CPH6615-TL-E - ON SEMICONDUCTOR

CPH6615

No.8069-1/6

Features

•The CPH6615 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,

Ultrahigh-speed switching, thereby enabling high-density mounting.

•Excellent ON-resistance characteristic.

•Best suited for load switches.

•4V drive.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions N-channel P-channel Unit

Drain-to-Source Voltage VDSS 30 --30 V

Gate-to-Source Voltage VGSS ±20 ±20 V

Drain Current (DC) ID2.5 --1.8 A

Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 10 --7.2 A

Allowable Power Dissipation PD

Mounted on a ceramic board (900mm2✕0.8mm)1unit

0.9 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions min typ max Unit

[N-channel]

Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 30 V

Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0 1 µA

Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA

Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V

Forward T ransfer Admittance yfsVDS=10V, ID=1.5A 1.2 2.0 S

RDS(on)1 ID=1.5A, VGS=10V 79 105 mΩ

Static Drain-to-Source On-State Resistance

RDS(on)2 ID=1A, VGS=4V 150 210 mΩ

Input Capacitance Ciss VDS=10V, f=1MHz 187 pF

Output Capacitance Coss VDS=10V, f=1MHz 40 pF

Reverse T ransfer Capacitance Crss VDS=10V, f=1MHz 33 pF

Marking : WB Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN8069

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

D1004PE TS TB-00000653

CPH6615 N-Channel and P-Channel Silicon MOSFETs

General-Purpose Switching Device

Applications

CPH6615

No.8069-2/6

Continued from preceding page. Ratings

Parameter Symbol Conditions min typ max Unit

Turn-ON Delay Time td(on) See specified Test Circuit. 7.8 ns

Rise T ime trSee specified Test Circuit. 18.5 ns

Turn-OFF Delay Time td(off) See specified Test Circuit. 22 ns

Fall T ime tfSee specified Test Circuit. 12 ns

Total Gate Charge Qg VDS=10V, VGS=10V, ID=2.5A 5.2 nC

Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=2.5A 1 nC

Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=2.5A 0.97 nC

Diode Forward Voltage VSD IS=2.5A, VGS=0 0.9 1.2 V

[P-channel]

Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --30 V

Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0 --1 µA

Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA

Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V

Forward T ransfer Admittance yfsVDS=--10V, ID=--1A 1.1 1.8 S

RDS(on)1 ID=--1A, VGS=--10V 180 235 mΩ

Static Drain-to-Source On-State Resistance

RDS(on)2 ID=--0.5A, VGS=--4V 320 450 mΩ

Input Capacitance Ciss VDS=--10V, f=1MHz 226 pF

Output Capacitance Coss VDS=--10V, f=1MHz 43 pF

Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 36 pF

Turn-ON Delay Time td(on) See specified Test Circuit. 8.5 ns

Rise T ime trSee specified Test Circuit. 10.5 ns

Turn-OFF Delay Time td(off) See specified Test Circuit. 29 ns

Fall T ime tfSee specified Test Circuit. 22 ns

Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1.8A 5.5 nC

Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1.8A 1 nC

Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1.8A 0.97 nC

Diode Forward Voltage VSD IS=--1.8A, VGS=0 --0.91 --1.5 V

Package Dimensions Electrical Connection

unit : mm

2238

1 : Gate1

2 : Source2

3 : Gate2

4 : Drain2

5 : Source1

6 : Drain1

SANYO : CPH6

0.05

0.9

0.7 0.2 1.6 0.60.6

0.95

123

654

2.8

0.2

2.9 0.15

0.4

654

123

1 : Gate1

2 : Source2

3 : Gate2

4 : Drain2

5 : Source1

6 : Drain1

Top view

CPH6615

No.8069-3/6

Switching Time Test Circuit

[N-channel] [P-channel]

PW=10µs

D.C.≤1%

P.G 50Ω

ID=1.5A

RL=10Ω

VDD=15V

VOUT

VIN

10V

VIN

PW=10µs

D.C.≤1%

P.G 50Ω

ID= --1A

RL=15Ω

VDD= --15V

VOUT

VIN

--10V

VIN

[Nch]

ID -- VDS

IT07298

ID -- VGS

IT07300

2.5

0.8 0.9 1.00.1 0.2 0.3 0.4 0.5 0.6 0.7

0.5

1.0

1.5

2.0

3.0

0.5

1.0

2.0

2.5

1.5

VGS=2.5V

4.0V

6.0V

10.0V

3.0V

VDS=10V

Ta=25

--25

[Pch]

ID -- VDS

IT07299

ID -- VGS

IT07301

--1.8

--1.4

--1.2

--1.6

--0.8 --0.9 --1.0--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7

--0.2

--0.4

--0.6

--1.0

--0.8

VGS=

2.5V

4.0V

10.0V

3.0V

VDS=

10V

6.0V

--4.0--3.0--2.5 --3.5--0.5

--3.0

--1.0 --1.5 --2.04.03.02.5 3.50.5 1.0 1.5 2.0

--0.5

--1.0

--2.0

--2.5

--1.5

Ta=25

--25

Drain Current, ID -- A

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- A

Gate-to-Source Voltage, VGS -- V

Drain Current, ID -- A

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- A

Gate-to-Source Voltage, VGS -- V

CPH6615

No.8069-4/6

[Nch]

