ALLEGRO MICROSYSTEMS INC BE D MM 0504338 0006526 240 MMALGR ELECTRICAL CHARACTERISTICS at T, = + 25C I, Vier) Ve I, t. ci! Device Allegro Max. Min. | Max. @J, | Max. | Max. | Max. Type Type Description (mA) (V) (V) (mA) | (NA) | (ns) | (pF) | Geometry 1N3600 THD3600 General Purpose | 600 75 0.62 1.0 100 4.0 2.5 TSS 1N4001 THD4001 Rectifier 1000 50 14 1000 10k _ _ TRJ 1N4002 THOD4002 Rectifier 1000 100 1.1 1000 10k _ _ TRJ 1N4003 THD4003 Rectifier 1000 ; 200 1.1 1000 10k _ _ TRJ 1N4004 THD4004 Rectifier 1000 | 400 1.1 1000 | 10k _ _ TRL 1N4148 THD4148 General Purpose | 600 100 1.0 10 25 4.0 4.0 TSB 1N4149 THD4149 General Purpose | 600 100 1.0 10 25 4.0 2.0 TSB 1N4150 THD4150 General Purpose | 600 75 0.62 10@ 100 4.0 25 TSS 1N4151 THD4151 General Purpose | 600 75 1.0 50 50 4.0 4.0 TSB 1N4153 THD4153 General Purpose ; 600 75 0.67 1.0% 50 4.0 4.0 TSB 1N4376 THD4376 High Speed 500 20 1.1 50 100 1.0 1.0 TSP 1N4448 THD4448 General Purpose | 500 100 1.0 100 25 4.0 4.0 TSC 1N4454 THD4454 General Purpose | 600 75 1.0 10 100 4.0 2.0 TSB 1N4610 THD4610 General Purpose | 600 80 0.62 8 1.0% 100 4.0 2.0 TSU _ THBGO1 Schottky 3000 50 0.55 1000 | 500 | 460 BG THD480 Non P 600 60 0.7 10 100 4.0 10 TTU NOTES: 1. Maximum at typical JEDEC conditions. 3. V,=1.1 V atl, = 300 mA. 2. V_- 1.0 Vat I, = 200 mA. 4. |,= pA at V, = 40 V. 5. Standard Max. ratings do not apply. ALL PADS 0.004 in sq THD22Q High-speed diode array provides four diodes to 1N914/1N4148 specifications. Dielectric isolation virtually eliminates leakage between diodes or to substrate. Geometry KKA. 13