SA58640DK,118 - NXP SEMICONDUCTORS

1. Introduction

The SA58640 was designed for cordless telephone applications in which efficient and

economic integrated solutions are required and yet high performance is desirable.

Although the product is not targeted to meet the stringent specifications of high

performance cellular equipment, it will exceed the needs for analog cordless phones. The

minimal amount of external compone nts and absence of any external adjustments makes

for a very economical solution.

2. General description

The SA58640 is a low-voltage monolithic FM IF system incorporating a mixer/oscillator,

two limiting intermediate frequency amplifiers, quadrature detector, logarithmic RSSI,

voltage regu lator and audio and RSSI op erationa l amplifiers. The SA58640 is available in

a 20-pin SSOP package.

3. Features and benefits

Low power consum pt ion : 5.0 mA typical at 5 V

Mixer input to >100 MHz

Mixer conversion power gain of 17 dB at 45 MHz

Crystal oscillator effective to 100 MHz (LC oscillator or external oscillator can be used

at higher frequencies)

102 dB of IF amplifier/limiter gain

2 MHz IF amplifier/limiter small signal bandwidth

Temperature compensated logarithmic RSSI with a 70 dB dynamic range

Low external com p on e nt count; suitable for crystal/ceramic/LC filters

Audio output internal op amp

RSSI output internal op amp

Internal op amps with rail-to-rail outputs

ESD protection: Human body model 2 kV; robot model 200 V

4. Applications

Cordless telephones

SA58640

Low-voltage mixer FM IF system

Rev. 3 — 12 April 2011 Product data sheet

Product data sheet Rev. 3 — 12 April 2011 2 of 20

NXP Semiconductors SA58640

Low-voltage mixer FM IF system

5. Ordering information

6. Block diagram

Table 1. Ordering information

Type number Package

Name Description Version

SA58640DK SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

Fig 1. Block diagram of SA58640

002aab12

20 19 18 17 16 15 14 13 12 11

RSSI

EB VREG

OSCILLATOR

limiter

mixer

quad

audio

IF amp

10987

54321

RF_IN_P OSCOUT RSSI_OUT

SA58640

AUDIO_FB RSSI_FB

RF_IN_N_DEC

MIXER_OUT

IF_AMP_DEC

IF_AMP_IN

IF_AMP_DEC

IF_AMP_OUT

GND

LIM_IN

LIM_DEC

LIM_OUT

OSCIN VCC AUDIO_OUT QUAD_IN

Product data sheet Rev. 3 — 12 April 2011 3 of 20

NXP Semiconductors SA58640

Low-voltage mixer FM IF system

7. Pinning information

7.1 Pinning

7.2 Pin description

Fig 2. Pin confi gura tio n for SSOP2 0

SA58640DK

RF_IN_P MIXER_OUT

RF_IN_N_DEC IF_AMP_DEC

OSCOUT IF_AMP_IN

OSCIN IF_AMP_DEC

RSSI_OUT IF_AMP_OUT

VCC GND

AUDIO_FB LIM_IN

AUDIO_OUT LIM_DEC

RSSI_FB LIM_DEC

QUAD_IN LIM_OUT

002aab134

Table 2. Pin description

Symbol Pin Description

RF_IN_P 1 positive RF mixer input

RF_IN_N_DEC 2 negative RF mixer input, decoupling

OSCOUT 3 oscillator output (emitter)

OSCIN 4 oscillator input (base)

RSSI_OUT 5 RSSI amplifier output

VCC 6 positive supply

AUDIO_FB 7 audio amplifier negative input, feedback

AUDIO_OUT 8 audio amplifier output

RSSI_FB 9 RSSI amplifier negative input, feedback

QUAD_IN 10 quadrature detector input

LIM_OUT 11 limiter amplifier output

LIM_DEC 12 limite r de coupling

LIM_DEC 13 limite r de coupling

LIM_IN 14 limiter amplifier input

GND 15 ground

IF_AMP_OUT 16 IF amplifier output

IF_AMP_DEC 17 IF amplifier decoupling

IF_AMP_IN 18 IF amplifier input

IF_AMP_DEC 19 IF amplifier decoupling

MIXER_OUT 20 mixer output

Product data sheet Rev. 3 — 12 April 2011 4 of 20

NXP Semiconductors SA58640

Low-voltage mixer FM IF system

8. Functional description

The SA58640 is an IF signa l pr ocessing system su itable for second IF systems with in put

frequency as high as 100 MHz. The bandwidth of the IF amplifier and limiter is at least

2 MHz with 90 dB of gain. The gain/bandwidth distribution is optimized for 455 kHz,

1.5 kΩ source applications. The overall system is well-suited to battery operation as well

as and high quality products of all types.

