SILICON EPIBASE NPN DARLINGTON TRANSISTOR BDS20SMD * High DC Current Gain * Hermetic Ceramic Surface Mount Package * Designed For General Purpose Amplifiers and Low Speed Switching Applications * Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Base Current TC = 25C Total Power Dissipation at Derate Above 25C Junction Temperature Range Storage Temperature Range 80V 80V 5V 5A 0.1A 35W 0.2W/C -65 to +200C -65 to +200C THERMAL PROPERTIES Symbols Parameters RJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 5 C/W ** This datasheet supersedes document 7603 Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8217 Issue 1 Page 1 of 2 SILICON EPIBASE NPN DARLINGTON TRANSISTOR BDS20SMD ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Symbols ICBO Parameters Test Conditions Collector-Cut-Off Current VCB = 80V IE = 0 VCB = 60V IE = 0 Min. Typ Max. 0.2 1.0 TC = 150C ICEO Collector-Cut-Off Current VCE = 40V IB = 0 0.5 IEBO Emitter-Cut-Off Current VEB = 5V IC = 0 2 IC = 0.5A VCE = 3V 1000 IC = 3A VCE = 3V 1000 IC = 3A IB = 12mA 2 IC = 5A IB = 20mA 4 Base-Emitter Saturation Voltage IC = 5A IB = 20mA 2.8 Base-Emitter On Voltage IC = 3A VCE = 3V 3.5 IC = 0.5A VCE = 4V hFE Forward-current transfer ratio (1) (1) VCE(sat) VBE(sat) VBE(on) (1) (1) Collector-Emitter Saturation Voltage Units mA V DYNAMIC CHARACTERISTICS Transition Frequency Notes (1) Pulse Width 300us, 2% MHz 0.89 (0.035) min. MECHANICAL DATA 3.70 (0.146) 3.41 (0.134) Pad 2 - Collector 4.14 (0.163) 3.84 (0.151) 3.60 (0.142) Max. 3 2 9.67 (0.381) 9.38 (0.369) SMD1 (TO-276AB) Underside View 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. Dimensions in mm (inches) Pad 1 - Base 8 f = 2MHz 11.58 (0.456) 11.28 (0.444) 16.02 (0.631) 15.73 (0.619) fT 0.50 (0.020) 0.26 (0.010) Pad 3 - Emitter Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8217 Issue 1 Page 2 of 2