Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Ty
p
Max
48 62.5
74 110
RθJL 35 40
W
Maximum Junction-to-Lead CSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
°C/W
Maximum Junction-to-Ambient ASteady-State °C/W
±20Gate-Source Voltage
Drain-Source Voltage -30
Continuous Drain
Current A
Maximum UnitsParameter
TA=25°C
TA=70°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V
-5.6
-30
Pulsed Drain Current B
Power Dissipation A
TA=25°C
Junction and Storage Temperature Range
A
PD
°C
2
1.28
-55 to 150
TA=70°C
ID
-7.1
AO4813
Dual P-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = -30V
ID = -7.1 A (VGS = -10V)
RDS(ON) < 25mΩ (VGS = -10V)
RDS(ON) < 40mΩ (VGS = -4.5V)
General Description
The AO4813 uses advanced trench technology to
provide excellent RDS(ON), and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard product AO4813 is Pb-free
(meets ROHS & Sony 259 specifications). AO4813L
is a Green Product ordering option. AO4813 and
A
O4813L are electrically identical.
SOIC-8
Top View
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5G1
D1
S1 G2
D2
S2
Alpha & Omega Semiconductor, Ltd.
AO4813
Symbol Min Typ Max Units
BVDSS -30 V
-1
TJ=55°C -5
IGSS ±100 nA
VGS(th) -1.4 -2 -2.7 V
ID(ON) -30 A
20 25
TJ=125°C 27 33
29 40 mΩ
gFS 19.6 S
VSD -0.7 -1 V
IS-4.2 A
Ciss 1573 pF
Coss 319 pF
Crss 211 pF
Rg6.7 Ω
Qg(10V) 30.9 nC
Qg(4.5V) 16.1 nC
Qgs 8nC
Qgd 4.4 nC
tD(on) 9.5 ns
tr8ns
tD(off) 44.2 ns
tf22.2 ns
trr 25.5 ns
Qrr 14.7 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-7.1A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=-250µA, VGS=0V
VGS=-10V, VDS=-5V
VGS=-10V, ID=-7.1A
Reverse Transfer Capacitance
IF=-7.1A, dI/dt=100A/µs
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
IDSS µA
Gate Threshold Voltage VDS=VGS ID=-250µA
VDS=-24V, VGS=0V
VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
mΩ
VGS=-4.5V, ID=-5.6A
IS=-1A,VGS=0V
VDS=-5V, ID=-7.1A
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=2.2Ω,
RGEN=3Ω
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=0V, VDS=-15V, f=1MHz
Gate Drain Charge
Total Gate Charge (10V)
VGS=-10V, VDS=-15V, ID=-7.1A
A: The value of R
θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Rev 3 : Sept 2005
Alpha & Omega Semiconductor, Ltd.
AO4813
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
0
5
10
15
20
25
30
012345
-VDS (Volts)
Fig 1: On-Region Characteristics
-ID (A)
VGS=-3V
-5V
-3.5V
-4V
-10V
0
5
10
15
20
25
30
1 1.5 2 2.5 3 3.5 4 4.5 5
-VGS(Volts)
Figure 2: Transfer Characteristics
-ID(A)
10
15
20
25
30
35
40
0 5 10 15 20 25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
-IS (A)
25°C
125°C
0.80
1.00
1.20
1.40
1.60
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
VGS=-10V
VGS=-4.5V
ID=-5.6A
10
20
30
40
50
60
345678910
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=-5V
VGS=-4.5V
VGS=-10V
ID=-7.1A
25°C
125°C
ID=-7.1A
Alpha & Omega Semiconductor, Ltd.
AO4813
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
0
2
4
6
8
10
0 4 8 12 16 20 24 28 32
-Qg (nC)
Figure 7: Gate-Charge Characteristics
-VGS (Volts)
0
250
500
750
1000
1250
1500
1750
2000
2250
0 5 10 15 20 25 30
-VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power ( W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Coss Crss
0.1
1.0
10.0
100.0
0.1 1 10 100
-VDS (Volts)
-ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
10ms
1ms
0.1s
1s
10s
D
C
RDS(ON)
limited
T
J(
M
a
x
)
=150°C, T
A
=25°C
VDS=-15V
ID=-7.1A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
10µs
Ton T
P
D
Alpha & Omega Semiconductor, Ltd.
