Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -10
ID @ TA = 70°C Continuous Drain Current, VGS @ - 10V -7.1
IDM Pulsed Drain Current -45
PD @TA = 25°C Power Dissipation 2.5
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 370 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
IRF7416
PD - 9.1356E
VDSS = -30V
RDS(on) = 0.02Ω
HEXFET® Power MOSFET
SO-8
Top View
8
1
2
3
45
6
7
D
D
DG
S
A
D
S
S
lGeneration V Technology
lUltra Low On-Resistance
lP-Channel Mosfet
lSurface Mount
lAvailable in Tape & Reel
lDynamic dv/dt Rating
lFast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
Absolute Maximum Ratings
W
A
12/21/05
Thermal Resistance Ratings
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient 50 °C/W
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IRF7416
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage -1.0 V TJ = 25°C, IS = -5.6A, VGS = 0V
trr Reverse Recovery Time 56 85 ns TJ = 25°C, IF = -5.6A
Qrr Reverse RecoveryCharge 99 150 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
-45
-3.1
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient -0.024 V/°C Reference to 25°C, ID = -1mA
0.020 VGS = -10V, ID = -5.6A
0.035 VGS = -4.5V, ID = -2.8A
VGS(th) Gate Threshold Voltage -1.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 5.6 S VDS = -10V, ID = -2.8A
-1.0 VDS = -24V, VGS = 0V
-25 VDS = -24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage -100 VGS = -20V
Gate-to-Source Reverse Leakage 100 VGS = 20V
QgTotal Gate Charge 61 92 ID = -5.6A
Qgs Gate-to-Source Charge 8.0 12 nC VDS = -24V
Qgd Gate-to-Drain ("Miller") Charge 22 32 VGS = -10V, See Fig. 6 and 9
td(on) Turn-On Delay Time 18 VDD = -15V
trRise Time 49 ID = -5.6A
td(off) Turn-Off Delay Time 59 RG = 6.2Ω
tfFall Time 60 RD = 2.7Ω, See Fig. 10
Ciss Input Capacitance 1700 VGS = 0V
Coss Output Capacitance 890 pF VDS = -25V
Crss Reverse Transfer Capacitance 410 = 1.0MHz, See Fig. 5
Ω
µA
nA
ns
IGSS
IDSS Drain-to-Source Leakage Current
RDS(on) Static Drain-to-Source On-Resistance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ -5.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Starting TJ = 25°C, L = 25mH
RG = 25Ω, IAS = -5.6A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
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IRF7416
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
0.1 1 10
D
DS
20µs PULSE WIDTH
T = 25°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
1
10
100
0.1 1 10
D
DS
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
20µs PULSE WIDTH
T = 150°C
J
1
10
100
3.0 3.5 4.0 4.5 5.0 5.5
T = 25°C
T = 150°C
J
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -10V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
V = -10V
GS
I = -5.6A
D
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IRF7416
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
1000
2000
3000
4000
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 20406080100
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
V = -24V
V = -15V
DS
DS
FOR TEST CIRCUIT
SEE FIGURE 9
I = -5.6A
D
1
10
100
0.4 0.6 0.8 1.0 1.2
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-V , Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
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IRF7416
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
+
-
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
-10V
D.U.T. V
DS
I
D
I
G
-3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-10V
QG
QGS QGD
VG
Charge
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
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IRF7416
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(
BR
)
DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
25 50 75 100 125 150
0
200
400
600
800
1000
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
o
ID
TOP
BOTTOM
-2.5A
-4.5A
-5.6A
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IRF7416
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
*
VGS*
**
Peak Diode Recovery dv/dt Test Circuit
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 13. For P-Channel HEXFETS
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IRF7416
SO-8 Package Details
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BAS IC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BAS IC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MIL L IME T E R SINCHES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BAS IC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1
A
A1
8X b
C
0.10 [.004]
4312
F OOT P R I N T
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OU T L I NE CONF OR MS T O J E DE C OU T L I NE MS -012AA.
NOT E S :
1. DIMENS IONING & TOL ERANCING PE R AS ME Y14.5M-1994.
2. CONT ROL LING DIMENS ION: MILL IME T E R
3. DI ME N S I ONS AR E S HOWN I N MI L L I ME T E R S [ I NCHE S ].
5 DIMENS ION DOES NOT INCL UDE MOLD PROT RUS IONS .
6 DIMENS ION DOES NOT INCL UDE MOLD PROT RUS IONS .
MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A S UBS T RATE.
MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006].
8X 1.78 [.070]
DAT E CODE (YWW)
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7101
Y = LAST DIGIT OF THE YEAR
PART NUMBER
LOT CODE
WW = WE E K
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
P = DE S IGNAT E S L E AD- F R E E
PRODUCT (OPTIONAL)
A = ASSEMBLY SITE CODE
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IRF7416
SO8
Dimensions are shown in millimeters (inches)
Tape & Reel Information
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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