AP25P15GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D Simple Drive Requirement BVDSS -140V RDS(ON) 95m ID Fast Switching Characteristic G -23A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications. G D TO-220CFM(I) S Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage -140 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current, VGS @ 10V -23 A ID@TC=100 Continuous Drain Current, VGS @ 10V -14.5 A 1 IDM Pulsed Drain Current -80 A PD@TC=25 Total Power Dissipation 36.7 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 3.4 /W 65 /W 1 200810071 AP25P15GI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units -140 - - V BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-12A - - 95 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-12A - 35 - S IDSS Drain-Source Leakage Current VDS=-120V, VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS= +20V - - +100 nA ID=-18A - 55 90 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-80V - 9 - nC Qgd Gate-Drain ("Miller") Charge VGS=-10V - 17 - nC VDS=-50V - 13 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-18A - 34 - ns td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 84 - ns tf Fall Time RD=2.8 - 78 - ns Ciss Input Capacitance VGS=0V - 5180 8300 pF Coss Output Capacitance VDS=-25V - 250 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 140 - pF Rg Gate Resistance f=1.0MHz - 3.2 4.8 Min. Typ. IS=-12A, VGS=0V - - -1.3 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-18A, VGS=0V, - 70 - ns Qrr Reverse Recovery Charge dI/dt=-100A/s - 235 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP25P15GI 50 80 -ID , Drain Current (A) 60 40 -10V -7.0V -6.0V -5.0V V G = -4.0V T C =150 o C 40 -ID , Drain Current (A) -10V - 7 .0V - 6 .0V - 5.0 V V G = - 4 .0 V T C = 25 o C 30 20 20 10 0 0 0 4 8 12 16 20 24 0 Fig 1. Typical Output Characteristics 12 16 2.4 I D = - 12 A V G = -10V I D = -12 A T C =25 2.0 Normalized RDS(ON) 86 RDS(ON) (m ) 8 Fig 2. Typical Output Characteristics 90 82 78 1.6 1.2 0.8 74 0.4 70 2 4 6 8 -50 10 0 50 100 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 10 1.2 Normalized -VGS(th) (V) 12 8 -IS(A) 4 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) T j =150 o C 6 T j =25 o C 4 2 150 1.0 0.8 0.6 0.4 0 0.2 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP25P15GI f=1.0MHz V DS = - 80 V I D = - 18 A 12 C iss 1000 C (pF) -VGS , Gate to Source Voltage (V) 15 9 C oss C rss 6 3 10 0 0 20 40 60 1 80 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthjc) 1 100us 10 -ID (A) 1ms 10ms 100ms 1s 1 T c =25 o C Single Pulse DC Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 Single Pulse 0.01 0 0.1 1 10 100 1000 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG 90% QG -10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4