BFP460 E6433 - Infineon Technologies

2010-05-17

BFP460

NPN Silicon RF Transistor

• General purpose low noise amplifier

for low voltage, low current applications

• High ESD robustness, typical 1500V (HBM)

• Low minimum noise figure 1.1 dB at 1.8 GHz

• High linearity: output compression point

OP1dB = 13 dBm @ 3V, 35mA, 1.8GHz

• Easy to use standard package with visible leads

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFP460 ABs 1 = E 2 = C 3 = E 4=B - - SOT343

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage

TA > 0 °C

≤ 0 °C

VCEO

4.5

4.2

Collector-emitter voltage VCES 15

Collector-base voltage VCBO 15

Emitter-base voltage VEBO 1.5

Collector current IC70 mA

Base current IB7

Total power dissipation1)

TS ≤ 92°C

Ptot 230 mW

Junction temperature TJ150 °C

Ambient temperature T

-65 ... 150

Storage temperature TSt

-65 ... 150

1TS is measured on the collector lead at the soldering point to the pcb

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BFP460

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point1) RthJS ≤ 250 K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR)CEO 4.5 5.8 - V

Collector-emitter cutoff current

VCE = 15 V, VBE = 0

VCE = 2 V, VBE = 0

VCE = 5 V, VBE = 0 , TA = 85°C

Verified by random sampling

ICES

1000

Collector-base cutoff current

VCB = 2 V, IE = 0

VCB = 5 V, IE = 0

ICBO

Emitter-base cutoff current

VEB = 0,5 V, IC = 0

IEBO - 1 500

DC current gain

VCE = 3 V, IC = 20 mA , pulse measured

hFE 90 120 160 -

1For calculation of RthJA please refer to Application Note AN077 Thermal Resistance

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BFP460

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 30 mA, VCE = 3 V, f = 1 GHz

fT16 22 - GHz

Collector-base capacitance

VCB = 3 V, f = 1 MHz, VBE = 0 ,

emitter grounded

Ccb - 0.32 0.45 pF

Collector emitter capacitance

VCE = 3 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce - 0.28 -

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb - 0.55 -

Minimum noise figure

VCE = 2V, IC = 3 mA , ZS = ZSopt, f = 100 MHz

VCE = 3V, IC = 5 mA , ZS = ZSopt, f = 1.8 GHz

VCE = 3V, IC = 5 mA , ZS = ZSopt, f = 3 GHz

NFmin

0.7

1.1

1.2

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BFP460

Electrical Characteristics at T

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Maximum power Gain1)

IC = 3 mA, VCE = 1.5 V, ZS = ZSopt,ZL = ZLopt,

f = 100 MHz

IC = 20 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt,

f = 1,8 GHz

f = 3 GHz

Gmax

26.5

17.5

12.5

Transducer gain

IC = 3 mA, VCE = 1.5 V, ZS = ZL = 50Ω,

f = 100 MHz

IC = 20 mA, VCE = 3 V, ZS = ZL = 50Ω ,

f = 1.8 GHz

f = 3 GHz

|S21e|2

10.5

Third order intercept point at output2)

VCE = 3 V, IC = 20 mA, f = 100 MHz

VCE = 3 V, IC = 20 mA, f = 1.8 GHz

IP3

23.5

27.5

dBm

1dB compression point at output

VCE = 3V, IC = 20mA , ZS=ZL = 50Ω, f= 100 MHz

VCE = 3V, IC = 20mA, ZS=ZL = 50Ω, f = 1.8 GHz

VCE = 3V, IC = 35mA, ZS=ZL = 50Ω, f = 1.8 GHz

P-1dB

9.5

11.5

1Gma = |S21 / S12| (k-(k²-1)1/2), Gms = S21 / S12

2IP3 value depends on termination of all intermodulation frequency components.

Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz

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BFP460

Total power dissipation Ptot = ƒ(TS)

0 15 30 45 60 75 90 105 120 A150

100

120

140

160

180

200

220

260

Collector-base capacitance Ccb= ƒ(VCB)

f = 1MHz

0 2 4 6 8 10 V14

VCB

0.1

0.2

0.3

0.4

0.5

0.7

CCB

Third order Intercept Point IP3=ƒ(IC)

(Output, ZS=ZL=50Ω)

VCE = parameter, f = 1800MHz

0 10 20 30 40 mA 55

dBm

IP3

Transition frequency fT= ƒ(IC)

f = 1 GHz

VCE = parameter

0 10 20 30 40 mA 60

GHz

3-4V

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BFP460

Power gain Gma, Gms, |S21|2 = ƒ (f)

VCE = 3 V, IC = 20 mA

01234GHz 6

Gms

Gma

|S21|²

Power gain Gma, Gms = ƒ (IC)

VCE = 3V

f = parameter in GHz

0 10 20 30 40 mA 60

0.9

1.8

2.4

Power gain Gma, Gms = ƒ (VCE)

IC = 20 mA

f = parameter in GHz

0.5 1 1.5 2 2.5 3 3.5 V4.5

VCE

0.9

1.8

2.4

Noise figure F = ƒ(IC)

VCE = 2 V, f = parameter

ZS = ZSopt

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BFP460

Third order Intercept Point IP3=ƒ(IC)

(Output, ZS=ZL=50Ω)

VCE = parameter, f = 100MHz

0 10 20 30 40 50 60 mA 80

dBm

IP3

1.5V

2.5V

Noise figure F = ƒ(f)

VCE = 2V, ZS = ZSopt , IC = parameter

Source impedance for min.

noise figure vs. frequency

VCE = 2V, IC = parameter

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BFP460

SPICE Parameter

For the SPICE model as well as for the S-parameters (including noise parameters)

please refer to our internet website www.infineon.com/rf.models.

Please consult our website and download the latest versions before actually

starting your design.

You find the BFP460 SPICE model in the internet in MWO- and ADS- format which

you can import into these circuit simulation tools very quickly and conveniently.

The simulation data have been generated and verified using typical devices.

The BFP460 SPICE model reflects the typical DC- and RF-performance with

high accuracy.

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BFP460

Package SOT343

Package Outline

Foot Print

Marking Layout (Example)

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

2005, June

Date code (YM)

BGA420

Type code

0.2

2.15

2.3

1.1

Pin 1

0.6

0.8

1.6

1.15

0.9

1.25

±0.1

0.1 MAX.

2.1

±0.1

0.15 +0.1

-0.05

0.3 +0.1

2±0.2

±0.1

0.9

+0.1

0.6

0.2

1.3

-0.05

0.15

0.1 M

0.1

0.1 MIN.

Pin 1

Manufacturer

2010-05-17

BFP460

Datasheet Revision History: 17 May 2010

This datasheet replaces the revision from 14 August 2008.

The product itself has not been changed and the device characteristics remain unchanged.

Only the product description and information available in the datasheet has been expanded

and updated.

Previous Revision: 14 August 2008

Page Subject (changes since last revision)

1 Maximum ratings for collector current ICmax, base current IBmax and total

power dissipation Ptot increased

2 Typical values for leakage currents included, maximum leakage current values

reduced

3 Noise description at 100 MHz added

4 Gain and linearity description at 100 MHz added

5 - 7 Curves for IP3 and noise at 100 MHz added

2010-05-17

BFP460

Edition 2009-11-16

Published by

Infineon Technologies AG

81726 Munich, Germany

 2009 Infineon Technologies AG

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of conditions or characteristics. With respect to any examples or hints given herein,

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please contact the nearest Infineon Technologies Office ( <www.infineon.com>).

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For information on the types in question, please contact the nearest Infineon

Technologies Office.

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