=e seas.-7ox7, =e Fuji New Semiconductor Products HAO; 600V / 75A/ 7 {848 si 1GBT-IPM (NYU-2) 7MBP75NA060-01 nil m@# & Features SID RADTY FLTC RIT + 3 ~~ FILER ha SHett * Low switching-surge and noise + Low power loss +k igh reliability Mew cote Maximum ratings and characteristics @4oHRMAZKH Absolute maximum ratings (at Tc=25T unless otherwise specified) Hen Symbol Aating Unit __ Min. Max. _# Sk Voc 0 450 v Tec BARE (H-) Vbc (SURGE) 0 500 Vv _S RAE ( Gstas) Vsc 200 400 Vv oe 3779 -Tiy ewSE VcES 0 660 Vv , | acoxem [pc Ic ~ 75 A O/ orsmurpeazny N ims cp = 150 A Vv Duiy=61.7% |{ Ic - 75 A ILOSRRK 1#F Pc - 320 Ww PR ma 5| 267s8iR Toc. Ic ; 50 A B | ims Icp = 100 A w t44 KISH Ir - 50 A (ay __ [| SLIswe RF Pc = 198 | W S83 Bue RE Tj - 150 -C . Ht HERS Vee *y 6 20 Vv Bt 7 ABBE RE RR hee Vin #2 , Ve Vv Measurement of case temperature TBR Jin - 1 mA 7- LH ANAM St VaLM * 2 0 Vee V F 3-LED a IALM + 4 15 mA - PRE Tstg 40 125 Sy ERE A IBIE [+ eRe Top | 20 100 Cc "Bi RIE (7 2 eR) Viso *5 | ' AC2.5 KO Note P.3 7H 7RIBH Refer to block diagram, page 3. #4 Voc. SO) 6-4, GA. 9-40 BET EIC HERR LF Aus, *2 Vinlk, 2-O. @-@. OH. de 03 14 15-40 MF RUC HHL TF au, . #3 Vault, 06-10 KERIB L TF eu, 2 Vin shall be applied to the input vollage between terminal No, (2 #4 lamit, OWFLUADLTF AW, and 3}, 6) and 43, @i and @:, 2) 93 4 49 and i. *5 SOHZ60HZ FR 1988 * 3 Vacm shall be apphed to the voltage between lerminal No. 46 and 4. * 4 latm Shall be applied to the input current to terminal No. 16). * 5 50H2/60Hz sine wave 1 minute. * Vcc shall be applied to the input voltage between terminal No, (3) and), (and 4), and <7), 40 and 40. * Ls @ RMN WIBB Electrical characteristics of power circuit (at Te=Tj=25C , Vec=15V) Iter) Symbol Condition Min. Typ. Max. Unit {| ALV7S-Tiv SHR ER Ices Vce=600V = _ 1.0 mA N | 3Sb9R + Tis SME VCE (sath Ic=75A _ 7 2.9 Vv V | #f4- FRE VF lc=75A - - 3.0 V p 27a 8 y oe Se Ices VceE=600V - - 1.0 mA B IL-9s-Tiy Sie VCE (sar) Ic=50A _ - 2.9 V S44 FIBSE VF Ic=50A - oa 3.3 V 96 No.5 Me 2238792 OOOS740 bSb 97MBP75NA060-01 Bt IGBT-IPM @ SH384/ HH Electrical characteristics of control circuit (at Te=Tj=25C , Vec=15V) item Symbol Condition Min. Typ. Max. Unit P+? KOR ARG A (1 Big) Iccr fswa15kHz *6 Duty=50% = 7 17 mA N+ KER Ae lecn fsw=15kHz - 25 65 mA (3 (LER SP SHIRE + FL * 88) Duty=50% ADL AUER Vin ton) ON 4.00 1.95 1.70 | V Vin (OFF) OFF 1.25 1.60 1.95 Yut-Se Vz 6.9 ~ 77 | GRRE be FLAS Ton Vocs0V, lo=0A 100 = 125 c Case temperature EATUYR TH _ 20 - Cc AB TRE by PL UL INV loc Tj=t25C Collector current $8 7 = A DB loc Tj=125'C Collectorcurrent 60 _ = A AS EME she] Gl 2 BRR toc Tja25'C = 8 = KS AH SE FRE NIL VuvtT 11.0 12.0 125 |v KAFUDR Vu ; 0.2 - - Vv PF RM fal taLM 08 2 - mS 38 MRE NR G3 Bae tee _ = 12.3 | pS PI LRA Ram 1425 1500 =| 1575 o * 6 Switching frequency of IPM @ 74+2 745M Dynamic characteristics (at Tc=Tj=125C, Vec=15V) Item Symbel Condition Min. Typ. Max. Unit Ado Ft. Tile Hd ee ton Ic=75A, Voce300V 03 _ - nS toff _ 3.6 BS Ady Fu Thalia] (FWD) tr r=75A, Voc=300V - - 400 ns INPUT Signal a Af y > FARR (ton, tcl) OLR | edu Definition of switching time : wt ton, toll "DGC : : : <> 2 (AFR (doc) OK . Definition of OC delay time ee {86 > HAS ose ee