V23990-K429-A40-PM
datasheet
MiniSKiiP
®
3 PIM 1200 V / 75 A
● Solderless interconnection
● Trench Fieldstop IGBT4 technology
● Industrial Motor Drives
● V23990-K429-A40-PM
Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Repetitive peak reverse voltage
V
RRM
1600 V
Maximum Junction Temperature
T
jmax
150 °C
Inverter Switch / Brake Switch
t
SC
Tj = 150 °C 10 µs
V
CC
VGE = 15 V 800 V
Tj = Tjmax
tp limited by Tjmax
1200
±20
W
A
Collector-emitter breakdown voltage
Repetitive peak collector current
DC collector current
V
CE
I
CRM
I
C
175
Tj = Tjmax
Features
P
tot
MiniSKiiP
®
3 housing
Schematic
tp = 10 ms
450
Rectifier Diode
A
Types
I2t-value
Maximum Ratings
I
FAV
A2s
I
FSM
Condition
50
A
V
°C
V
Maximum Junction Temperature
Power dissipation
V
GE
T
jmax
P
tot
Short circuit ratings
Gate-emitter peak voltage
A
W
DC forward current
Surge (non-repetitive) forward current
Power dissipation
I
2
t
Ts = 80 °C 93
1020
Tj = 25 °C
75
225
Ts = 80 °C 222
28 Jan. 2018 / Revision 7copyright Vincotech 1
V23990-K429-A40-PM
datasheet
Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Maximum Ratings
Condition
Inverter Diode / Brake Diode
Thermal Properties
Isolation Properties
DC Test voltage* t = 2 s 5500 V
AC voltage t = 1 min 2500 V
6,3 mm
6,3 mm
CTI >200
* 100 % tested in production
With std lid
For more information see handling instructions
With std lid
For more information see handling instructions
Comparative Tracking Index
175Maximum Junction Temperature °C
V1200
I
FRM
T
jmax
Repetitive peak forward current
V
RRM
Repetitive peak reverse voltage
WPower dissipation
P
tot
DC forward current
A
Tj = Tjmax
tp limited by Tjmax
A
I
F
75
-40…+(Tjmax - 25) °C
Storage temperature
T
stg
-40…+125 °C
Clearance
Creepage distance
T
op
Operation temperature under switching condition
Isolation voltage
V
is
225
Ts = 80 °C 154
28 Jan. 2018 / Revision 7copyright Vincotech 2
V23990-K429-A40-PM
datasheet
Parameter Symbol Unit
V
GE
[V]
V
GS
[V]
V
r
[V]
V
CE
[V]
V
DS
[V]
I
C
[A]
I
F
[A]
I
D
[A]
T
j
[°C] Min Typ Max
25 0,8 1,03 1,35
125 0,93
25 0,92
125 0,79
25 0,004
125 0,005
25 0,1
125 1,1
Thermal resistance junction to sink
Rth(j-s)
0,75
25 1,6 1,97 2,4
150 2,42
25 0,1
150
25 600
150
25 173
150 189
25 30
150 40
25 284
150 359
25 78
150 120
25 6,51
150 10,61
25 4,25
150 6,68
Thermal resistance junction to sink
Rth(j-s)
0,43
25 1,5 2,01 2,8
150 2,05
25 57,3
150 68,4
25 310
150 602
25 6,29
150 14,8
25 1733
150 384
25 2,21
150 5,51
Thermal resistance junction to sink
Rth(j-s)
0,62
290
6,55,85
10
25
V
V
nA
%
Ω
3-3
1000
1200
600
0
tr
td(off)
V
CE
= V
GE
Cies
Qrr
trr
VF
Peak reverse recovery current
Reverse transfer capacitance
Diode forward voltage