The input stage is a Gilbert cell mixer with oscillator. Typical mixer characteristics include

a noise figure of 7.0 dB, conversion gain of 17 dB, and input third-order intercept of

−10 dBm. The oscillator will operate in excess of 100 MHz in LC tank configurations.

Hartley or Colpitts circuits can be used up to 100 MHz for crystal configurations.

The output impedance of the mixer is a 1.5 kΩ resistor permitting direct connection to a

455 kHz ceramic filter . The input resist ance of the limiting IF amplifiers is also 1.5 kΩ. With

most 455 kHz ceramic filters and many crystal filters, no impedance matching network is

necessary. The IF amplifier has 44 dB of gain and 5.5 MHz bandwidth. The IF limiter has

58 dB of gain and 4.5 MHz bandwidth. To achieve optimum linearity of the log signal

strength indicator, there must be a 12 dBV1 insertion loss between the first and second IF

stages. If the IF filter or interstage network does not cause 12 dBV insertion loss, a fixed

or variable resistor or an L pad for simultaneous loss and impedance matching can be

added between the first IF output (pin 16) and the interstage network. The overall gain will

then be 90 dB with 2 MHz bandwidth.

The signal from the second limiting amplifier goes to a Gilbert cell qu adrature detector.

One port of the Gilbert cell is internally driven by the IF. The other output of the IF is

AC-coupled to a tuned quadrature network. This signal, which now has a 90° phase

relationship to the internal signal, drives the other port of the multiplier cell.

The demodulated output of the q uadratu re driv es an internal o p amp. This op amp can be

configured as a unity gain buffer, or for simultaneous gain, filtering, and second-order

temperature compensation if needed. It can drive an AC load as low as 10 kΩ with a

rail-to-rail output.

A log signal strength indicator completes the circuitry. The output range is greater than

70 dB and is temperature compensated. This signal drives an internal op amp. The

op amp is capable of rail-to-rail output. It can be used for gain, filtering, or second-order

temperature compensation of the RSSI, if needed.

1. dBV = 20 log Vo/V

Product data sheet Rev. 3 — 12 April 2011 5 of 20

NXP Semiconductors SA58640

Low-voltage mixer FM IF system

9. Limiting values

10. Static characteristics

[1] RF frequency = 45 MHz; +14.5 dBV RF input step-up; IF frequency = 455 kHz; R17 = 2.4 kΩ and

R18=3.3kΩ; RF level = −45 dBm; FM modulation = 1 kHz with ± 5 kHz peak deviation. Audio output with

de-emphasis filter and C-message weighted filter. See Figure 8 “45 MHz application circuit”. The

parameters listed above are tested using automatic test equipment to assure consistent electrical

characteristics. The limits do not represent the ultimate performance limits of the device. Use of an

optimized RF layout will improve many of the listed parameters.

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCC supply voltage - 7 V

Tstg storage temperature −65 +150 °C

Tamb ambient temperature operating −40 +85 °C

Zth transient thermal impedance - 117 K/W

Table 4. Static characteristics

Tamb =25

C; VCC = +5 V; unless otherwise specified.[1]

Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage 4.5 - 6.0 V

ICC supply current - 5.0 6.0 mA

Product data sheet Rev. 3 — 12 April 2011 6 of 20

NXP Semiconductors SA58640

Low-voltage mixer FM IF system

11. Dynamic characteristics

[1] The generator source impedance is 50 Ω, but the SA58640 input impedance at pin 18 (IF_AMP_IN) is 1500 Ω. As a result, IF level

refers to the actual signal that enters the SA58640 IF amplifier input (pin 18), which is about 21 dB less than the ‘available power’ at the

generator.