fen fal (tse) DER Alarm snable Definition of tse @ #4914 Thermal characteristics (Tc=25C) Item Symbol Typ Max. Unit we 7 ZAISURIA INV IGBT Rth (j-c) _ 0.39 C/W FWD Ah (j-c) - 0.99 CW oe IGBT Rth (j-c} - 0.63 CW AR D4 PRIN tb) Rth (c-f} 0.05 - CAV @ #8344 Mechanical characteristics @ #3218 Recommendable value ltem Typ. | Max. | Unit ttem Symbol! Min. | Typ. | Max. | Unit MOM hL7 | BA BB(MS) = 3.5| N:m aeeE Voc 200 | 400 |TV Screw torque | =S#F SIMS); 3.5] Nem GD TE EL Voc 13.5} 15 16.5] V WE Mass 550 - |g IPM Aft vp FU OR tsw 1 = 20 | kHz SEAR BJ BE A 70 SI) tin (sc) 12.3, {ps ROTI bE | ARfFaB(MS) | 25, 3.5| N-m Screw lorque | 23m EB(MS)| 25 - 3.5} Nem Mm 2298752 0005741 512= 1IGBT-IPM 7MBP75NA060-01 BvAy 7] Block diagram . Mm fSttthte (tHe hi) Characteristics (Representative) ve wu P @ HIGIBE = Control circuit Vil Pre-Driver 30 Tc=100 GNU u 5 : Vov < E 25 Vinv Pre-Oriver b = 20 GNIDY v Ver W 515 U VirW Pre-Oriver a a 210 GNW Ww 3 Vee 5 peressetberevares z 5 Vix Pre-Oriver a GD 0 : : 0 5 10 1s 20 25 Switching frequency : fsw{kHz} i Viny Pre-Dri * oo: " _ BwEH AT FL ARE Power supply curren vs. Switching frequency Vind Pre-Oriver Te25b B 25 core Tal 25T awd S Vine Pre-Driver a Temperature sensor 3 rE 3 Vin(OFF) Raw Over heating protec- Ai D> AM ton cweuit s $ 8 . 5 SRI FiCOMAES SC. ga D RES g 2 eS BIS 3 D Ale BREET Ra = 2a Rae eas 0 12 13 14 15 16 7 18 : Pre-drivers include following functions power supply voltage : Vcc (V) \. D Short cirevit protection circuit ADL Xvi SEE RBE BH @ Amplitier tor driver 3) Under voltage lockout circuit Over current protection circuit Input signal threshold voltage vs. Power supply voltage = $ ~ > yv > Bo pee ae Cc = . 1 : : Deere eeertreetete es tne ae poe | ; oe Pepe 20 40 60 80 100 120 140 Junction temperature : Tj (TC) fe RTE PRR IL 8 a EE Under voltage vs. Junction temperature Mm 2238792 OOOS?4e 4259 Me RR REE7MBP75NA060-01 S&S + IGBT-IPM B28 Control circuit @ tv s\ 488 Inverter Tj=25C pes vecdees cet eees tna aaa (Meca17V 1SV IBV os cane 200, 175 = 0.8 -----~- z wom of. 2 _ a ~~ A ~ 06 fof cue o4b a Collector current ~ @ wi OQ Under vollage hysterisis : VH(V) Qo th i t nN wn in > Qo 1 4 jos at 4 20 40 60 8 100 120 140 6 1 z 3 4 5 Junction temperature : Tj (C)} Collecter-Eritter voltage : Vce {V) BERFEAF UY AES MEE ILIOSBR-ILIA+ Li y SBE Under voltage hysterisis vs. Junction temperature Collector curremt vs. Collector-Emitier valiage Tj=125 200 /- } a 175 - + too Bes ~ cescvaeeseseenateaye cenarsaiecesveesurats soeeeeee WECET?V 1SV BV wo we 2 L is0 = =z 2 . Z ~ 28 z 12 ; ~ : : 5 100 gts : wee g = * an 5 75 31 - : oo oo 3 : a ul : we 3 50 Eos : i : : 8 < ee ; 25 pe oo 12 V3 14 15 16 W7 18 Power supply voltage : Vcc(V) Collector-Emitter voltage : Vce (V) PI ADRS Bee St IL 7SSR-AVL IS + Li y Swett Alarm hold lime vs Power supply voltage Collector current vs. Collector-Emitter voltage . Edcx300V Voce 1SViTe25e Oo a 1000 Poo Over heating protection ; TOH (C) TH OH hystersis : TH (T) oo) Qo Swirching time : ton,toff.tf (nsec) 12 1B 14 15 16 7 18 0 2 40 60 8G 100 120 140 Power supply voltage : Vcc (V) Collector current : ic (A) ARR KU PENILE RBI Atv - FREI 2 Bt Over heating characteristics TOH,TH, vs. Vcc Switching time vs. Collector current M@ 2238792 0005743 3645 aet IGBT-IPM 7MBP75NA060-01 Ede=300V,Vcc=15V,Tj=1250 { LtOff oan > $ oc carerseancaefeeeen tOF _ = i , 8 1000 3 + a s < & : . ' u _~ c t ! 