Inverter Diode / Brake Diode
Reverse recovery time
Reverse recovered energy
Peak rate of fall of recovery current
Reverse recovered charge
IGES
VGE(th)
VCEsat
ICES
Erec
Coss
Rgint
tf
Eon
Eoff
IRRM
td(on)
Crss
Input capacitance
Output capacitance
Turn-off energy loss
Collector-emitter saturation voltage
ValueConditions
Characteristic Values
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
VF
Vto
rt
Rectifier Diode
35
K/W
V
V
Ω
mAReverse current
Ir
235
f = 1 MHz
R
gon
= 4 Ω
0
20
15
±15 75
75
Collector-emitter cut-off current incl. Diode
Fall time
Turn-off delay time
Turn-on delay time
Rise time
Gate-emitter leakage current
Turn-on energy loss
Integrated Gate resistor
Inverter Switch / Brake Switch
Gate emitter threshold voltage
R
goff
= 4 Ω ±15 600 75
0,003 25
mW/K
R
100
P
Ω1670,3125
Rated resistance
R
Power dissipation constant
Deviation of R
100
ΔR/R
R
100
= 1670 Ω
1500
λ
paste
= 2,5 W/mK
(HPTP)
25
0
Thermistor
R
gon
= 4 Ω
4400
µC
mWs
A/µs
25
100
100
25
ns
V
pF
mWs
Ω
ns
mA
λ
paste
= 2,5 W/mK
(HPTP) K/W
λ
paste
= 2,5 W/mK
(HPTP) K/W
A
75
A-value
B(25/50)
Tol. %
B-value
B(25/100)
Tol. % 1,731*10
-5
1/K²
Vincotech PTC Reference
(dirf/dt)max
25
25
E
7,635*10
-3
1/K
copyright Vincotech 3 28 Jan. 2018 / Revision 7
V23990-K429-A40-PM
datasheet
figure 1. IGBT figure 2. IGBT
Typical output characteristics
I
C
= f(V
CE
) I
C
= f(V
CE
)
At At
t
p
= 250 μs t
p
= 250 μs
T
j
= 25 °C T
j
= 150 °C
V
GE
from 7 V to 17 V in steps of 1 V V
GE
from 7 V to 17 V in steps of 1 V
figure 3. IGBT figure 4. FWD
Typical transfer characteristics Typical diode forward current as
I
C
= f(V
GE
) a function of forward voltage
I
F
= f(V
F
)
At At
t
p
= 250 μs t
p
= 250 μs
V
CE
= 10 V
Inverter / Brake Characteristics
Typical output characteristics
0
50
100
150
200
012345
V
CE
(V)
I
C
(A)
0
15
30
45
60
75
0 2 4 6 8 10 12
V
GE
(V)
I
C
(A)
Tj = 25°C
Tj = Tjmax-25°C
0
50
100
150
200
250
0 0,8 1,6 2,4 3,2 4
V
F
(V)
I
F
(A)
Tj = 25°C Tj = Tjmax-25°C
0
50
100
150
200
012345
V
CE
(V)
I
C
(A)
copyright Vincotech 4 28 Jan. 2018 / Revision 7
V23990-K429-A40-PM
datasheet
figure 5. IGBT figure 6. IGBT
Typical switching energy losses Typical switching energy losses
as a function of collector current as a function of gate resistor
E = f(I
C
)E = f(R
G
)
With an inductive load at With an inductive load at
T
j
= 25/150 °C T
j
= 25/150 °C
V
CE
=600 V V
CE
=600 V
V
GE
= ±15 V V
GE
= ±15 V
R
gon
= 4 Ω I
C
= 75 A
R
goff
= 4 Ω
figure 7. FWD figure 8. FWD
Typical reverse recovery energy loss Typical reverse recovery energy loss
as a function of collector current as a function of gate resistor
E
rec
= f(I
C
)E
rec
= f(R
G
)
With an inductive load at With an inductive load at