RDS(on) -- VGS

IT07302

RDS(on) -- Ta

IT07304

400

24 86 10121416 2018

--60 --40 --20 0 20 40 60 80 100 120 140 160

350

150

200

250

300

100

300

100

150

250

200

Ta=25°C

ID=1.0A

1.5A

[Pch]

RDS(on) -- VGS

IT07303

800

--2 --4 --8--6 --10 --12 --14 --16 --20--18

700

200

100

300

400

500

600

Ta=25°C

ID= --0.5A

--1.0

ID=

1.0

A, VGS=4V

ID=

1.5

A, VGS=10V

[Pch]

RDS(on) -- Ta

IT07305

--60 --40 --20 0 20 40 60 80 100 120 140 160

600

100

200

300

400

500

ID= --

0.5

A, VGS= --4V

ID= --

1.0

A, VGS= --10V

IT07308

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.21.1

0.01

0.1

1.0

IF -- VSD

IT07306



fs -- ID

0.10.01 57235723 1.0 23 75

1.0

0.1

1.0

0.1

Ta=75

--25°C

VGS=0

[Nch]

IT07309

--0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.2--1.1

--0.01

--0.1

--1.0

IF -- VSD

Ta=75

--25°C

VGS=0

[Pch]

VDS=10V

IT07307



fs -- ID

--0.1--0.01 5723 --1.0 2753

Ta= --25

75°C

[Pch]

VDS= --10V

75°C

Ta= --25

5723

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

Forward T ransfer Admittance, yfs -- S Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

Gate-to-Source Voltage, VGS -- V

Ambient Temperature, Ta --

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

Gate-to-Source Voltage, VGS -- V

Ambient Temperature, Ta --

Drain Current, ID -- A

Forward Current, IF -- A

Diode Forward Voltage, VSD -- V

Forward T ransfer Admittance, yfs -- S

Drain Current, ID -- A

Forward Current, IF -- A

Diode Forward Voltage, VSD -- V

CPH6615

No.8069-5/6

SW Time -- ID

IT07310

100

1.0

0.01 0.1

23 57 23 57 23 5

1.0 7

100

305 10152025

Ciss, Coss, Crss -- VDS

IT07312

f=1MHz

VDD=15V

VGS=10V

td(off)

td(on)

Ciss

Coss

Crss

[Nch]

SW Time -- ID

IT07311

100

1.0

--0.01 --0.1

2 3 57 2 3 57 2

--1.0 53

VDD= --15V

VGS= --10V

td(off)

td(on)

[Pch]

0 --30--5 --10 --15 --20 --25

Ciss, Coss, Crss -- VDS

IT07313

f=1MHz

Ciss

Coss

Crss

[Pch]

A S O

1.0

0.1

0.01 23 5 53723 572357

0.01 0.1 1.0 10 2

IT07316

VGS -- Qg

IT07314

12345 0 612345

<10µs

100µs

1ms

10ms

100ms

Operation in this area

is limited by RDS(on).

ID=2.5A

DC operation (Ta=25

°C)

IDP=10A

[Nch]

VDS=10V

ID=2.5A

A S O

--1.0

--10

--0.1

--0.01 23 5 53723 5723 57

--0.01 --0.1 --1.0 --10 2

IT07317

VGS -- Qg

IT07315

--1

--2

--3

--5

--4

--6

--7

--8

--9

--10

<10µs

100µs

1ms

10ms

100ms

Operation in this area

is limited by RDS(on).

ID= --1.8A

DC operation (Ta=25

°C)

IDP= --7.2A

[Pch]

VDS= --10V

ID= --1.8A

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- A

Total Gate Charge, Qg -- nC

Gate-to-Source Voltage, VGS -- V

Ta=25°C

Single pulse

Mounted on a ceramic board (900mm2✕0.8mm) 1unit

Switching Time, SW Time -- ns

Ciss, Coss, Crss -- pF

Drain Current, ID -- A

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- A

Total Gate Charge, Qg -- nC

Gate-to-Source Voltage, VGS -- V Switching Time, SW Time -- ns

Ciss, Coss, Crss -- pF

Drain Current, ID -- A

Drain-to-Source Voltage, VDS -- V

Ta=25°C

Single pulse

Mounted on a ceramic board (900mm2✕0.8mm) 1unit

Drain-to-Source Voltage, VDS -- V

CPH6615

No.8069-6/6

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer’s

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer’s products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be exported without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of December, 2004. Specifications and information herein are subject

to change without notice.

PD -- Ta

IT07318

020 40 60 80 100 120

0.8

0.9

1.0

140 160

0.6

0.4

0.2

[Nch / Pch]

Ambient Temperature, Ta -- °C

Allowable Power Dissipation, PD -- W

Mounted on a ceramic board (900mm

✕0.8mm) 1unit

Note on usage : Since the CPH6615 is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.