3–55
Motorola Thyristor Device Data
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  
Designed for high performance full-wave ac control applications where high
noise immunity and high commutating di/dt are required.
Blocking Voltage to 800 Volts
On-State Current Rating of 15 Amperes RMS at 80°C
Uniform Gate Trigger Currents in Three Modes
High Immunity to dv/dt — 250 V/µs minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
High Commutating di/dt — 9.0 A/ms minimum at 125°C
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol Parameter Value Unit
VDRM Peak Repetitive Off-State Voltage (1)
(–40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC15D
MAC15M
MAC15N
400
600
800
Volts
IT(RMS) On-State RMS Current
(60 Hz, TC = 80°C) 15 A
ITSM Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C) 150 A
I2tCircuit Fusing Consideration (t = 8.3 ms) 93 A2sec
PGM Peak Gate Power (Pulse Width 1.0 µs, TC = 80°C) 20 Watts
PG(AV) Average Gate Power (t = 8.3 ms, TC = 80°C) 0.5 Watts
TJOperating Junction Temperature Range 40 to +125 °C
Tstg Storage Temperature Range 40 to +150 °C
THERMAL CHARACTERISTICS
RθJC
RθJA Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient 2.0
62.5 °C/W
TLMaximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds 260 °C
(1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
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SEMICONDUCTOR TECHNICAL DATA
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
CASE 221A-06
(TO-220AB)
Style 4
MT2
MT1
MT2G
TRIACS
15 AMPERES RMS
400 thru 800
VOLTS
*Motorola preferred devices
REV 1
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3–56 Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol Characteristic Min Typ Max Unit
OFF CHARACTERISTICS
IDRM Peak Repetitive Blocking Current
(VD = Rated VDRM, Gate Open) TJ = 25°C
TJ = 125°C
0.01
2.0
mA
ON CHARACTERISTICS
VTM Peak On-State Voltage*
(ITM = ±21 A Peak) 1.2 1.6 Volts
IGT Continuous Gate Trigger Current (VD = 12 V, RL = 100 )
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
5.0
5.0
5.0
13
16
18
35
35
35
mA
IHHold Current
(VD = 12 V, Gate Open, Initiating Current = ±150 mA) 20 40 mA
ILLatch Current (VD = 24 V, IG = 35 mA)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
33
36
33
50
80
50
mA
VGT Gate Trigger Voltage (VD = 12 V, RL = 100 )
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
0.5
0.5
0.5
0.75
0.72
0.82
1.5
1.5
1.5
Volts
DYNAMIC CHARACTERISTICS
(di/dt)cRate of Change of Commutating Current* See Figure 10.
(VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/µs, CL = 10 µF
Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) LL = 40 mH
9.0 A/ms
dv/dt Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) 250 V/µs
*Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
Figure 1. RMS Current Derating
IT(RMS), RMS ON-STATE CURRENT (AMP)
125
120
115
110
105
100
95
90
85
80 1614121086420
TC, CASE TEMPERATURE ( C)
°
Figure 2. On-State Power Dissipation
IT(RMS), ON-STATE CURRENT (AMP) 1614121086420
20
18
16
14
12
10
8
6
4
2
PAV, AVERAGE POWER (WATTS)
0
DC
α
= 30 and 60
°
α
= 90
°
α
= 120
°α
= 180
°
DC 180
°
120
°
90
°
60
°
α
= 30
°
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3–57
Motorola Thyristor Device Data
Figure 3. On-State Characteristics
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
100
0
IT, INSTANTANEOUS ON-STATE CURRENT (AMP)
0.5 1 1.5 2 2.5 3 3.5 4
10
1
0.1
MAXIMUM @ TJ = 125
°
C
TYPICAL AT
TJ = 25
°
C
MAXIMUM @ TJ = 25
°
C
Figure 4. Thermal Response
t, TIME (ms)
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
0.1
0.01 1·104
10001001010.1
Figure 5. Hold Current Variation
TJ, JUNCTION TEMPERATURE (
°
C)
40
IH, HOLD CURRENT (mA)
40
510 20 50 80 110 125
MT2 POSITIVE
MT2 NEGATIVE
TJ, JUNCTION TEMPERATURE (
°
C)TJ, JUNCTION TEMPERATURE (
°
C)
IGT, GATE TRIGGER CURRENT (mA)
VGT, GATE TRIGGER VOLTAGE (VOLT)
40 10 20 50 80 110 125
100
1
Q3
Q1
Q2
OFF-STATE VOLTAGE = 12 V
RL = 140
1
0.5
40 10 +20 50 80 110 125
Q1
Q2
Q3
OFF-STATE VOLTAGE = 12 V
RL = 140
Figure 6. Gate Trigger Current Variation Figure 7. Gate Trigger Voltage Variation
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3–58 Motorola Thyristor Device Data
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential)
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
5000
4K
3K
2K
1K
010000100010010
dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE
Figure 9. Critical Rate of Rise of
Commutating Voltage
(di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
(V/ s)
µ
VD = 800 Vpk
TJ = 125
°
C
ITM
tw
VDRM (di/dt)c = 6f ITM
1000
f = 1
2 tw
TJ = 125
°
C
100°
C
75°
C
10 100
100
10
1
LL1N4007
400 V
+
MEASURE
I
CHARGE
CONTROL
CHARGE TRIGGER
NON-POLAR
CL
51
2
1
1N914
G
TRIGGER CONTROL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage
(dv/dt) , CRITICAL RATE OF RISE OF
(V/ s)
µ
c
COMMUTATING VOLTAGE
20 30 40 50 60 70 80 90