Table 5. Dynamic characteristics

Symbol Parameter Conditions Min Typ Max Unit

Mixer/oscillator section (external LO = 220 mV RMS value)

fiinput frequency - 100 - MHz

fosc oscillator frequency - 100 - MHz

NF noise figure at 45 MHz - 7.0 - dB

IP3Iinput third-order intercept

point 50 Ω source;

f1 = 45.0 MHz; f2 = 45.06 MHz;

input RF level = −52 dBm

-−10 - dBm

Gp(conv) conversion power gain matched 14.5 dBV step-up 10 17 - dB

50 Ω source - 2.5 - dB

Ri(RF) RF input resistance single-ended inpu t - 8 - kΩ

Ci(RF) RF input capacitance - 3.0 4.0 pF

Ro(mix) mixer output resistance MIXER_OUT pin 1.25 1.5 - kΩ

IF section

Gamp(IF) IF amplifier gain 50 Ω source - 44 - dB

Glim limiter gain 50 Ω source - 58 - dB

αAM AM rejection 30 % AM 1 kHz - 50 - dB

Vo(aud) audio output voltage gain of two 60 120 - mV

SINAD signal-to-noise-and-distortion

ratio IF level = −110 dBm - 17 - dB

THD total harmonic disto r ti on - −55 - dB

S/N signal-to-noise ratio no modulation for noise - 60 - dB

Vo(RSSI) RSSI output voltage IF; R9 = 2 kΩ[1]

IF level = −110 dBm - 0.5 1.0 V

IF level = −50 dBm - 1.7 2.4 V

αRSSI(range) RSSI range - 60 - dB

Zi(IF) IF input impedance measured on IF_AMP_IN pin 1.3 1.5 - kΩ

Zo(IF) IF output impedance measured on IF_AMP_OUT pin - 0.3 - kΩ

Zi(lim) limiter input impedance measured on LIM_IN pin 1.3 1.5 - kΩ

Zo(lim) limiter output impedance measured on LIM_OUT pin - 0.3 - kΩ

Vo(RMS) RMS output voltage measured on LIM_OUT pin - 130 - mV

RF/IF section (internal LO)

SINAD signal-to-noise-and-distortion

ratio system; RF level = −110 dBm - 12 - dB

Product data sheet Rev. 3 — 12 April 2011 7 of 20

NXP Semiconductors SA58640

Low-voltage mixer FM IF system

12. Performance curves

RF = 45 MHz; IF = 455 kHz.

(1) Fund product.

(2) Third-order product.

(3) 50 Ω input.

Fig 3. Supply current versus ambient temperature Fig 4. Mixer third-order intercept and compression

VCC = 5 V; RF = 45 MHz; deviation = ±5kHz;

Vo(aud)RMS = 117.6 mV.

(1) Audio.

(2) AM rejection.

(3) THD+N.

(4) Noise.

Fig 5. Relative level of audio, AM rejection, THD+N

and noise versus RF level (Tamb =+25°C) Fig 6. RSSI output voltage versus RF level

(VCC =5V)

amb

(°C)

002aab128

(mA)

−55 12510585455−35 25 65−15

= 7 V

5 V

RF(3) input level (dBm)

−66 3414−26 −6−46

002aaf414

−40

−20

−60

IF output power

(dBm)

−80

(1) (2)

RF level (dBm)

−125 −25−45−85 −65−105

002aab131

−25

−55

−45

−35

−15

−5

−65

(1)

(2)

(3)

(4)

relative level

(dB)

RF level (dBm)

−125 −45−65−105 −85

002aab132

1.1

0.7

1.5

1.9

Vo(RSSI)

(V)

0.3

85 °C

27 °C

−40 °C

Product data sheet Rev. 3 — 12 April 2011 8 of 20

NXP Semiconductors SA58640

Low-voltage mixer FM IF system

13. Application information

Fig 7. RMS audio output voltage versus ambient temperature

Tamb (°C)

002aab133

200

150

250

300

100

Vo(aud)RMS

(mV)

−55 12585 105455−35 25 65−15

5 V

VCC = 7 V

The layout is very critical in the performance of the receiver. We highly recommend our demo board layout.

All of the inductors, the quad tank, and their shield must be grounded. A 10 μF to 15 μF or higher value tantalum capacitor on

the supply line is essential. A low frequency ESR screening test on this capacitor will ensure consistent good sensitivity in

production. A 0.1 μF bypass capacitor on the supply pin VCC, and grounded near the 44.545 MHz oscillator improves sensitivity

by 2 dB to 3 dB.