5 - nn ae 3 s i = t 1 : 5 E : 100 om 5 G : of : iz vneee ond i - ae Lene 0.01 0 20 40 60 90 100 120 140 0.001 0.01 0.1 1 Collector current ~ Ie (A) Pulse width :Pw (sec) Ady F-FBM AL 2 2 Bt ARIE AS tt Switching time vs. Collector current Transient thermal resistance 750 Vec=15V,Tj=125T 675 = 600 < wes + 450 a 375 3 ~ 300 8 Beas 8150 I %0 6.5 1.0 1S 2.0 2.5 3.0 3.5 4.0 % 100 200 300 400 500 60a 700 Forward voltage : VF (V) Collector-Emitter voltage : Vce (V) NESS ik NSE FE WIN PARLE PURIST Forward current vs. Forward vaitage Reversed biased safe operating area poy percep w tr 125% TOO Fes = OT Pg tlrr (A) : tre (nsec) ho un oS Na Qo So = in o _ Qo oO Reverse recovery current Reverse recaverv time on oO Coltecter Power Oissipatian : Pc (W) 1 | . Loa . 6 thn o 2000 40 60 BO 100120140 0 20 40 60 80 i090 120 140 160 Forward current : IF (A) Case Temperature : Tc (C) i tI GE tt IGBT SA Gwate Reverse recovery characteristics trr, (rr vs. IF Power celating for IGBT (per device) me 2238792 0005744 etl7MBP75NA060-01 sie {A} Collector current Cotlecter Power Dissipation : Pe (W) Switching Loss ; Eon, Eoff.err (m3/eycle) Oe ; : cnn beers 6 20 40 60 80 6-100 12014060 Case Temperature . fc (C) FWD a ate Power delating for FWD (per device} 10 Ede=300V.Vec=15V,Tj-25T 6 berterernim sevens oe MRSS tn seman seen 4 . . Cae eee 2b er o J Q 20 * 40 60 80 100 120 Collector Current : ic (A) AVF FBR Ib 7 BSR Switching joss vs. Collector current @7--*+28 Brake vocal VIEW IBV i { i 0 1 3 4 $ Coflector-Emitter vaitage , Vce (V) ALVOSBR-IVI2- Tiv ghee Collector current vs. Gollecior-Emitter voltage loc {A} Over Current Protection Level : ic (A) Collector current : ~ Qo n oo : Eon, Eoff,Err (mJ /cycte) Switching Loss nD 280 240 2+ IGBT-IPM Ede=300V,Vec=1 5V,Ti=125T 40 60 BO Collector Current : Ie (A) Atv - FBR-IL 7 oa Switching loss vs. Collector current 100 120 Vec=15V | 120 ade BO ! 40 : 9 i 9 20 40 60 80 100 120 140 Junction temperature : Tj (C) WS AR AR- ES Aba SE Over current protection vs. Junction temperature Tj=125C 120 - ro mT 7 SVT SV IBV 100 : Lf | 86 60 ermal 40 20 4 Collector-Emitter voltage : Vce (V) ALTSBR-IL IA + Liv SBE Collector currant vs. Collector-Emitter voltage MH 2234792 OOOS74S 138 me= + IGBT-IPM Thar nl canintnnnn + Dehdi ad OM ANN Coilecter Power Dissination : Pe (W) 0.04 '-- 0.00 1 0.1 Pulse width :Pw {sec) HR BUR AE Transient thermal resistance 6.01 i 0 20 40 60 80 100 61200 140160 Case Temperature < Tc (TC) IGBT 3 71k ttt Power delating for IGBT (per device) Mi Yiiest:& Outline drawings, mm : __ ie9r) i 95403 13.840. a OIA ee oe Set) OM le we wn Q Collector current; 200 180 160 140 120 2 oO 60 4a Over Current Protection Level : loc (A) ya Ld EC +E] 7MBP75NA060-01 Vec=15V,Tj3125T 1b0 2co 399 400 500 600 700 Collector-Emitter vaitage : Vce (V) WING FARS ah eae att Reversed biased safe operating area 80 i 20 --~ Vec=15V T i | 60 80 100 320 Junction temperature : Tj () 12S 1S S Abi Stk Over current protection vs. Junction temperature Mm 2238792 OOOST4b OFF