T
j
= 25/150 °C T
j
= 25/150 °C
V
CE
=600 V V
CE
=600 V
V
GE
= ±15 V V
GE
= ±15 V
R
gon
= 4 Ω I
C
= 75 A
Inverter / Brake Characteristics
Eon High T
Eoff High T
Eon Low T
Eoff Low T
0
5
10
15
20
25
30
0 30 60 90 120 150
I
C
(A)
E (mWs)
Eoff High T
Eon High T
Eon Low T
E
off Low T
0
5
10
15
20
25
30
0 4 8 12 16 20
R
G
(
Ω
)
E (mWs)
Tj = Tjmax -25°C Erec
Tj = 25°C
Erec
0
1,5
3
4,5
6
7,5
0 25 50 75 100 125 150
I
C
(A)
E (mWs)
Tj = Tjmax -25°C Erec
Tj
= 25°C
E
rec
0
1,5
3
4,5
6
7,5
0 4 8 12 16 20
R
G
(
Ω
)
E (mWs)
25/150 25/150
25/150 25/150
copyright Vincotech 5 28 Jan. 2018 / Revision 7
V23990-K429-A40-PM
datasheet
figure 9. IGBT figure 10. IGBT
Typical switching times as a Typical switching times as a
function of collector current function of gate resistor
t = f(I
C
)t = f(R
G
)
With an inductive load at With an inductive load at
T
j
= 150 °C T
j
= 150 °C
V
CE
=600 V V
CE
=600 V
V
GE
= ±15 V V
GE
= ±15 V
R
gon
= 4 Ω I
C
= 75 A
R
goff
= 4 Ω
figure 11. FWD figure 12. FWD
Typical reverse recovery time as a Typical reverse recovery time as a
function of collector current function of IGBT turn on gate resistor
t
rr
= f(I
C
)t
rr
= f(R
gon
)
At At
T
j
= 25/150 °C T
j
= 25/150 °C
V
CE
=600 V V
R
=600 V
V
GE
= ±15 V I
F
=75 A
R
gon
= 4 Ω V
GE
=±15 V
Inverter / Brake Characteristics
t
doff
t
f
t
don
t
r
0,001
0,01
0,1
1
0 30 60 90 120 150
I
C
(A)
t (µs)
Tj = Tjmax -25°C trr
Tj = 25°C trr
0
0,2
0,4
0,6
0,8
1
0 4 8 12 16 20
R
g on
(
Ω
ΩΩ
Ω
)
t
rr
(µs)
t
doff
t
f
t
don
t
r
0,001
0,01
0,1
1
0 4 8 12 16 20
R
G
(
Ω
ΩΩ
Ω
)
t (µs)
Tj = Tjmax -25°C
trr
trr
Tj = 25°C
0
0,2
0,4
0,6
0,8
1
0 30 60 90 120 150
I
C
(A)
t
rr
(µs)
25/150 25/150
copyright Vincotech 6 28 Jan. 2018 / Revision 7
V23990-K429-A40-PM
datasheet
figure 13. FWD figure 14. FWD
Typical reverse recovery charge as a Typical reverse recovery charge as a
function of collector current function of IGBT turn on gate resistor
Q
rr
= f(I
C
)Q
rr
= f(R
gon
)
At
At At
T
j
= 25/150 °C T
j
= 25/150 °C
V
CE
=600 V V
R
=600 V
V
GE
= ±15 V I
F
=75 A
R
gon
= 4 Ω V
GE
=±15 V
figure 15. FWD figure 16. FWD
Typical reverse recovery current as a Typical reverse recovery current as a
function of collector current function of IGBT turn on gate resistor
I
RRM
= f(I
C
)I
RRM
= f(R
gon
)
At At
T
j
= 25/150 °C T
j
= 25/150 °C
V
CE
=600 V V
R
=600 V
V
GE
= ±15 V I
F
=75 A
R
gon
= 4 Ω V
GE
=±15 V
Inverter / Brake Characteristics
Tj = Tjmax - 25°C
I
RRM
Tj = 25°C IRRM
0
20
40
60
80
100
0 4 8 12 16 20
R
gon
(
Ω
ΩΩ
Ω
)
I
rrM
(A)
Tj = Tjmax -25°C Qrr
Tj = 25°C Qrr
0
5
10
15
20
25
0 4 8 12 16 20
R
g on
(Ω)
Q
rr
(µC)
Tj = Tjmax -25°C
IRRM
Tj = 25°C IRRM
0
20
40
60
80
100
0 30 60 90 120 150
