VCES = 1200V
IC = 81A@ TC = 100°C
VCE(on) typ. = 1.47V@ 33A
G
C
E
Gate Collector Emitter
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
*Qualification standards can be found at http://www.irf.com/
E
C
G
n-channel
AUTOMOTIVE GRADE AUIRG4PH50S
Features
•Standard: Optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
•Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
•Industry standard TO-247AC package
•Lead-Free
•Automotive Qualified *
Benefits
•Generation 4 IGBT's offer highest efficiency available
•IGBT's optimized for specified application conditions
INSULATED GATE BIPOLAR TRANSISTOR
TO-247AC
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015
Form Quantity
AUIRG4PH50S TO-247AC Tube 25 AUIRG4PH50S
Standard Pack
Base part number Complete Part NumberPackage Type
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 1200 V
I
C
@ T
C
= 25°C Continuous Collector Current 141
g
I
C
@ T
C
= 100°C Continuous Collector Current 81
I
CM
Pulse Collector Current, V
GE
= 15V
d
99
I
LM
Clamped Inductive Load Current, V
GE
= 20V
c
99
V
GE
Continuous Gate-to-Emitter Voltage ±20
Transient Gate-to-Emitter Voltage ±30
P
D
@ T
C
= 25°C Maximum Power Dissipation 543
P
D
@ T
C
= 100°C Maximum Power Dissipation 217
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. (1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θ
JC
(IGBT) Thermal Resistance Junction-to-Case (IGBT)
f
––– ––– 0.23
R
θ
CS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
θ
JA
Thermal Resistance, Junction-to-Ambient ––– 40 –––
-55 to +150
V
W
°C/W
A
2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015
AUIRG4PH50S
Notes:
VCC = 80% (VCES), VGE = 20V, L = 400μH, RG = 50Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ of approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current limitations arising
from heating of the device leads may occur with some lead mounting arrangements.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 — — V V
GE
= 0V, I
C
= 250μA
e
ΔV
(BR)CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage — 1.2 — V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
e
— 1.47 1.7 I
C
= 33A, V
GE
= 15V, T
J
= 25°C
—1.55— I
C
= 33A, V
GE
= 15V, T
J
= 150°C
V
GE( th )
Gate Threshold Voltage 3.0 — 6.0 V V
CE
= V
GE
, I
C
= 250μA
ΔV
GE(th)
/ΔTJ Threshold Voltage temp. coefficient — -11 — mV/°C V
CE
= V
GE
, I
C
= 250μA (25°C - 150°C)
gfe Forward Transconductance — 30 — S V
CE
= 50V, I
C
= 33A, PW = 20μs
I
CES
Collector-to-Emitter Leakage Current — — 250 V
GE
= 0V, V
CE
= 1200V, T
J
= 25°C
— — 1000 V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge (turn-on) — 151 227 I
C
= 33A
Q
ge
Gate-to-Emitter Charge (turn-on) — 26 39 nC V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) — 62 93 V
CC
= 600V
I
C
= 33A, V
CC
= 600V, V
GE
= 15V
mJ R
G
= 5Ω, L = 400μH, T
J
= 25°C
Energy losses include tail
t
d(off)
Turn-Off delay time — 485 616 I
C
= 33A, V
CC
= 600V, V
GE
= 15V
t
f
Fall time — 1193 1371 R
G
= 5Ω, L = 400μH, T
J
= 25°C
I
C
= 33A, V
CC
= 600V, V
GE
= 15V
mJ R
G
= 5Ω, L = 400μH, T
J
= 150°C
Energy losses include tail
t
d(off)
Turn-Off delay time — 689 — I
C
= 33A, V
CC
= 600V, V
GE
= 15V
t
f
Fall time — 2462 — R
G
= 5Ω, L = 400μH, T
J
= 150°C
C
ies
Input Capacitance — 3804 — V
GE
= 0V
C
oes
Output Capacitance — 161 — V
CC
= 30V
C
res
Reverse Transfer Capacitance — 31 — f = 1.0Mhz
T
J
= 150°C, I
C
= 99A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
99S9
Rg = 5Ω, V
GE
= +20V to 0V
μA
V
pF
V
CE(on)
Collector-to-Emitter Saturation Voltage
ns
15
—
Conditions
ns
29
—
E
of f
Turn-Off Switching Loss
16
—
E
of f
Turn-Off Switching Loss
3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015
AUIRG4PH50S
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
 Highest passing voltage.
Qualification Information
†
Moisture Sensitivity Level TO-247AC N/A
Charged Device Model Class C4
AEC-Q101-005
Qualification Level
Automotive
(per AEC-Q101)
††
This part number(s) passed Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by extension of the higher Automotive
level.
