Document Number: 88627 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Oct-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
High Current Axial Plastic Rectifier
GI750 thru GI758
Vishay General Semiconductor
FEATURES
Low forward voltage drop
Low leakage current, IR less than 0.1 μA
High forward current capability
High forward surge capability
Solder dip 275 °C max. 10 s, per JESD 22-B106
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes application.
Note
These devices are not AEC-Q101 qualified.
MECHANICAL DATA
Case: P600, void-free molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 6.0 A
VRRM 50 V to 800 V
IFSM 400 A
VF0.9 V, 0.95 V
IR5.0 μA
TJ max. 150 °C
P600
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL GI750 GI751 GI752 GI754 GI756 GI758 UNIT
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 V
Maximum non-repetitive peak reverse voltage VRSM 60 120 240 480 720 1200 V
Maximum average
forward rectified
current at
TA = 60 °C, P.C.B. mounting (fig. 1)
IF(AV)
6.0
A
TL = 60 °C,0.125" (3.18 mm)
lead length (fig. 2) 22
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 400 A
Operating junction and storage temperature range TJ, TSTG - 50 to + 150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL GI750 GI751 GI752 GI754 GI756 GI758 UNIT
Maximum instantaneous
forward voltage at
6.0 A VF
0.90 0.95 V
100 A 1.25 1.30
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C IR
5.0 μA
TA = 100 °C 1.0 mA
Typical reverse recovery time IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 2.5 μs
Typical junction capacitance 4.0 V, 1 MHz CJ150 pF
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88627
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Oct-09
GI750 thru GI758
Vishay General Semiconductor
Note
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted with 1.1" x 1.1"
(30 mm x 30 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Forward Current Derating Curve
Fig. 3 - Maximum Peak Forward Surge Current
Fig. 4 - Typical Instantaneous Forward Characteristics
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL GI750 GI751 GI752 GI754 GI756 GI758 UNIT
Typical thermal resistance
RθJA (1) 20
°C/W
RθJL (1) 4.0
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
GI756-E3/54 2.1 54 800 13" diameter paper tape and reel
GI756-E3/73 2.1 73 300 Ammo pack packaging
0
1.0
5.0
4.0
3.0
2.0
6.0
7.0
040 60 8020 100 120 140 160 180 200
8.0
Average Forward Rectied Current (A)
Ambient Temperature (°C)
1.1" x 1.1" (30 mm x 30 mm)
Copper Pads
60 Hz Resistive
or Inductive Load
0
4
8
12
16
040 60 8020 100 120 140 160 180 200
20
24
28
Average Forward Current (A)
Lead Temperature (°C)
L = 0.125" (3.18 mm)
L = 0.25" (6.35 mm)
60 Hz Resistive
or Inductive Load
Both Leads Attached
to Heat Sinks with
Length as Shown “L”
L = 0.375" (9.5 mm)
L = 0.625" (15.8 mm)
110 100
10
100
1000
V
RRM
may be Applied Between
Each Cycle of Surge, the T
J
Noted is T
J
Prior to Surge
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= 150 °C
T
J
= 25 °C
Repetitive
Non-Repetitive
T
J
= 150 °C
T
J
= 25 °C
10
100
1
0.1
0.01
1.20.80.6 1.4 1.6 1.81.0
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
Document Number: 88627 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Oct-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
GI750 thru GI758
Vishay General Semiconductor
Fig. 5 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
1
10
100
0.01
0.1
200 10040 60 80
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
TJ = 125 °C
TJ = 25 °C
TJ = 100 °C
10
100
0.1
1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Mounted on
0.20" x 0.27" (5.0 mm x 7.0 mm)
Copper Pad Areas
0.052 (1.32)
0.048 (1.22)
0.360 (9.1)
0.340 (8.6)
DIA.
1.0 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
1.0 (25.4)
MIN.
P600
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Revision: 12-Mar-12 1Document Number: 91000
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