I
C
(A)
I
rrM
(A)
Tj = Tjmax -25°C
Qrr
Tj = 25°C Qrr
0
5
10
15
20
25
0 30 60 90 120 150
I
C
(A)
Q
rr
(µC)
25/150 25/150
25/150 25/150
copyright Vincotech 7 28 Jan. 2018 / Revision 7
V23990-K429-A40-PM
datasheet
figure 17. FWD figure 18. FWD
Typical rate of fall of forward Typical rate of fall of forward
and reverse recovery current as a and reverse recovery current as a
function of collector current function of IGBT turn on gate resistor
dI
0
/dt,dI
rec
/dt = f(I
C
)dI
0
/dt,dI
rec
/dt = f(R
gon
)
At At
T
j
= 25/150 °C T
j
= 25/150 °C
V
CE
=600 V V
R
=600 V
V
GE
= ±15 V I
F
=75 A
R
gon
= 4 Ω V
GE
=±15 V
figure 19. IGBT figure 20. FWD
IGBT transient thermal impedance FWD transient thermal impedance
as a function of pulse width as a function of pulse width
Z
th(j-s)
= f(t
p
)Z
th(j-s)
= f(t
p
)
At At
D = t
p
/ TD = t
p
/ T
R
th(j-s)
= 0,43 K/W R
th(j-s)
= 0,62 K/W
IGBT thermal model values FWD thermal model values
R (K/W) Tau (s) R (K/W) Tau (s)
1,59E-02 3,18E+00 2,30E-02 4,61E+00
2,98E-02 2,71E-01 4,31E-02 3,92E-01
7,90E-02 4,84E-02 1,14E-01 7,01E-02
2,29E-01 1,62E-02 3,31E-01 2,34E-02
4,27E-02 3,15E-03 6,18E-02 4,55E-03
2,86E-02 4,83E-04 4,14E-02 6,99E-04
1,97E-03 2,33E-04 2,86E-03 3,38E-04
Inverter / Brake Characteristics
t
p
(s)
Z
th(j-s)
(K/W)
10
1
10
0
10
-1
10
-2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-5
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
t
p
(s)
Z
th(j-s)
(K/W)
10
1
10
0
10
-1
10
-2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-5
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
dI0/dt
dIrec/dt
0
500
1000
1500
2000
2500
3000
0 4 8 12 16 20
R
gon
(
Ω
ΩΩ
Ω
)
di
rec
/ dt (A/µs)
0
500
1000
1500
2000
2500
3000
0 30 60 90 120 150
I
C
(A)
di
rec
/ dt (A/
µ
µ
µ
µ
s)
dIrec/dt
dI0/dt
25/150 25/150
copyright Vincotech 8 28 Jan. 2018 / Revision 7
V23990-K429-A40-PM
datasheet
figure 21. IGBT figure 22. IGBT
Power dissipation as a Collector current as a
function of heatsink temperature function of heatsink temperature
P
tot
= f(T
s
)I
C
= f(T
s
)
At At
T
j
= 175 °C T
j
= 175 °C
V
GE
=15 V
figure 23. FWD figure 24. FWD
Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
P
tot
= f(T
s
)I
F
= f(T
s
)
At At
T
j
= 175 °C T
j
= 175 °C
Inverter / Brake Characteristics
0
50
100
150
200
250
300
350
400
450
0 50 100 150 200
T
s
(
o
C)
P
tot
(W)
0
20
40
60
80
100
0 50 100 150 200
T
s
(
o
C)
I
C
(A)
0
50
100
150
200
250
300
0 50 100 150 200
T
s
(
o
C)
P
tot
(W)
0
20
40
60
80
100
0 50 100 150 200
T
s
(
o
C)
I
F
(A)
copyright Vincotech 9 28 Jan. 2018 / Revision 7
V23990-K429-A40-PM
datasheet
figure 25. IGBT figure 26. IGBT
Safe operating area as a function
Gate voltage vs Gate charge
