SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS 15 AMPERES RMS 400 thru 800 VOLTS Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. * Blocking Voltage to 800 Volts * On-State Current Rating of 15 Amperes RMS at 80C * Uniform Gate Trigger Currents in Three Modes * High Immunity to dv/dt -- 250 V/s minimum at 125C MT2 * Minimizes Snubber Networks for Protection * Industry Standard TO-220AB Package * High Commutating di/dt -- 9.0 A/ms minimum at 125C MT1 MT2 G CASE 221A-06 (TO-220AB) Style 4 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol VDRM IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg Parameter Peak Repetitive Off-State Voltage (1) (- 40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) Value Unit Volts MAC15D MAC15M MAC15N 400 600 800 On-State RMS Current (60 Hz, TC = 80C) 15 A Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125C) 150 A Circuit Fusing Consideration (t = 8.3 ms) 93 A2sec Peak Gate Power (Pulse Width 1.0 s, TC = 80C) 20 Watts Average Gate Power (t = 8.3 ms, TC = 80C) 0.5 Watts Operating Junction Temperature Range - 40 to +125 C Storage Temperature Range - 40 to +150 C Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient 2.0 62.5 C/W Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds 260 C THERMAL CHARACTERISTICS RJC RJA TL (1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Thyristor Device Data 3-55 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Min Typ Max -- -- -- -- 0.01 2.0 Peak On-State Voltage* (ITM = 21 A Peak) -- 1.2 1.6 Continuous Gate Trigger Current (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) 5.0 5.0 5.0 13 16 18 35 35 35 Hold Current (VD = 12 V, Gate Open, Initiating Current = 150 mA) -- 20 40 Latch Current (VD = 24 V, IG = 35 mA) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) -- -- -- 33 36 33 50 80 50 Gate Trigger Voltage (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) 0.5 0.5 0.5 0.75 0.72 0.82 1.5 1.5 1.5 9.0 -- -- A/ms 250 -- -- V/s Symbol Unit OFF CHARACTERISTICS IDRM Peak Repetitive Blocking Current (VD = Rated VDRM, Gate Open) mA TJ = 25C TJ = 125C ON CHARACTERISTICS VTM IGT IH IL VGT Volts mA mA mA Volts DYNAMIC CHARACTERISTICS (di/dt)c dv/dt Rate of Change of Commutating Current* See Figure 10. (VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/s, Gate Open, TJ = 125C, f = 250 Hz, No Snubber) CL = 10 F LL = 40 mH Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) 125 20 120 18 115 = 30 and 60 110 = 90 105 = 180 100 95 = 120 DC 90 85 80 PAV, AVERAGE POWER (WATTS) TC, CASE TEMPERATURE (C) *Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. DC 180 120 16 90 14 60 12 10 = 30 8 6 4 2 0 2 4 6 8 10 12 IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 1. RMS Current Derating 3-56 14 16 0 0 2 4 6 8 10 12 IT(RMS), ON-STATE CURRENT (AMP) 14 16 Figure 2. On-State Power Dissipation Motorola Thyristor Device Data 1 MAXIMUM @ TJ = 125C 10 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1 * 104 1000 Figure 4. Thermal Response MAXIMUM @ TJ = 25C 40 1 I H, HOLD CURRENT (mA) I T, INSTANTANEOUS ON-STATE CURRENT (AMP) TYPICAL AT TJ = 25C r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 100 0.1 0 0.5 1 1.5 2 2.5 3 3.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) MT2 POSITIVE MT2 NEGATIVE 5 - 40 4 Figure 3. On-State Characteristics 110 125 1 Q2 Q3 Q1 OFF-STATE VOLTAGE = 12 V RL = 140 - 10 20 50 80 TJ, JUNCTION TEMPERATURE (C) 110 Figure 6. Gate Trigger Current Variation Motorola Thyristor Device Data OFF-STATE VOLTAGE = 12 V RL = 140 VGT, GATE TRIGGER VOLTAGE (VOLT) IGT, GATE TRIGGER CURRENT (mA) 20 50 80 TJ, JUNCTION TEMPERATURE (C) Figure 5. Hold Current Variation 100 1 - 40 - 10 125 Q1 Q3 Q2 0.5 - 40 - 10 +20 50 80 TJ, JUNCTION TEMPERATURE (C) 110 125 Figure 7. Gate Trigger Voltage Variation 3-57 dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE (V/ s) 100 5000 (dv/dt) c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/ s) VD = 800 Vpk TJ = 125C 4K 3K 2K 1K 0 10 100 1000 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) TJ = 125C tw VDRM f= 1 2 tw 6f I (di/dt)c = TM 1000 20 30 40 50 60 70 80 90 100 (di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 8. Critical Rate of Rise of Off-State Voltage (Exponential) Figure 9. Critical Rate of Rise of Commutating Voltage LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC 1N4007 MEASURE I TRIGGER CHARGE CONTROL NON-POLAR CL TRIGGER CONTROL CHARGE 75C ITM 1 10 10000 100C 10 - + 400 V 2 1N914 51 G 1 Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage 3-58 Motorola Thyristor Device Data