 x VDRM
Tj = 125°C
Rgk = 220Ω
dV/dt[Cgk] / dV/dt [Rgk = 220 ]Ω
Cgk(nF)
TN12, TS12 and TYNx12 Series
6/10
Fig. 8: Surge peak on-state current versus
number of cycles (TS12/TN12/TYN). Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I t.
Fig. 10: On-state characteristics (maximum
values). Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm) .
Tj = 125°C
VD = 0.67 x VDRM
dV/dt[Rgk] / dV/dt [Rgk = 220 ]Ω
10.0
1.0
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Rgk(k )Ω
0.01 0.10 1.00 10.00
10
100
1000
2000 ITSM(A),I2t(A2s)
Tjinitial=25°C
ITSM
I2t
dI/dt
limitattion
TYN/TN12
TS12
TS12
TYN/TN12
tp(ms)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1
10
100
200 ITM(A)
Tj max.:
Vto = 0.85V
Rd = 30mΩ
Tj =Tjmax.
Tj = 25°C
VTM(V) 0 2 4 6 8 101214161820
0
20
40
60
80
100 Rth(j-a)(°C/W)
DPAK
D2PAK
S(cm2)
TN12, TS12 and TYNx12 Series
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PACKAGE MECHANICAL DATA
DPAK (Plastic)
REF.
DIMENSIONS
Millimeters Inches
Min. Max Min. Max.
A 2.20 2.40 0.086 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212
C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.018 0.023
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.251 0.259
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.397
L2 0.80 typ. 0.031 typ.
L4 0.60 1.00 0.023 0.039
R 0.2 typ. 0.007 typ.
V2 0°8°0°8°
R
R
FOOTPRINT DIMENSIONS (in millimeters)
DPAK (Plastic)
6.7
6.7
3
3
1.61.6
2.32.3
TN12, TS12 and TYNx12 Series
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PACKAGE MECHANICAL DATA
D2PAK (Plastic)
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.30 4.60 0.169 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
B2 1.25 1.40 0.048 0.055
C 0.45 0.60 0.017 0.024
C2 1.21 1.36 0.047 0.054
D 8.95 9.35 0.352 0.368
E 10.00 10.28 0.393 0.405
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
R 0.40 0.016
V2 0°8°0°8°
A
C2
D
R
2.0 MIN.
FLAT ZONE
A2
V2
C
A1
G
L
L3
L2
B
B2
E
FOOTPRINT DIMENSIONS (in millimeters)
D2PAK (Plastic)
8.90 3.70
1.30
5.08
16.90
10.30
TN12, TS12 and TYNx12 Series
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PACKAGE MECHANICAL DATA
IPAK (Plastic)
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.035
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
V1 10°10°
HLL1
G
B5
B
V1
D
C
A1
A3
A
C2
B3
B6
L2
E
B2
TN12, TS12 and TYNx12 Series
10/10
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
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PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 15.20 15.90 0.598 0.625
a1 3.75 0.147
a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
I 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102
M
B
l4
C
b2
a2
l2
c2
l3
b1
a1
A
F
L
I
ec1
