V
RRM
= 600 V - 1200 V
I
F(AV)
= 600 A
Features
• High Surge Capability Heavy Three Tower Package
• Types from 600 V to 1200 V V
RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Parameter Symbol MURTA60060(R) Unit
Repetitive peak reverse voltage V
RRM
600 V
RMS reverse voltage V
RMS
424 V
DC blocking voltage
V
600
V
MURTA60060 thru MURTA600120R
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
Silicon Super Fast
Recover
y
Diode
MURTA600120(R)
1200
---
1200
DC
blocking
voltage
V
DC
600
V
Operating temperature T
j
-55 to 150 °C
Storage temperature T
stg
-55 to 150 °C
Parameter Symbol MURTA60060(R) Unit
A
verage forward current (per pkg) I
F(AV)
600 A
Peak forward surge current (per leg) I
FSM
4400 A
Maximum instantaneous forward
voltage (per leg) 1.7
25 μA
5mA
Maximum reverse recovery time (per
leg) T
rr
280 ns
Thermal characteristics
Maximum thermal resistance, junction
-
case (per leg) R
ΘJC
0.28 °C/W
T
j
= 125 °C
I
FM
= 300 A, T
j
= 25 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
T
j
= 25 °C
V
0.28
1200
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions MURTA600120(R)
T
C
= 100 °C 600
t
p
= 8.3 ms, half sine 4400
V
F
2.6
Maximum instantaneous reverse
current at rated DC blocking voltage
(per leg)
I
R
25
5
280
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
1
MURTA60060(R) Figures:
MURTA60060 thru MURTA600120R
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
2
MURTA600120(R) Figures:
MURTA60060 thru MURTA600120R
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
3
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MURTA60060 thru MURTA600120R
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
4