Fig 8. 45 MHz application circuit

002aab12

20 19 18 17 16 15 14 13 12 11

FL1

C23 C21 C18 C17

C26

FL2

R17

2.4 kΩ

R18

3.3 kΩ

C15

IFT1

AUDIO_OUTRSSI_OUT VCC

C14

R19

11 kΩ

R10

10 kΩ

C19

390 pF

C27

2.2 μFC12

R11

10 kΩ

C10

45 MHz input

67891054321

SA58640

Product data sheet Rev. 3 — 12 April 2011 9 of 20

NXP Semiconductors SA58640

Low-voltage mixer FM IF system

[1] This value can be reduced when a battery is the power source.

[2] This is a 30 kHz bandwidth 455 kHz ceramic filter. All the characterization and testing are done with this

wideband filter. A more narrowband 15 kHz bandwidth 455 kHz ceramic filter that may be used as an

alternative selection is Murata CFUKG455KE4A-R0.

[3] R5 can be used to bias the oscillator transistor at a higher current for operation above 45 MHz.

Recommended value is 22 kΩ, but should not be below 10 kΩ.

Table 6. Demo board application compo nent list

Component Value Type

C1 51 pF NPO ceramic

C2 220 pF NPO ceramic

C5 100 nF ±10 % monolithic ceramic

C6 5 pF to 30 pF trim cap

C7 1 nF ceramic

C8 10.0 pF NPO ceramic

C9 100 nF ±10 % monolithic ceramic

C10 10 μF[1] tant alum (minimum)

C12 2.2 μF±10 % tantalum

C14 100 nF ±10 % monolithic ceramic

C15 10 pF NPO ceramic

C17 100 nF ±10 % monolithic ceramic

C18 100 nF ±10 % monolithic ceramic

C19 390 pF ±10 % monolithic ceramic

C21 100 nF ±10 % monolithic ceramic

C23 100 nF ±10 % monolithic ceramic

C26 100 nF ±10 % monolithic ceramic

C27 2.2 μF tantalum

FL1[2] - cera mic filter Murata CFUCF455KB4X-R0

FL2[2] - cera mic filter Murata CFUCF455KB4X-R0

IFT1 330 μH Toko 836AN-0129Z

L1 330 nH Toko A638AN-0158Z

L2 1.2 μH nominal FSLM2520-12K

X1 44.545 MHz crystal ICM4712701

R5[3] - not used in application board

R10 8.2 kΩ±5% 1⁄4W carbon composition

R11 10 kΩ±5% 1⁄4W carbon composition

R17 2.4 kΩ±5% 1⁄4W carbon composition

R18 3.3 kΩ±5% 1⁄4W carbon composition

R19 11 kΩ±5% 1⁄4W carbon composition

Product data sheet Rev. 3 — 12 April 2011 10 of 20

NXP Semiconductors SA58640

Low-voltage mixer FM IF system

Fig 9. SA6x6DK/SA58640DK top view with components

001aal91

TOKO

SA6x6DK SA58640DK

C10

FT1

C27

C12

4.7 nF

RSSI

VCC

AUDIO

GND

AUDIO_DC

IF = 455 kHzRF IN

45 MHz

820 Ω

C1 C2

C21

C23

44.545 MHz

R11

C15

C14

C17 C18

R19

R17

FIL1

455 kHz

FIL2

R18 C26

C19

R10

Product data sheet Rev. 3 — 12 April 2011 11 of 20

NXP Semiconductors SA58640

Low-voltage mixer FM IF system

Fig 10. SA6x6DK/SA58640DK bottom view (viewed from top)

001aal89

Product data sheet Rev. 3 — 12 April 2011 12 of 20

NXP Semiconductors SA58640

Low-voltage mixer FM IF system

14. Test information

(1) Set your RF generator at 45.000 MHz, use a 1 kHz modulation frequency and a 6 kHz deviation if

you use 16 kHz filters, or 8 kHz if you use 30 kHz filters.

(2) The measured typical sensitivity for 12 dB SINAD should be 0.45 μV or −11 4 dBm at the RF input.

(3) The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a

measure of the quality of the layout and design. If the lowest RSSI voltage is 500 mV or higher, it

means the receiver is in regenerative mode. In that case, the receiver sensitivity will be worse than

expected.

