APT8043HLL 800V 16A 0.430 POWER MOS 7 R MOSFET (R) TO-258 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID D * Increased Power Dissipation * Easier To Drive * Hermetic TO-258 Package * Military Screening Available G S All Ratings: TC = 25C unless otherwise specified. Parameter Drain-Source Voltage APT8043HLL UNIT 800 Volts 16 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 250 Watts Linear Derating Factor 2.0 W/C VGSM PD TJ,TSTG 64 Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS -55 to 150 Operating and Storage Junction Temperature Range TL 1 C 300 16 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts Amps 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 800 Volts 16 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) TYP MAX 0.43 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 500 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) Ohms A 100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 050-7324 Rev - 7-2002 Symbol DYNAMIC CHARACTERISTICS Symbol APT8043 HLL Characteristic MIN Test Conditions TYP MAX Ciss Input Capacitance VGS = 0V 2500 3000 Coss Output Capacitance VDS = 25V 486 730 Crss Reverse Transfer Capacitance f = 1 MHz 80 120 Qg Total Gate Charge VGS = 10V 86 130 Q gs Gate-Source Charge 3 Q gd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr VDD = 0.5 VDSS 13 16 ID = ID[Cont.] @ 25C 53 80 VGS = 15V 9 18 VDD = 0.5 VDSS 5 10 ID = ID[Cont.] @ 25C 25 38 RG = 1.6 5 10 TYP MAX Rise Time td(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS MIN Characteristic / Test Conditions 16 Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 V SD Diode Forward Voltage 2 (Body Diode) 64 (VGS = 0V, IS = -ID[Cont.]) 1.3 UNIT Amps Volts t rr Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) 680 ns Q Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) 10.6 C dv / rr Peak Diode Recovery dt dv/ dt 5 10 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case RJA Junction to Ambient TYP 0.50 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 10.16mH, R = 25, Peak I = 16A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR VDSS TJ 150C [ ] APT Reserves the right to change, without notice, the specifications and information contained herein. 0.50 0.05 0.2 0.1 0.05 0.01 0.005 0.02 Note: 0.01 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7324 Rev - 7-2002 D=0.5 0.1 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 C/W 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 10 Typical Performance Curves APT8043 HLL Graph Deleted ID, DRAIN CURRENT (AMPERES) 50 VGS =15 &10 V 40 8V 7.5V 30 7V 20 6.5V 10 6V 5.5V FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS 80 VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 60 50 40 30 20 TJ = +125C 10 TJ = +25C TJ = -55C 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 14 12 10 8 6 4 2 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 I D = 0.5 I V GS D GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.30 1.20 VGS=10V 1.10 VGS=20V 1.00 0.90 0.80 0 5 10 15 20 25 30 35 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 [Cont.] = 10V 2.0 1.5 1.0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) V 1.15 16 0.0 -50 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7324 Rev - 7-2002 ID, DRAIN CURRENT (AMPERES) 70 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 APT8043 HLL 5,000 OPERATION HERE LIMITED BY RDS (ON) Ciss C, CAPACITANCE (pF) 100S 10 1mS 1 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10,000 TC =+25C TJ =+150C SINGLE PULSE 16 I = I [Cont.] D 12 VDS=100V VDS=250V 8 VDS=400V 4 0 Coss 500 Crss 100 10 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA D 1,000 10mS IDR, REVERSE DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 64 0 20 40 60 80 100 120 140 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 200 100 TJ =+150C TJ =+25C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE TO-258 Package Outline 17.65 (.695) 17.39 (.685) 1.14 (.045) 0.88 (.035) 8.89 (.350) 8.63 (.340) 4.19 (.165) 3.94 (.155) 21.21 (.835) 20.70 (.815) 17.96 (.707) 17.70 (.697) 13.84 (.545) 13.58 (.535) Drain 19.05 (0.750) 12.70 (0.500) Source 050-7324 Rev - 7-2002 Gate 1.65 (.065) Dia. Typ. 1.39 (.055) 3 Leads 3.56 (.140) BSC 6.86 (.270) 6.09 (.240) 5.08 (.200) BSC Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058