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Motorola Thyristor Device Data
Designed for high performance full-wave ac control applications where high
noise immunity and high commutating di/dt are required.
•Blocking Voltage to 800 Volts
•On-State Current Rating of 15 Amperes RMS at 80°C
•Uniform Gate Trigger Currents in Three Modes
•High Immunity to dv/dt — 250 V/µs minimum at 125°C
•Minimizes Snubber Networks for Protection
•Industry Standard TO-220AB Package
•High Commutating di/dt — 9.0 A/ms minimum at 125°C
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol Parameter Value Unit
VDRM Peak Repetitive Off-State Voltage (1)
(–40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC15D
MAC15M
MAC15N
400
600
800
Volts
IT(RMS) On-State RMS Current
(60 Hz, TC = 80°C) 15 A
ITSM Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C) 150 A
I2tCircuit Fusing Consideration (t = 8.3 ms) 93 A2sec
PGM Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) 20 Watts
PG(AV) Average Gate Power (t = 8.3 ms, TC = 80°C) 0.5 Watts
TJOperating Junction Temperature Range –40 to +125 °C
Tstg Storage Temperature Range –40 to +150 °C
THERMAL CHARACTERISTICS
RθJC
RθJA Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient 2.0
62.5 °C/W
TLMaximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds 260 °C
(1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.