of collector-emitter voltage
I
C
= f(
V
CE
)
V
GE
= f(
Q
g
)
At At
D
=
single pulse I
C
= 75 A
T
s
= 80 ºC
V
GE
= ±15 V
T
j
= T
jmax
Inverter / Brake Characteristics
V
CE
(V)
I
C
(A)
10
3
10
0
10
-1
10
1
10
2
10
1
10
2
100uS
1mS
10mS
100mS
DC
10
0
10
3
10uS
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300 350 400
Q
g
(nC)
V
GE
(V)
240 V
960 V
copyright Vincotech 10 28 Jan. 2018 / Revision 7
V23990-K429-A40-PM
datasheet
figure 1. Diode figure 2. Diode
Typical diode forward current as Diode transient thermal impedance
a function of forward voltage as a function of pulse width
I
F
= f(V
F
)Z
th(j-s)
= f(t
p
)
At At
t
p
= 250 μs D = t
p
/ T
R
th(j-s)
= 0,75 K/W
figure 3. Diode figure 4. Diode
Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
P
tot
= f(T
s
)I
F
= f(T
s
)
At At
T
j
= 150 ºC T
j
= 150 ºC
Rectifier Diode
0
20
40
60
80
100
0 0,3 0,6 0,9 1,2 1,5
VF (V)
IF (A)
Tj = 25°C
Tj = Tjmax-25°C
t
p
(s)
Z
th(j-s)
(K/W)
10
0
10
-1
10
-2
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-5
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
0
30
60
90
120
150
180
210
0 30 60 90 120 150
T
s
(
o
C)
P
tot
(W)
0
20
40
60
80
100
0 30 60 90 120 150
T
s
(
o
C)
I
F
(A)
copyright Vincotech 11 28 Jan. 2018 / Revision 7
V23990-K429-A40-PM
datasheet
figure 1. Thermistor
Typical PTC characteristic
as a function of temperature
R
T
= f(T)
Thermistor
PTC-typical temperature characteristic
1000
1200
1400
1600
1800
2000
25 50 75 100 125
T (°C)
R (Ω)
copyright Vincotech 12 28 Jan. 2018 / Revision 7
V23990-K429-A40-PM
datasheet
T
j
150 °C
R
gon
4 Ω
R
goff
4 Ω
figure 1. IGBT figure 2. IGBT
Turn-off Switching Waveforms & definition of t
doff
, t
Eoff
Turn-on Switching Waveforms & definition of t
don
, t
Eon
(t
E
off
= integrating time for E
off
) (t
E
on
= integrating time for E
on
)
V
GE
(0%) = -15 V V
GE
(0%) = -15 V
V
GE
(100%) = 15 V V
GE
(100%) = 15 V
V
C
(100%) = 600 V V
C
(100%) = 600 V
I
C
(100%) = 75 A I
C
(100%) = 75 A
t
doff
= 0,36 μs t
don
= 0,19 μs
t
E
off
= 0,73 μs t
E
on
= 0,58 μs
figure 3. IGBT figure 4. IGBT
Turn-off Switching Waveforms & definition of t
f
Turn-on Switching Waveforms & definition of t
r
V
C
(100%) = 600 V V
C
(100%) = 600 V
I
C
(100%) = 75 A I
C
(100%) = 75 A
t
f
= 0,12 μs t
r
= 0,04 μs
Switching Definitions Inverter
General conditions
=
=
=
I
C 1%
VCE 90%
VGE 90%
-25
0
25
50
75
100
125
150
-0,2 -0,1 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9
time (us)
%
t
doff
t
Eoff
V
CE
I
C
V
GE
I
C10%
V
GE10%
t
don
V
CE 3%
-40
-10
20
50
80
110
140
170
200
2,8 2,9 3 3,1 3,2 3,3 3,4 3,5 3,6 3,7
time(us)
%
I
C
V
CE
t
Eon
V
GE
fitted
IC10%
IC 90%
IC 60%
IC 40%
-20
0
20
40
60
80
100