(4) The C-message and de-emphasis filter combination has a peak gain of 10 dB for accurate

measurements. Without the gain, the measurements may be affected by the noise of the scope

and HP339A analyzer . The de-emphasis filter has a fixed −6 dB/octave slope between 300 Hz and

3kHz.

Fig 11. Applicati on c ircuit test setup

SCOPE

SA58640

DEMOBOARD(3)

RSSI AUDIO

002aab12

RF GENERATOR

45 MHz(1)

VCC (+3 V)

DC VOLTMETER

HP339A DISTORTION

ANALYZER(2)

C-MESSAGE(4)

DE-EMPHASIS

FILTER

Product data sheet Rev. 3 — 12 April 2011 13 of 20

NXP Semiconductors SA58640

Low-voltage mixer FM IF system

15. Package outline

Fig 12. Package outline SOT266-1 (SSOP20)

UNIT A1A2A3bpcD

(1) E(1) (1)

ELL

pQZywv θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.15

1.4

1.2

0.32

0.20

0.13

6.6

6.4

4.5

4.3 0.65 1 0.2

6.6

6.2

0.65

0.45

0.48

0.18

0.13 0.1

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

0.75

0.45

SOT266-1 MO-152 99-12-27

03-02-19

detail X

vMA

(A )

0.25

110

20 11

pin 1 index

0 2.5 5 mm

scale

SOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266

-1

max.

1.5

Product data sheet Rev. 3 — 12 April 2011 14 of 20

NXP Semiconductors SA58640

Low-voltage mixer FM IF system

16. Soldering of SMD packages

This text provides a very brief insight into a complex technology. A more in-depth account

of soldering ICs can be found in Application Note AN10365 “Surface mount reflow

soldering description”.

16.1 Introduction to soldering

Soldering is one of the most common methods through which packages are attached to

Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both

the mechanical and the electrical connection. There is no single soldering method that is

ideal for all IC packages. Wave soldering is often preferred when through-hole and

Surface Mount Devices (SMDs) are mixed on on e printed wiring board; however, it is not

suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high

densities that come with increased miniaturization.

16.2 Wave and reflow soldering

W ave soldering is a joining te chnology in which the joints are m ade by solder coming from

a standing wave of liquid solder. The wave soldering process is suitable for the following:

•Through-hole components

•Leaded or leadless SMDs, which are glued to the surface of the printed circuit board

Not all SMDs can be wave soldered. Packages with solder balls, and some leadless

packages which have solde r lands underneath the body, cannot be wave soldered. Also,

leaded SMDs with leads ha ving a pitch smaller than ~0.6 mm cannot be wave soldered,

due to an increased probability of bridging.

The reflow soldering process involves applying solder paste to a board, followed by

component placement and exposure to a temperature profile. Leaded packages,

packages with solder balls, and leadless packages are all reflow solde rable.

Key characteristics in both wave and reflow soldering are:

•Board specifications, including the board finish, solder masks and vias

•Package footprints, including solder thieves and orientation

•The moisture sensitivity level of the packages

•Package placement

•Inspection and repair

•Lead-free soldering ve rsus SnPb soldering

16.3 Wave soldering

Key characteristics in wave soldering are:

•Process issues, such as application of adhesive and flux, clinching of leads, board

transport, the solder wave parameters, and the time during which components are

exposed to the wave

•Solder bath specifications, including temperature and impurities

Product data sheet Rev. 3 — 12 April 2011 15 of 20

NXP Semiconductors SA58640

Low-voltage mixer FM IF system

16.4 Reflow soldering

Key characteristics in reflow soldering are :

•Lead-free ve rsus SnPb soldering; note th at a lead-free reflow process usua lly leads to

higher minimum peak temperatures (see Figure 13) than a SnPb process, thus

reducing the process window

•Solder paste printing issues including smearing, release, and adjusting the process

window for a mix of large and small components on one board

•Reflow temperature profile; this profile includes preheat, reflow (in which the board is

heated to the peak temperature) an d cooling down. It is imperative that the peak

temperature is high enoug h for the solder to make reliable solder joint s (a solder paste

characteristic). In addition, the peak temperature must be low enough that the

packages and/or boards are not damaged. The peak temperature of th e package

depends on p ackage thickness and volume and is classified in accordance with

Table 7 and 8

Moisture sensitivity precautions, as indicated on the packing, must be respected at all

times.

