BFS483 Low Noise Silicon Bipolar RF Transistor * For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 2 mA to 30 mA * fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 2 3 * Two (galvanic) internal isolated Transistor in one package * For orientation in reel see package information below * Pb-free (RoHS compliant) and halogen-free package with visible leads * Qualification report according to AEC-Q101 available C1 E2 B2 6 5 4 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS483 Marking RHs 1=B Pin Configuration 2=E 3=C 1 4=B 5=E Package 6=C SOT363 2013-07-25 BFS483 Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 65 Base current IB 5 Total power dissipation1) Ptot 450 mW Junction temperature TJ 150 C Ambient temperature TA -65 ... 150 Storage temperature TStg -65 ... 150 V mA TS 40 C Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS Value Unit 245 K/W Values Unit Electrical Characteristics at T A = 25 C, unless otherwise specified Symbol Parameter min. typ. max. 12 - - V ICES - - 100 A ICBO - - 100 nA IEBO - - 1 A hFE 70 100 140 DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 15 mA, VCE = 8 V, pulse measured 1T S is measured on the collector lead at the soldering point to the pcb 2For the definition of R thJS please refer to Application Note AN077 (Thermal 2 Resistance Calculation) 2013-07-25 BFS483 Electrical Characteristics at TA = 25 C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. fT 6 8 - Ccb - 0.34 0.54 Cce - 0.13 - Ceb - 1.1 - AC Characteristics (verified by random sampling) Transition frequency GHz IC = 25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure dB NFmin IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 0.9 - - 1.4 - Gms - 19 - dB Gma - 12.5 - dB IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum stable1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available2) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz |S21e|2 Transducer gain dB IC = 15 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz - 15.5 - IC = 15 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 MHz - 10 - 1G ms = |S21 / S12| 1/2 ma = |S21e / S12e | (k-(k-1) ) 2G 3 2013-07-25 BFS483 Total power dissipation P tot = (TS) Permissible Pulse Load RthJS = (tp) 10 3 500 mW 400 K/W RthJS Ptot 350 300 10 2 250 0.5 0.2 0. 1 0.05 0.2 0.1 0.005 D=0 200 150 100 50 0 0 20 40 60 80 100 120 C 10 1 -7 10 150 TS 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp Permissible Pulse Load Ptotmax/PtotDC = (tp ) P totmax/PtotDC 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2013-07-25 0 Package SOT363 5 BFS483 2013-07-25 BFS483 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. 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