DMG1013TQ
Document number: DS39070 Rev. 1 - 2
1 of 6
www.diodes.com
August 2016
© Diodes Incorporated
DMG1013TQ
NEW PROD UCT
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON) Max
ID Max
TA = +25°C
-20V
700mΩ @ VGS = -4.5V
-460mA
900mΩ @ VGS = -2.5V
-420mA
1300mΩ @ VGS = -1.8V
-350mA
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 3kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
DC-DC Converters
Load Switch
Power Management Functions
Mechanical Data
Case: SOT523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.002 grams (Approximate)
Ordering Information (Note 5)
Part Number
Case
Packaging
DMG1013TQ-7
SOT523
3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
.
Marking Information
Date Code Key
Year
2016
2017
2018
2019
2020
2021
2022
2023
2024
Code
D
E
F
G
H
I
J
K
L
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT523
Top View
Equivalent Circuit
Top View
GS
D
PA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
PA1 YM
ESD PROTECTED TO 3kV
D
S
G
Gate Protection
Diode
DMG1013TQ
Document number: DS39070 Rev. 1 - 2
2 of 6
www.diodes.com
August 2016
© Diodes Incorporated
DMG1013TQ
NEW PROD UC T
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±6
V
Drain Current (Note 6) Steady
State
TA = +25°C
TA = +85°C
ID
-0.46
-0.33
A
Pulsed Drain Current (Note 7)
IDM
-6
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 6)
PD
0.27
W
Thermal Resistance, Junction to Ambient (Note 6)
RJA
461
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
-20
-
-
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
-
-
-100
nA
VDS = -20V, VGS = 0V
Gate-Source Leakage
IGSS
-
-
±2.0
µA
VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
-0.5
-
-1.0
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS(ON)
-
0.5
0.7
Ω
VGS = -4.5V, ID = -350mA
0.7
0.9
VGS = -2.5V, ID = -300mA
1.0
1.3
VGS = -1.8V, ID = -150mA
Forward Transfer Admittance
|Yfs|
-
0.9
-
S
VDS = -10V, ID = -250mA
Diode Forward Voltage
VSD
-0.8
-1.2
V
VGS = 0V, IS = -150mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
-
59.76
-
pF
VDS = -16V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
-
12.07
-
pF
Reverse Transfer Capacitance
Crss
-
6.36
-
pF
Total Gate Charge
Qg
-
580
-
pC
VGS = -4.5V, VDS = -10V,
ID = -250mA
Gate-Source Charge
Qgs
-
104
-
pC
Gate-Drain Charge
Qgd
-
125
-
pC
Turn-On Delay Time
tD(ON)
-
5.1
-
ns
VDD = -10V, VGS = -4.5V,
RL = 47Ω, Rg = 10Ω,
ID = -200mA
Turn-On Rise Time
tR
-
8.1
-
ns
Turn-Off Delay Time
tD(OFF)
-
28.4
-
ns
Turn-Off Fall Time
tF
-
20.7
-
ns
Notes: 6. For a device surface mounted on a minimum recommended pad layout of an FR-4 PCB, in still air conditions; the device is measured when operating in
steady-state condition.
7. Same as note 5, except the device is pulsed at duty cycle of 1% for a pulse width of 10µs.
8. Measured under pulsed conditions to minimize self-heating effect. Pulse width 300µs; duty cycle 2%.
9. For design aid only, not subject to production testing.
DMG1013TQ
Document number: DS39070 Rev. 1 - 2
3 of 6
www.diodes.com
August 2016
© Diodes Incorporated
DMG1013TQ
NEW PROD UC T
0
0.3
0.6
0.9
1.2
1.5
0 1 2 3 4 5
Fig. 1 Typical Output Characteristic
-V , DRAIN-SOURCE VOLTAGE (V)
DS
-I , DRAIN CURRENT (A)
D
V = -1.2V
GS
V = -1.5V
GS
V = -2.0V
GS
V = -2.5V
GS
V = -3.0V
GS
V = -4.5V
GS
V = -8.0V
GS
0 0.5 1 1.5 2 2.5 3
Fig. 2 Typical Transfer Characteristic
-V , GATE-SOURCE VOLTAGE (V)
GS
0
2
4
6
8
10
-I , DRAIN CURRENT (A)
D
T = -55
癈
A
T = 25
癈
A
T = 85
癈
A
T = 125
癈
A
T = 150
癈
A
V = -5V
DS
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 0.3 0.6 0.9 1.2 1.5
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = -2.5V
GS
V = -4.5V
GS
V = -1.8V
GS
0
0.2
0.4
0.6
0.8
1.0
0 0.3 0.6 0.9 1.2 1.5
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
-I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
T = -55
癈
A
T = 25
癈
A
T = 85
癈
A
T = 125
癈
A
T = 150
癈
A
V = -4.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (
癈
)
A
0.5
0.7
0.9
1.1
1.3
1.5
1.7
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DSON
V = -4.5V
I = -1.0A
GS
D
V = -2.5V
I = -500mA
GS
D
0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (
癈
)
A
R , DRAIN-SOURCE
ON-RESISTANCE ( )
DSON
V = -4.5V
I = -1.0A
GS
D
V = -2.5V
I = -500mA
GS
D
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
(°C)
(°C)
DMG1013TQ
Document number: DS39070 Rev. 1 - 2
4 of 6
www.diodes.com
August 2016
© Diodes Incorporated
DMG1013TQ
NEW PROD UC T
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (
癈
)
A
0
0.4
0.8
1.2
1.6
-V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = -1mA
D
I = -250
礎
D
0.2 0.4 0.6 0.8 1.0 1.2
Fig. 8 Diode Forward Voltage vs. Current
-V , SOURCE-DRAIN VOLTAGE (V)
SD
0
2
4
6
8
10
-I , SOURCE CURRENT (A)
S
T = 25
癈
A
1
10
100
0 5 10 15 20
Fig. 9 Typical Total Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)
DS
C, CAPACITANCE (pF)
Ciss
Crss
Coss
f = 1MHz
0
1
2
3
4
5
6
0 0.2 0.4 0.6 0.8 1.0
Q , TOTAL GATE CHARGE (nC)
Fig. 10 Gate-Charge Characteristics
g
-V , GATE-SOURCE VOLTAGE (V)
GS
0.00001 0.001 0.01 0.1 1 10 100 1,000
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.0001
0.001
0.01
0.1
1
r(t), TRANSIENT THERMAL RESISTANCE
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
12
R (t) = r(t) *
JA R
R = 504
癈
/W
JA
JA
P(pk) t1
t2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
A
(°C)
°C
°C/W
DMG1013TQ
Document number: DS39070 Rev. 1 - 2
5 of 6
www.diodes.com
August 2016
© Diodes Incorporated
DMG1013TQ
NEW PROD UC T
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT523
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT523
SOT523
Dim
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
C
1.45
1.75
1.60
D
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50
0°
8°
All Dimensions in mm
Dimensions
Value (in mm)
Z
1.8
X
0.4
Y
0.51
C
1.3
E
0.7
XE
Y
C
Z
A
M
JL
D
BC
H
K
G
N
DMG1013TQ
Document number: DS39070 Rev. 1 - 2
6 of 6
www.diodes.com
August 2016
© Diodes Incorporated
DMG1013TQ
NEW PROD UC T
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
www.diodes.com
