CPH6615 Ordering number : ENN8069 N-Channel and P-Channel Silicon MOSFETs CPH6615 General-Purpose Switching Device Applications Features * * * * The CPH6615 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, Ultrahigh-speed switching, thereby enabling high-density mounting. Excellent ON-resistance characteristic. Best suited for load switches. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 30 --30 V Gate-to-Source Voltage VGSS 20 20 V 2.5 --1.8 A 10 --7.2 Drain Current (DC) ID IDP PD Drain Current (Pulse) Allowable Power Dissipation PW10s, duty cycle1% Mounted on a ceramic board (900mm20.8mm)1unit A 0.9 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS VGS(off) yfs Forward Transfer Admittance ID=1mA, VGS=0 VDS=30V, VGS=0 30 VGS=16V, VDS=0 VDS=10V, ID=1mA 1.2 VDS=10V, ID=1.5A 1.2 V 1 A 10 A 2.6 V 2.0 S RDS(on)1 RDS(on)2 ID=1.5A, VGS=10V ID=1A, VGS=4V 79 105 m 150 210 m Input Capacitance Ciss VDS=10V, f=1MHz 187 pF Output Capacitance Coss VDS=10V, f=1MHz 40 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 33 pF Static Drain-to-Source On-State Resistance Marking : WB Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1004PE TS TB-00000653 No.8069-1/6 CPH6615 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 7.8 Rise Time tr td(off) See specified Test Circuit. 18.5 ns See specified Test Circuit. 22 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge ns See specified Test Circuit. 12 ns VDS=10V, VGS=10V, ID=2.5A 5.2 nC 1 nC 0.97 Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=10V, ID=2.5A VDS=10V, VGS=10V, ID=2.5A Diode Forward Voltage VSD IS=2.5A, VGS=0 0.9 nC 1.2 V --1 A 10 A [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 VDS=--30V, VGS=0 Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGS=16V, VDS=0 yfs RDS(on)1 VDS=--10V, ID=--1A Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance RDS(on)2 Ciss --30 VDS=--10V, ID=--1mA V --1.2 --2.6 1.1 1.8 ID=--1A, VGS=--10V ID=--0.5A, VGS=--4V V S 180 235 m 320 450 m pF Coss VDS=--10V, f=1MHz VDS=--10V, f=1MHz 226 Output Capacitance 43 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 36 pF Turn-ON Delay Time td(on) See specified Test Circuit. 8.5 ns Rise Time tr td(off) See specified Test Circuit. 10.5 ns See specified Test Circuit. 29 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit. 22 ns VDS=--10V, VGS=--10V, ID=--1.8A 5.5 nC 1 nC 0.97 Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=--10V, VGS=--10V, ID=--1.8A VDS=--10V, VGS=--10V, ID=--1.8A Diode Forward Voltage VSD IS=--1.8A, VGS=0 0.15 2.9 5 6 5 4 1 2 3 4 0.6 6 3 0.95 0.7 0.9 2 0.2 2.8 0.6 1.6 0.05 1 0.4 nC --1.5 V Electrical Connection 0.2 Package Dimensions unit : mm 2238 --0.91 1 : Gate1 2 : Source2 3 : Gate2 4 : Drain2 5 : Source1 6 : Drain1 Top view 1 : Gate1 2 : Source2 3 : Gate2 4 : Drain2 5 : Source1 6 : Drain1 SANYO : CPH6 No.8069-2/6 CPH6615 Switching Time Test Circuit [N-channel] [P-channel] VIN VIN VDD=15V 10V 0V VDD= --15V 0V --10V ID=1.5A RL=10 VIN D D VOUT PW=10s D.C.1% G --10 --1.4 1.5 3.0V 1.0 .0V [Pch] --4 .0V V --1.6 Drain Current, ID -- A --1.2 --1.0 --0.8 --3.0V --0.6 --0.4 0.5 VGS=2.5V VGS= --2.5V --0.2 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V IT07298 ID -- VGS [Nch] 3.0 0 1.0 --0.1 --0.2 --0.3 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 IT07299 ID -- VGS [Pch] --3.0 VDS=10V --0.4 Drain-to-Source Voltage, VDS -- V VDS= --10V --2.5 1.5 --1.5 --1.0 C Ta= 2 0.5 --25 Ta= 2 5C 75 C 1.0 --2.0 --0.5 0 75 C C 2.0 5C Drain Current, ID -- A 2.5 --25 Drain Current, ID -- A ID -- VDS --1.8 4.0 10.0V 6.0V [Nch] S 0V ID -- VDS 2.0 Drain Current, ID -- A 50 P.G S --6 . 