For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 28
LINEAR & POWER AMPLIFIERS - SMT
General Description
Features
Functional Diagram
The HMC407MS8G & HMC407MS8GE are high
efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC Power ampli ers which
operate between 5 and 7 GHz. The ampli er requires
no external matching to achieve operation and is
thus truly 50 Ohm matched at input and output. The
ampli er is packaged in a low cost, surface mount
8 leaded package with an exposed base for im-
proved RF and thermal performance. The ampli er
provides 15 dB of gain, +29 dBm of saturated power
at 28% PAE from a +5V supply voltage. Power down
capability is available to conserve current consum-
ption when the ampli er is not in use.
Gain: 15 dB
Saturated Power: +29 dBm
28% PAE
Supply Voltage: +5V
Power Down Capability
No External Matching Required
Electrical Speci cations, TA = +25° C, Vs = 5V, Vpd = 5V
Typical Applications
This ampli er is ideal for use as a power
ampli er for 5 - 7 GHz applications:
• UNII
• HiperLAN
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 5 - 7 5.6 - 6.0 GHz
Gain 10 15 18 12 15 18 dB
Gain Variation Over Temperature 0.025 0.035 0.025 0.035 dB/ °C
Input Return Loss 12 12 dB
Output Return Loss 15 15 dB
Output Power for 1 dB Compression (P1dB) 21 25 22 25 dBm
Saturated Output Power (Psat) 29 29 dBm
Output Third Order Intercept (IP3) 32 37 36 40 dBm
Noise Figure 5.5 5.5 dB
Supply Current (Icq) Vpd = 0V/5V 0.002 / 230 0.002 / 230 mA
Control Current (Ipd) Vpd = 5V 7 7 mA
Switching Speed tON, tOFF 30 30 ns
HMC407MS8G / 407MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
v03.1006
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
P1dB vs. Temperature Psat vs. Temperature
-25
-20
-15
-10
-5
0
5
10
15
20
2345678910
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
4 4.5 5 5.5 6 6.5 7 7.5 8
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
4 4.5 5 5.5 6 6.5 7 7.5 8
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
14
18
22
26
30
34
4 4.5 5 5.5 6 6.5 7 7.5 8
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
14
18
22
26
30
34
4 4.5 5 5.5 6 6.5 7 7.5 8
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
4 4.5 5 5.5 6 6.5 7 7.5 8
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
HMC407MS8G / 407MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
v03.1006
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 30
LINEAR & POWER AMPLIFIERS - SMT
Power Compression @ 5.8 GHz Output IP3 vs. Temperature
Noise Figure vs. Temperature Gain & Power vs. Supply Voltage
Reverse Isolation vs. Temperature Power Down Isolation
8
10
12
14
16
18
20
22
24
26
28
30
4.75 5 5.25
GAIN (dB)
P1dB, Psat (dBm)
Vcc SUPPLY VOLTAGE
(
Vdc
)
0
2
4
6
8
10
5 5.5 6 6.5 7
+25C
+85C
-40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
-40
-30
-20
-10
0
45678
ISOLATION (dB)
FREQUENCY (GHz)
-50
-40
-30
-20
-10
0
4 4.5 5 5.5 6 6.5 7 7.5 8
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
0
5
10
15
20
25
30
048121620
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
14
19
24
29
34
39
44
4 4.5 5 5.5 6 6.5 7 7.5 8
+25 C
+85 C
-40 C
IP3 (dBm)
FREQUENCY (GHz)
HMC407MS8G / 407MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
v03.1006
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Outline Drawing
Absolute Maximum Ratings
Gain, Power & Quiescent
Supply Current vs. Vpd @ 5.8 GHz
Collector Bias Voltage (Vcc1, Vcc2) +5.5 Vdc
Control Voltage (Vpd) +5.5 Vdc
RF Input Power (RFIN)(Vs = Vpd = +5Vdc) +20 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 31 mW/°C above 85 °C) 2 W
Thermal Resistance
(junction to ground paddle) 32 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
5
10
15
20
25
30
0
50
100
150
200
250
2.5 3 3.5 4 4.5 5
P1dB
Psat
Gain
Icq
GAIN (dB), P1dB (dBm), Psat (dBm)
I
cq
(
m
A)
Vpd (Vdc)
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC407MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H407
XXXX
HMC407MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H407
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
HMC407MS8G / 407MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
v03.1006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 32
LINEAR & POWER AMPLIFIERS - SMT
Pin Number Function Description Interface Schematic
1Vcc1
Power supply voltage for the rst ampli er stage. An external bypass capacitor
of 330 pF is required as shown in the application schematic.
2Vpd
Power control pin. For maximum power, this pin should be connected to 5V. A
higher voltage is not recommended. For lower die current, this voltage can be
reduced.
3, 6, 7 GND Ground: Backside of package has exposed metal ground slug that must be
connected to ground thru a short path. Vias under the device are required.
4RFIN This pin is AC coupled
and matched to 50 Ohms.
5RFOUT This pin is AC coupled
and matched to 50 Ohms.
8Vcc2
Power supply voltage for the output ampli er stage. An external bypass
capacitor of 330 pF is required. This capacitor should be placed no more than
20 mils form package lead.
Pin Descriptions
HMC407MS8G / 407MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
v03.1006
Application Circuit
Note 1: Vcc1 and Vcc2 may be connected to a common Vcc.
Note 2: C2 should be located < 0.020” from Pin 8 (Vcc2).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Evaluation PCB
The circuit board used in the nal application should
use RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown. A
sufficient number of via holes should be used to con-
nect the top and bottom ground planes. The evalua-
tion board should be mounted to an appropriate heat
sink. The evaluation circuit board shown is available
from Hittite upon request.
List of Materials for Evaluation PCB 104987 [1]
Item Description
J1 - J2 PCB Mount SMA RF Connector
J3 2 mm DC Header
C1 - C3 330 pF Capacitor, 0603 Pkg.
C4 2.2 μF Capacitor, Tantalum
U1 HMC407MS8G / HMC407MS8GE Ampli er
PCB [2] 104628 Eval Board
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Roger 4350
HMC407MS8G / 407MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
v03.1006