Studies have shown that small packages reach higher temperatures during reflow

soldering, see Figure 13.

Table 7. SnPb eutectic process (from J-STD-020C)

Package thickness (mm) Package reflow temperature (°C)

Volume (mm3)

< 350 ≥ 350

< 2.5 235 220

≥ 2.5 220 220

Table 8. Lead-free process (from J-ST D-020C)

Package thickness (mm) Package reflow temperature (°C)

Volume (mm3)

< 350 350 to 2000 > 2000

< 1.6 260 260 260

1.6 to 2.5 260 250 245

> 2.5 250 245 245

Product data sheet Rev. 3 — 12 April 2011 16 of 20

NXP Semiconductors SA58640

Low-voltage mixer FM IF system

For further informa tion on temperature profiles, refer to Application Note AN10365

“Surface mount reflow soldering description”.

17. Abbreviations

MSL: Moisture Sensitivity Level

Fig 13. Temperature profiles for large and small components

001aac84

temperature

time

minimum peak temperature

= minimum soldering temperature

maximum peak temperature

= MSL limit, damage level

peak

temperature

Table 9. Abbreviations

Acronym Description

AC Alternating Current

AM Amplitude Modulation

ESD ElectroStatic Discharge

ESR Equivalent Series Resistance

FM Frequency Modulation

IF Intermediate Frequency

LC inductor-capacitor filter

LO Local Oscillator

NPO Negative Positive Zero

RF Radio Frequency

RSSI Received Signal Strength Indicator

SINAD Signal-to-Noise And Distortion ratio

THD Total Harmonic Distortion

Product data sheet Rev. 3 — 12 April 2011 17 of 20

NXP Semiconductors SA58640

Low-voltage mixer FM IF system

18. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

SA58540 v.3 20110412 Product data sheet - SA58640 v.2

Modifications: •Table 6 “Demo board application component list”: Table note [2] is re-written.

SA58540 v.2 20110211 Product data sheet - SA58640 v.1

SA58640 v.1 20050406 Product data sheet - -

Product data sheet Rev. 3 — 12 April 2011 18 of 20

NXP Semiconductors SA58640

Low-voltage mixer FM IF system

19. Legal information

19.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

19.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

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data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

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Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

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changes to information published in this document, including without

limitation specifications and product descripti ons, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

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authorized or warranted to be suit able for use in life support, life-crit ical or

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malfunction of an NXP Semiconductors product can reasonably be expect ed

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therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

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Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property right s.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification fo r product development.

Preliminary [short] dat a sheet Qualification T his document contains data from the preliminary specification.

Product [short] data sheet Production This document cont ains the product specification.

Product data sheet Rev. 3 — 12 April 2011 19 of 20

NXP Semiconductors SA58640

Low-voltage mixer FM IF system

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors prod uct is automotive qualified,

the product is not suitable for automo tive use. It i s neit her qua lif ied nor test ed

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standards, custome r

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such au tomotive applications, use and specifi cations, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconduct ors for an y

liability, damages or failed product cl aims resulting f rom customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

19.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

20. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors SA58640

Low-voltage mixer FM IF system

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 12 April 2011

Document identi fier: SA58640

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

21. Contents

1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 General description. . . . . . . . . . . . . . . . . . . . . . 1

3 Features and benefits . . . . . . . . . . . . . . . . . . . . 1

4 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

5 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2

7 Pinning information. . . . . . . . . . . . . . . . . . . . . . 3

7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Functional description . . . . . . . . . . . . . . . . . . . 4

9 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5

10 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5

11 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6

12 Performance curves . . . . . . . . . . . . . . . . . . . . . 7

13 Application information. . . . . . . . . . . . . . . . . . . 8

14 Test information. . . . . . . . . . . . . . . . . . . . . . . . 12

15 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13

16 Soldering of SMD packages . . . . . . . . . . . . . . 14

16.1 Introduction to soldering . . . . . . . . . . . . . . . . . 14

16.2 Wave and reflow soldering . . . . . . . . . . . . . . . 14

16.3 Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 14

16.4 Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . 15

17 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 16

18 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17

19 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18

19.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18

19.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

19.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 18

19.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19

20 Contact information. . . . . . . . . . . . . . . . . . . . . 19

21 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20