RoHS Compliant Yes
ESD
Machine Model Class M3
AEC-Q101-002
Human Body Model Class H2
AEC-Q101-001
4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015
AUIRG4PH50S
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 5- Reverse Bias SOA
TJ = 150°C; VGE = 20V
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20μs
Fig. 4 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
25 50 75 100 125 150
TJ , Temperature (°C)
3.0
3.5
4.0
4.5
5.0
VGE(th),
Gate Threshold Voltage (Normalized)
IC = 1mA
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 150°C; VGE =15V
25 50 75 100 125 150
TC (°C)
0
20
40
60
80
100
120
140
160
IC (A)
25 50 75 100 125 150
TC (°C)
0
100
200
300
400
500
600
Ptot (W)
1 10 100 1000 10000
VCE (V)
0.01
0.1
1
10
100
1000
IC (A)
10μsec
100μsec
Tc = 25°C
Tj = 150°C
Single Pulse
DC
1msec
10 100 1000 10000
VCE (V)
1
10
100
1000
IC (A)
0246810
VCE (V)
0
20
40
60
80
100
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015
AUIRG4PH50S
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C Fig. 12- Typ. Transfer Characteristics
VCE = 50V; tp = 20μs
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 20μs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20μs
5 101520
VGE (V)
0
1
2
3
4
5
6
7
8
VCE (V)
ICE = 17A
ICE = 33A
ICE = 66A
5 101520
VGE (V)
0
1
2
3
4
5
6
7
8
VCE (V)
ICE = 17A
ICE = 33A
ICE = 66A
5 101520
VGE (V)
0
1
2
3
4
5
6
7
8
VCE (V)
ICE = 17A
ICE = 33A
ICE = 66A
0246810
VCE (V)
0
20
40
60
80
100
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
0246810
VCE (V)
0
20
40
60
80
100
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
4567891011
VGE (V)
0
20
40
60
80
100
ICE (A)
TJ = 25°C
TJ = 150°C
6 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015
AUIRG4PH50S
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 33A; L = 2.0mH
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 400μH; VCE = 600V, RG = 5Ω; VGE = 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 400μH; VCE = 600V, RG = 5Ω; VGE = 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 400μH; VCE = 600V, ICE = 33A; VGE = 15V
Fig. 16- Typ. Switching Time vs. RG
TJ = 150°C; L = 400μH; VCE = 600V, ICE = 33A; VGE = 15V
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
0 10203040506070
IC (A)
10
15
20
25
30
35
40
45
50
Energy (mJ)
EOFF
020 40 60 80
IC (A)
100
1000
10000
Swiching Time (ns)
tdOFF
tF
0 20406080100
Rg (Ω)
24
26
28
30
32
Energy (mJ)
E
OFF
020 40 60 80 100
RG (Ω)
100
1000
10000
Swiching Time (ns)
tdOFF
tF
0100 200 300 400 500 600
VCE (V)
1
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
0 20 40 60 80 100 120 140 160
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES
= 600V
VCES
= 400V
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AUIRG4PH50S
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z
thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.0011 0.000003
0.0518 0.000223
0.1300 0.001791
0.0472 0.008118
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4
8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015
AUIRG4PH50S
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - BVCES Filter Circuit
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.3
-10
0
10
20
30
40
50
60
70
-100
0
100
200
300
400
500
600
700
-2 0 2 4 6
I
CE
(A)
V
CE
(V)
time(μs)
90% I
CE
5% V
CE
10% I
CE
Eoff Loss
tf
0
1K
VCC
DUT
L
L
Rg
80 V
DUT VCC
+
-
G force
C sense
100K
DUT
0.0075μF
D1 22K
E force
C force
E sense
L
Rg
VCC
DUT /
DRIVER
diode clamp /
DUT
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AUIRG4PH50S
TO-247AC Package Outline
TO-247AC Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Dimensions are shown in milimeters (inches)
Lot Code
AUG4PH50S
YWWA
XX or XX
Part Number
IR Logo
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
10 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015
AUIRG4PH50S
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations
is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of
third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or
service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive
business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the
body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR
product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any
such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are
designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications.
Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring
military grade products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation
“AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
11 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015
AUIRG4PH50S
Date Comments
7/8/2014 • Updated datasheet based on new template and retest data.
•
•
Updated typo on switch time test condition from "25C" to "150C" on page 2.
• Corrected typo on V
(BR)CES
test condition from "100μA" to "250μA" on page 2.
• Corrected typo on V
GE( TH)
test condition from "1mA" to "250μA" on page 2.
3/2/2015 • Removed I
CES
= 2uA @ VCE = 10V on page 2.
Revision History
7/11/2014
1/9/2015