50 2.5 VOUT PW=10s D.C.1% G P.G ID= --1A RL=15 VIN 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Gate-to-Source Voltage, VGS -- V 3.5 4.0 IT07300 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V --3.5 --4.0 IT07301 No.8069-3/6 CPH6615 RDS(on) -- VGS 400 RDS(on) -- VGS [Nch] 800 [Pch] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 350 300 250 ID=1.0A 150 100 50 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V 300 --1.0A ID= --0.5A 200 100 =4V A, V GS 0V , V GS=1 100 I D=1.5A 50 0 --60 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C yfs -- ID 7 2 C 25 1.0 C 5 -2 =- 7 Ta 5 75 C 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 0.5A, I D= -- --14 --16 --18 --20 IT07303 [Pch] --4V V GS= 300 0V , V S= --1 I D= --1.0A G 200 100 --40 --20 0 20 40 60 80 100 yfs -- ID 7 120 140 160 IT07305 [Pch] VDS= --10V 5 3 2 C 25 C -25 =a T C 75 1.0 7 5 3 2 0.1 --0.01 7 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A [Nch] 3 5 7 IT07307 IF -- VSD 5 [Pch] VGS=0 3 2 Forward Current, IF -- A 2 5C 25 C --25 C 1.0 7 5 Ta= 7 3 2 0.1 7 5 --1.0 7 5 3 2 --0.1 7 5 3 3 2 2 0.01 0.4 --12 Ambient Temperature, Ta -- C VGS=0 3 --10 400 IT07306 IF -- VSD 5 --8 RDS(on) -- Ta IT07304 3 --6 500 0 --60 160 [Nch] VDS=10V 5 --4 600 Static Drain-to-Source On-State Resistance, RDS(on) -- m 200 .0 I D=1 --2 Gate-to-Source Voltage, VGS -- V [Nch] 250 150 0 IT07302 RDS(on) -- Ta 300 Static Drain-to-Source On-State Resistance, RDS(on) -- m 400 20 Forward Transfer Admittance, yfs -- S 0 Forward Transfer Admittance, yfs -- S 500 0 0 Forward Current, IF -- A 600 0.5 0.6 0.7 0.8 0.9 1.0 Diode Forward Voltage, VSD -- V 1.1 1.2 IT07308 5C 25 C --25 C 200 1.5A 700 Ta= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C --0.01 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 Diode Forward Voltage, VSD -- V --1.2 IT07309 No.8069-4/6 CPH6615 SW Time -- ID 3 [Nch] VDD=15V VGS=10V 100 7 5 td(off) 3 2 tf td(on) 10 7 5 tr 3 [Pch] VDD= --15V VGS= --10V 3 2 Switching Time, SW Time -- ns Switching Time, SW Time -- ns 2 SW Time -- ID 5 100 7 5 td(off) tf 3 2 td(on) 10 7 5 tr 3 2 2 1.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 1.0 --0.01 7 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A IT07310 Ciss, Coss, Crss -- VDS 5 5 Ciss, Coss, Crss -- VDS [Nch] 5 f=1MHz 3 5 IT07311 [Pch] f=1MHz 3 3 Ciss Ciss 2 Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 2 100 7 5 Coss 3 100 7 5 Coss 3 Crss Crss 2 2 10 10 5 0 10 15 20 25 Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V 7 6 5 4 3 2 1 2 3 4 5 [Pch] VDS= --10V ID= --1.8A --7 --6 --5 --4 --3 --2 [Nch] IDP=10A ID=2.5A 1.0 7 5 op s ati on (T a= 25 C Operation in this area is limited by RDS(on). 0.1 7 5 s 0m er 3 2 --10 7 5 m 10 ) Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 1 2 5 7 10 Drain-to-Source Voltage, VDS -- V 3 2 3 5 IT07316 4 [Pch] <10s 1m 100 s s 10 m 10 s 0m s ID= --1.8A D C op er at io Operation in this area is limited by RDS(on). --0.1 7 5 6 ASO IDP= --7.2A 3 2 5 IT07315 --1.0 7 5 3 2 2 3 Total Gate Charge, Qg -- nC 2 <10s 10 1m 0s s 10 DC 0 IT07314 ASO 2 Drain Current, ID -- A --30 IT07313 --8 6 Drain Current, ID -- A 1 Total Gate Charge, Qg -- nC 3 2 --25 0 0 3 2 --20 --1 0 10 7 5 --15 VGS -- Qg --10 --9 8 --10 Drain-to-Source Voltage, VDS -- V [Nch] VDS=10V ID=2.5A 9 --5 IT07312 VGS -- Qg 10 0 30 n (T a= 25 C ) Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 1unit --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT07317 No.8069-5/6 CPH6615 PD -- Ta Allowable Power Dissipation, PD -- W 1.0 [Nch / Pch] 0.9 M ou 0.8 nte do na ce ram 0.6 ic bo ard (9 00 mm 0.4 2 0 .8m m) 0.2 1u nit 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT07318 Note on usage : Since the CPH6615 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2004. Specifications and information herein are subject to change without notice. PS No.8069-6/6