AP40U03GH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D Simple Drive Requirement Fast Switching Characteristic BVDSS 30V RDS(ON) 25m ID G 20A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-252(H) The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V ID@TC=25 Continuous Drain Current 20 A ID@TC=100 Continuous Drain Current 14 A 1 IDM Pulsed Drain Current 60 A PD@TC=25 Total Power Dissipation 15 W Linear Derating Factor 0.1 W/ TSTG Storage Temperature Range -55 to 175 TJ Operating Junction Temperature Range -55 to 175 Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 10 /W Rthj-a Thermal Resistance Junction-ambient Max. 110 /W Data & specifications subject to change without notice 200720071-1/4 AP40U03GH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance o 2 Min. Typ. Max. Units VGS=0V, ID=250uA 30 - - V VGS=10V, ID=12A - - 25 m VGS=4.5V, ID=8A - - 40 m VDS=VGS, ID=250uA 1 - 3 V VDS=10V, ID=12A - 12 - S IDSS Drain-Source Leakage Current (T j=25 C) VDS=30V, VGS=0V - - 1 uA IGSS Gate-Source Leakage VGS=20V - - 100 nA ID=12A - 8 13 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=24V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 5 - nC VDS=15V - 5 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=12A - 36.5 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 16 - ns tf Fall Time RD=1.25 - 5 - ns Ciss Input Capacitance VGS=0V - 450 720 pF Coss Output Capacitance VDS=25V - 80 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Rg Gate Resistance f=1.0MHz - 1.4 2.1 Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=12A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=12A, VGS=0V, - 20 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 15 - nC Notes: 1.Pulse width limited by Max. junction temperature 2.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP40U03GH 40 60 10V 7.0 V 5.0V 4.5 V ID , Drain Current (A) 50 T C =175 o C ID , Drain Current (A) o T C =25 C 40 30 20 V G = 3.0 V 10V 7 .0V 5.0V 4.5 V 30 20 V G =3.0V 10 10 0 0 0.0 1.0 2.0 3.0 0.0 4.0 V DS , Drain-to-Source Voltage (V) 1.0 2.0 3.0 4.0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 36 I D =12A I D =12A V G =10V T C =25 o C 32 Normalized RDS(ON) RDS(ON) (m) 1.6 28 24 1.2 0.8 20 0.4 16 2 4 6 8 -50 10 0 50 100 150 200 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 20 16 T j =175 o C 12 Normalized VGS(th) (V) IS(A) 1.2 o T j =25 C 8 0.8 0.4 4 0 0.0 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP40U03GH 16 f=1.0MHz 1000 C iss 12 V DS =15V V DS =18V V DS =24V C (pF) VGS , Gate to Source Voltage (V) I D =12A 8 C oss C rss 100 4 10 0 0 4 8 12 16 1 20 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Normalized Thermal Response (Rthjc) Duty factor = 0.5 10 ID (A) 100us 1ms 10ms 100ms DC 1 o T C =25 C Single Pulse 0 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty Factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 0.00001 0.0001 Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) V DS ,Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 D D1 E2 MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 E3 E1 B1 F1 e Millimeters SYMBOLS F 2.20 2.63 3.05 F1 0.5 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 F e 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. R : 0.127~0.381 A2 A3 (0.1mm C Part Marking Information & Packing : TO-252 Part Package Code meet Rohs requirement 40U03GH LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence