SILICON EPIBASE NPN
DARLINGTON TRANSISTOR
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8217
Issue 1
Page 1 of 2
BDS20SMD
• High DC Current Gain
• Hermetic Ceramic Surface Mount Package
• Designed For General Purpose Amplifiers and
Low Speed Switching Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage 80V
VCEO Collector – Emitter Voltage 80V
VEBO Emitter – Base Voltage 5V
IC Continuous Collector Current 5A
IB Base Current 0.1A
PD Total Power Dissipation at TC = 25°C 35W
Derate Above 25°C 0.2W/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Min. Typ. Max. Units
RθJC Thermal Resistance, Junction To Case 5 °C/W
** This datasheet supersedes document 7603
SILICON EPIBASE NPN
DARLINGTON TRANSISTOR
BDS20SMD
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8217
Issue 1
Page 2 of 2
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
VCB = 80V IE = 0 0.2
VCB = 60V IE = 0
ICBO Collector-Cut-Off Current
TC = 150°C 1.0
ICEO Collector-Cut-Off Current VCE = 40V IB = 0 0.5
IEBO Emitter-Cut-Off Current VEB = 5V IC = 0 2
mA
IC = 0.5A VCE = 3V 1000
hFE
(1)
Forward-current transfer
ratio IC = 3A VCE = 3V 1000
IC = 3A IB = 12mA 2
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage IC = 5A IB = 20mA 4
VBE(sat)
(1)
Base-Emitter Saturation
Voltage IC = 5A IB = 20mA 2.8
VBE(on)
(1)
Base-Emitter On Voltage IC = 3A VCE = 3V 3.5
V
DYNAMIC CHARACTERISTICS
IC = 0.5A VCE = 4V
fT Transition Frequency
f = 2MHz
8 MHz
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
MECHANICAL DATA
Dimensions in mm (inches)
3.60 (0.142)
Max.
3.70 (0.146)
3.41 (0.134)
3.70 (0.146)
3.41 (0.134)
0.89
(0.035)
min.
4.14 (0.163)
3.84 (0.151)
10.69 (0.421)
10.39 (0.409)
9.67 (0.381)
9.38 (0.369)
11.58 (0.456)
11.28 (0.444)
16.02 (0.631)
15.73 (0.619)
0.50 (0.020)
0.26 (0.010)
0.76
(0.030)
min.
1 3
2
SMD1 (TO
-
276AB)
Underside View
Pad 1 – Base Pad 2 – Collector Pad 3 - Emitter