120
140
0,25 0,3 0,35 0,4 0,45 0,5 0,55 0,6
time (us)
%
V
CE
I
C
t
f
I
C10%
IC90%
-40
-10
20
50
80
110
140
170
200
3,1 3,2 3,3 3,4 3,5 3,6
time(us)
%
tr
V
CE
Ic
copyright Vincotech 13 28 Jan. 2018 / Revision 7
V23990-K429-A40-PM
datasheet
figure 5. IGBT figure 6. IGBT
Turn-off Switching Waveforms & definition of t
Eoff
Turn-on Switching Waveforms & definition of t
Eon
P
off
(100%) = 45,10 kW P
on
(100%) = 45,10 kW
E
off
(100%) = 6,68 mJ E
on
(100%) = 10,61 mJ
t
E
off
= 0,73 μs t
E
on
= 0,58 μs
figure 7. FWD
Turn-off Switching Waveforms & definition of t
rr
V
d
(100%) = 600 V
I
d
(100%) = 75 A
I
RRM
(100%) = -68 A
t
rr
= 0,60 μs
Switching Definitions Inverter
I
C
1%
VGE 90%
-20
0
20
40
60
80
100
120
-0,2 -0,05 0,1 0,25 0,4 0,55 0,7 0,85
time (us)
%
P
off
E
off
t
Eoff
U
ce3%
U
ge10%
-30
0
30
60
90
120
150
180
2,9 3 3,1 3,2 3,3 3,4 3,5 3,6 3,7
time(us)
%
P
on
E
on
t
Eon
IRRM10%
IRRM90%
IRRM100%
trr
-120
-80
-40
0
40
80
120
3 3,2 3,4 3,6 3,8 4
time(us)
%
Id
Vd
fitted
copyright Vincotech 14 28 Jan. 2018 / Revision 7
V23990-K429-A40-PM
datasheet
figure 8. FWD figure 9. FWD
Turn-on Switching Waveforms & definition of t
Qrr
Turn-on Switching Waveforms & definition of t
Erec
(t
Q
rr
= integrating time for Q
rr
) (t
Erec
= integrating time for E
rec
)
I
d
(100%) = 75 A P
rec
(100%) = 45,10 kW
Q
rr
(100%) = 14,81 μC E
rec
(100%) = 5,51 mJ
t
Q
rr
= 1,20 μs t
E
rec
= 1,20 μs
Switching Definitions Inverter
tQrr
-100
-60
-20
20
60
100
140
3 3,2 3,4 3,6 3,8 4 4,2 4,4 4,6
time(us)
%
Id Q
rr
-20
0
20
40
60
80
100
120
3 3,2 3,4 3,6 3,8 4 4,2 4,4 4,6
time(us)
%
P
rec
Erec
t
Erec
copyright Vincotech 15 28 Jan. 2018 / Revision 7
V23990-K429-A40-PM
datasheet
VIN Date code Name&Ver UL Lot Serial
VIN WWYY NNNNNNVV UL LLLLL SSSS
Type&Ver Lot number Serial Date code
TTTTTTTVV LLLLL SSSS WWYY
X Y Function Pin X Y
15,83 -25,3 G5 45 -25,9 2,2
15,83 -6,4 E5 46 10,82 8,74
15,83 -3,2 W 47 10,82 11,94
15,83 0 W 48 -32,82 8,74
15,83 3,2 W 49 -32,82 11,94
15,83 6,4 W 50 4,32 22,1
51 4,32 25,3
52 3,42 -25,3
15,83 22,1 G6 53 3,42 -22,1
15,83 25,3 E6 54
8,13 -25,3 -T 55
8,13 -22,1 +T 56 3,42 -9,3
57 3,42 -6,1
8,13 25,3 -DC 58 -39,32 15,7
59 -39,32 18,9
41,82 -12,2 E3 60 -39,32 22,1
41,82 -8,98 V 61 -39,32 25,3
41,82 -5,79 V 62 -40,22 -25,3
0,43 22,1 G4 63 -40,22 -22,1
0,43 25,3 E4 64
-1,07 -25,3 G3 65
66 -40,22 -9,3
67 -40,22 -6,09
-1,82 -8,98 V 68 -10,18 -25,3
-1,82 -5,79 V 69 -10,18 -22,1
70
71
-7,27 25,3 -DC 72 -10,18 -9,5
-14,97 22,1 G2 73 -10,18 -6,3
-14,97 25,3 E2 74 -10,18 6,3
75 -10,18 9,5
23,95 -11,8 U 76 -10,18 22,1
23,95 -8,63 U 77 -10,18 25,3
23,95 -5,42 E1 78 -53,82 -25,3
-19,22 -25,3 G1 79 -53,82 -22,1
80
-19,7 -11,8 U 81
