MBRF16H45 - Vishay Siliconix

Reverse Voltage 35 to 60 V

Forward Current 16 A

New Product

0.08

(2.032)

0.24

(6.096)

0.42

(10.66)

0.63

(17.02)

0.12

(3.05)

0.33

(8.38)

Mounting Pad Layout TO-263AB

0.380 (9.65)

0.411 (10.45)

0.320 (8.13)

0.360 (9.14)

0.591 (15.00)

0.624 (15.85)

0.245 (6.22)

MIN

0.027 (0.686)

0.037 (0.940)

0.105 (2.67)

0.095 (2.41) 0.205 (5.20)

0.195 (4.95)

0.160 (4.06)

0.190 (4.83)

0.045 (1.14)

0.055 (1.40)

0.021 (0.53)

0.014 (0.36)

0.110 (2.79)

0.140 (3.56)

0.090 (2.29)

0.110 (2.79)

0.047 (1.19)

0.055 (1.40)

PIN 1

PIN 2 K - HEATSINK

0-0.01 (0-0.254)

0.060 (1.52)

0.405 (10.27)

0.383 (9.72)

0.191 (4.85)

0.171 (4.35)

0.600 (15.5)

0.580 (14.5)

0.560 (14.22)

0.530 (13.46)

0.037 (0.94)

0.027 (0.69)

0.140 (3.56)

0.130 (3.30)

0.350 (8.89)

0.330 (8.38)

0.188 (4.77)

0.172 (4.36)

0.110 (2.80)

0.100 (2.54)

0.131 (3.39)

0.122 (3.08)

0.110 (2.80)

0.100 (2.54)

0.022 (0.55)

0.014 (0.36)

0.205 (5.20)

0.195 (4.95)

DIA.

PIN 1

PIN 2

0.676 (17.2)

0.646 (16.4)

ITO-220AC (MBRF16Hxx)

TO-220AC (MBR16Hxx)

Dimensions in inches

and (millimeters)

TO-263AB (MBRB16Hxx)

0.154 (3.91)

0.148 (3.74) DIA.

0.113 (2.87)

0.103 (2.62)

0.185 (4.70)

0.175 (4.44)

0.055 (1.39)

0.045 (1.14)

0.145 (3.68)

0.135 (3.43)

0.350 (8.89)

0.330 (8.38)

0.160 (4.06)

0.140 (3.56)

0.037 (0.94)

0.027 (0.68)

0.205 (5.20)

0.195 (4.95)

0.560 (14.22)

0.530 (13.46)

0.022 (0.56)

0.014 (0.36)

0.110 (2.79)

0.100 (2.54)

12 1.148 (29.16)

1.118 (28.40)

0.105 (2.67)

0.095 (2.41)

0.410 (10.41)

0.390 (9.91) 0.635 (16.13)

0.625 (15.87)

0.603 (15.32)

0.573 (14.55)

0.415 (10.54) MAX.

PIN 1

PIN 2 CASE

0.370 (9.40)

0.360 (9.14)

Mechanical Data

Case: JEDEC T O-220A C, ITO-220A C & T O-263AB molded

plastic body

Terminals: Plated leads, solderable per

MIL-STD-750, Method 2026

Polarity: As marked

Mounting Position: Any

Mounting Torque: 10 in-lbs maximum

Weight: 0.08 oz., 2.24 g

Features

• Plastic package has Underwriters Laboratory

Flammability Classification 94 V-0

• Metal silicon junction, majority carr ier conduction

• Low forward voltage drop, low power loss

and high efficiency

• Guardring for overvoltage protection

• For use in low voltage, high frequency inver ters, free

wheeling, and polarity protection applications

• High temperature soldering guaranteed:

