Type
BSZ16DN25NS3 G
OptiMOSTM3 Power-Transistor
Features
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Low on-resistance RDS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDTC=25 °C 10.9 A
TC=100 °C 7.7
Pulsed drain current2) ID,pulse TC=25 °C 44
Avalanche energy, single pulse
EAS ID=5.5 A, RGS=25 W120 mJ
Reverse diode dv/dtdv/dt10 kV/µs
Gate source voltage
VGS ±20 V
Power dissipation
Ptot TC=25 °C 62.5 W
Operating and storage temperature
Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
1)J-STD20 and JESD22
2) see figure 3
VDS
250
V
RDS(on),max
165
mW
ID
A
Product Summary
Type
Package
Marking
BSZ16DN25NS3 G
PG-TSDSON-8
16DN25N
PG-TSDSON-8
Rev. 2.2 page 1 2011-07-14
BSZ16DN25NS3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
RthJC - - 2 K/W
RthJA 6 cm2 cooling area3) - - 60
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS=0 V, ID=1 mA 250 - - V
Gate threshold voltage
VGS(th) VDS=VGS, ID=32 µA 2 3 4
Zero gate voltage drain current
IDSS
VDS=200 V, VGS=0 V,
Tj=25 °C
-0.1 1µA
VDS=200 V, VGS=0 V,
Tj=125 °C
-10 100
Gate-source leakage current
IGSS VGS=20 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance
RDS(on) VGS=10 V, ID=5.5 A -146 165 mW
Gate resistance
RG-2.1 -W
Transconductance
gfs
|VDS|>2|ID|RDS(on)max,
ID=5.5 A
714 - S
Values
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Thermal resistance,
junction - ambient
Rev. 2.2 page 2 2011-07-14
BSZ16DN25NS3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -690 920 pF
Output capacitance
Coss -44 59
Reverse transfer capacitance
Crss -5.2 -
Turn-on delay time
td(on) - 6 - ns
Rise time
tr- 4 -
Turn-off delay time
td(off) -11 -
Fall time
tf- 4 -
Gate Charge Characteristics4)
Gate to source charge
Qgs -3.0 -nC
Gate to drain charge
Qgd -1.2 -
Switching charge
Qsw -2.1 -
Gate charge total
Qg-8.6 11.4
Gate plateau voltage
Vplateau -4.3 - V
Output charge
Qoss VDD=100 V, VGS=0 V -16 22 nC
Reverse Diode
Diode continous forward current IS- - 10.9 A
Diode pulse current
IS,pulse - - 44
Diode forward voltage
VSD
VGS=0 V, IF=10.9 A,
Tj=25 °C
-0.9 1.2 V
Reverse recovery time
trr -103 -ns
Reverse recovery charge
Qrr -337 -nC
4) See figure 16 for gate charge parameter definition
VR=100 V, IF=IS,
diF/dt=100 A/µs
TC=25 °C
Values
VGS=0 V, VDS=100 V,
f=1 MHz
VDD=100 V,
VGS=10 V, ID=5.5 A,
RG=1.6 W
VDD=99 V, ID=5.5 A,
VGS=0 to 10 V
Rev. 2.2 page 3 2011-07-14
BSZ16DN25NS3 G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5
10-4
10-3
10-2
10-1
100
10-1
100
101
ZthJC [K/W]
tp[s]
0
10
20
30
40
50
60
70
040 80 120 160
Ptot [W]
TC[°C]
0
2
4
6
8
10
12
040 80 120 160
ID[A]
TC[°C]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-1
100
101
102
103
10-1
100
101
102
ID[A]
VDS [V]
Rev. 2.2 page 4 2011-07-14
BSZ16DN25NS3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
5 V
5.5 V
6 V
8 V
10 V
0
40
80
120
160
200
240
0 4 8 12 16
RDS(on) [mW]
ID[A]
25 °C
150 °C
0
5
10
15
20
25
0 2 4 6 8
ID[A]
VGS [V]
0
4
8
12
16
20
24
0 4 8 12 16
gfs [S]
ID[A]
4.5 V
5 V
5.5 V
6 V
7 V
10 V
0
5
10
15
20
25
0 1 2 3 4 5
ID[A]
VDS [V]
Rev. 2.2 page 5 2011-07-14
BSZ16DN25NS3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=5.5 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
0
50
100
150
200
250
300
350
400
450
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj[°C]
32 µA
320 µA
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
Ciss
Coss
Crss
100
101
102
103
040 80 120 160 200
C[pF]
VDS [V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
0.1
1
10
100
0 0.5 1 1.5 2
IF[A]
VSD [V]
Rev. 2.2 page 6 2011-07-14
BSZ16DN25NS3 G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=5.5 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
50 V
125 V
200 V
0
2
4
6
8
10
0 1 2 3 4 5 6 7 8 9 10
VGS [V]
Qgate [nC]
230
240
250
260
270
280
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj[°C]
VGS
Qgate
Vgs(th)
Qg(th)
Qgs
Qgd
Qsw
Qg
25 °C
100 °C
125 °C
0.1
1
10
110 100 1000
IAS [A]
tAV [µs]
Rev. 2.2 page 7 2011-07-14
BSZ16DN25NS3 G
Package Outline:PG-TSDSON-8
Rev. 2.2 page 8 2011-07-14
BSZ16DN25NS3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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Rev. 2.2 page 9 2011-07-14