-19,7 -8,62 U 82 -53,82 -9,5
83 -53,82 -6,3
17,74 -1 +B 84
17,74 2,2 +B 85 -53,82 6,3
-22,67 22,1 -DC 86 -53,82 9,5
-22,67 25,3 -DC 87 -53,82 22,1
-25,9 -1 +B 88 -53,82 25,3
43 L3
44 L3
41 -rect
42 -rect
39 Not assembled L2
40 Not assembled
37 Not assembled
38 L2
35 L1
36 Not assembled Not assembled
33 L3
34 L1
31 Not assembled -rect
32 L3
29 L2
30 -rect
27 Not assembled Not assembled
28 L2
25 L1
26 Not assembled Not assembled
23 Not assembled +DC
24 L1
21 Not assembled
22 Not assembled +DC
19 +rect
20 Not assembled
17 -B
18 +rect
15 Not assembled EB
16 -B
13 Not assembled +DC
14 GB
11 Not assembled
12 +DC
9 +rect
10 Not assembled
7 Not assembled -B
8 Not assembled +rect
5 B
6 -B
3 B
4 B
1 +B
2 B
PCB pad table PCB pad table
Pin Function
V23990-K429-A40-/0A/-PM
V23990-K429-A40-/0B/-PM
V23990-K429-A40-/1A/-PM
V23990-K429-A40-/1B/-PM
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + no thermal grease
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
V23990-K429-A40-/4A/-PM
V23990-K429-A40-/4B/-PM
V23990-K429-A40-/5A/-PM
V23990-K429-A40-/5B/-PM
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Outline
Text
Datamatrix
Ordering Code Version
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
Pad positions refers to center point. For more informations on pad design please see package data
copyright Vincotech 16 28 Jan. 2018 / Revision 7
V23990-K429-A40-PM
datasheet
Pinout
Identification
ID Component Voltage Current
D8,D9,D10,D11,D12,D13
PTC1
Function Comment
T1,T2,T3,T4,T5,T6
D1,D2,D3,D4,D5,D6
1200 V
1200 V
Inverter Switch
Inverter Diode
IGBT
FWD
IGBT
FWD
Rectifier
PTC
T7
D7
1200 V
1200 V
1600 V Rectifier Diode
Thermistor
75 A
75 A
75 A
75 A
50 A
Brake Switch
Brake Diode
copyright Vincotech 17 28 Jan. 2018 / Revision 7
V23990-K429-A40-PM
datasheet
48
DISCLAIMER
LIFE SUPPORT POLICY
As used herein:
Handling instruction
Handling instructions for MiniSkiiP
®
3 packages see vincotech.com website.
Packaging instruction
Standard packaging quantity (SPQ) >SPQ Standard <SPQ Sample
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of
the life support device or system, or to affect its safety or effectiveness.
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use
of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third
parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s
intended use.
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in
significant injury to the user.
V23990-K429-A40-D7-14 28 Jan. 2018 Updated with HPTP all
Document No.: Date: Modification: Pages
Package data
Package data for MiniSkiiP
®
3 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
copyright Vincotech 18 28 Jan. 2018 / Revision 7