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VUM 85-05A
0627
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
MOSFET T 1
VGS(th) VDS = ±20 V, ID = 30 mA 2 3 4 V
IGSS VGS = ±20 V, VDS = 0 V ±1.5 µA
IDSS VDS = VDSS,V
GS = 0 V 0.5 1.4 mA
VDS = 0,8•VDSS,V
GS = 0 V, TVJ = 125°C17mA
RDS(on) ID = ½ ID25, VGS = 10 V, pulse test 36 mΩ
t ≤ 300 µs, d ≤ 2%
gfs VDS = 10 V, ID = ½ ID25, t = < 300 µs 75 145 S
td(on) 16 25 ns
tr33 45 ns
td(off) 65 80 ns
tf30 40 ns
Ciss 30 nF
Coss 3nF
Crss 1nF
Qg945 1120 nC
Qgs 195 280 nC
Qg435 595 nC
RthJC 0.09 K/W
RthCH 0.05 K/W
Single Phase Bridge Th1, D2, D3, D4
VF, VTIF, IT = 45 A, TVJ =25°C 1.50 V
TVJ =125°C 1.55 V
IRRM, IDRM VD, VR = VDRM, VRRM,T
VJ = 25°C 0.5 1.4 mA
VD, VR = 0,8•VDRM, VRRM,T
VJ = 125°C17mA
VT0 For power-loss calculations only 0.85 V
rTTVJ = 150°C14mΩ
VGT VD = 6 V 1.5 V
IGT 100 mA
VGD VD = 2/3 VDRM,T
VJ = 150°C 0.2 V
IGD 5mA
VRGM 10 V
IHVD = 6 V, RGK =
oo
200 mA
ILIG = 0.45 A, diG/dt = 0.45 A/µs, tp = 10 µs 450 mA
(di/dt)cr IG = 0.45A, diG/dt = 0.45A/µs, tp = 200µs, f = 50Hz
VD = 2/3VDRM, TVJ = 150°C, IT = 45 A, repetitive 150 A/µs
IG = 0.45A, diG/dt = 0.45A/µs, tp = 200µs, f = 50Hz
VD = 2/3VDRM, TVJ = 150°C, IT = IDAV, non-repetitive 500 A/µs
tgd IG = 0.45 A, diG/dt = 0.45 A/µs, VD = ½ VDRM 2µs
tqIT = 20 A, di/dt = -10 A/µs, VR = 100 V, VD = 2/3VDRM 150 µs
tp = 200 µs, dv/dt = 15 V/µs, TVJ = 150°C
PGM IT = Id(AV), TVJ = 150°Ct
p = 30 µs 10 W
tp = 300 µs 5 W
PGAVM 0,5 W
RthJC DC per diode / thyristor 1.3 K/W
RthCH DC per diode / thyristor 0.4 K/W
VDS = ½ VDSS, ID = ½ ID25, VGS = 15 V
RG = 1 Ω, L = 100 µH, TVJ = 125°C
VDS = 25 V, f = 1 MHz, VGS = 0 V
VDS = ½ VDSS, ID = ½ ID25, VGS = 15 V