250 °C/10 seconds, 0.25" (6.35 mm) from case

• Rated for reverse surge and ESD

• 175 °C maximum operation junction temperature

MBR16Hxx, MBRF16Hxx & MBRB16Hxx Series

Vishay Semiconductors

for merly General Semiconductor

Document Number 88784 www.vishay.com

03-Mar-03 1

Schottky Barrier Rectifiers

MBR16Hxx, MBRF16Hxx & MBRB16Hxx Series

Vishay Semiconductors

for merly General Semiconductor

www.vishay.com Document Number 88784

203-Mar-03

Maximum Ratings (TC= 25 °C unless otherwise noted)

Parameter Symbol MBR16H35 MBR16H45 MBR16H50 MBR16H60 Unit

Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V

Wor king peak reverse voltage VRWM 35 45 50 60 V

Maximum DC blocking voltage VDC 35 45 50 60 V

Max.average forward rectified current (see fig. 1) IF(AV) 16 A

Peak repetitive forward current at TC= 150 °C

(rated VR, 20 KHz sq. wave) IFRM 32 A

Non-repetitive avalanche energy

at 25 °C, I AS = 4 A, L = 10 mH EAS 80 mJ

Peak forward surge current 8.3 ms single half sine-wave IFSM 150 A

superimposed on rated load (JEDEC Method)

Peak repetitive reverse surge current

at tp= 2.0 µs, 1 KHZIRRM 1.0 0.5 A

Peak non-repetitive reverse energy (8/20 µs wavefor m) ERSM 20 mJ

Electrostatic discharge capacitor voltage VC25 kV

Human body model: C = 100 pF, R = 1.5 kΩ

Voltage rate of change (rated VR) dv/dt 10,000 V/µs

Operating junction temperature range TJ– 65 to +175 °C

Storage temperature range TSTG –65 to +175 °C

RMS Isolation voltage (MBRF type only) from terminals 4500(1)

to heatsink with t = 1.0 second, RH ≤30% VISOL 3500(2) V

1500(3)

Electrical Characteristics(TC= 25 °C unless otherwise noted)

Parameter Symbol MBR16H35, MBR16H45 MBR16H50, MBR16H60 Unit

Typ Max Typ Max

Maximum instantaneous at IF = 16 A TJ = 25 °C – 0.66 – 0.73

forward voltage(4) at IF = 16 A TJ = 125 °C VF0.52 0.56 0.58 0.62 V

Maximum instantaneous reverse current TJ = 25 °C – 100 – 100 µA

at rated DC blocking voltage(4) TJ =125 °C IR6.0 20 4.0 20 mA

Thermal Characteristics(TC= 25°C unless otherwise noted)

Parameter Symbol MBR MBRF MBRB Unit

Typical thermal resistance from junction to case RθJC 1.5 3.0 1.5 °C/W

Notes:

(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (3) Screw mounting with 4-40 screw, where washer diameter is ≤4.9 mm (0.19”)

(2) Clip mounting (on case), where leads do overlap heatsink (4) Pulse test: 300 µs pulse width, 1% duty cycle

Ordering Information

Product Case Package Code Package Option

MBR16H35 – MBR16H60 TO-220AC 45 Anti-Static tube, 50/tube, 2K/carton

MBRF16H35 – MBRF16H60 ITO-220AC 45 Anti-Static tube, 50/tube, 2K/carton

31 13” reel, 800/reel, 4.8K/car ton

MBRB16H35 – MBRB16H60 TO-263AB 45 Anti-Static tube, 50/tube, 2K/carton

81 Anti-Static 13” reel, 800/reel, 4.8K/car ton

MBR16Hxx, MBRF16Hxx & MBRB16Hxx Series

Vishay Semiconductors

for merly General Semiconductor

Document Number 88784 www.vishay.com

03-Mar-03 3

Ratings and

Characteristic Curves(TA= 25°C unless otherwise noted)

1 10 100

100

125

150

Fig. 3 – Typical Instantaneous

Forward Characteristics

Fig. 5 – Typical Junction

Capacitance Fig. 6 – Typical Transient

Thermal Impedance

Number of Cycles at 60 HZ

Reverse Voltage (V)

Peak Forward Surge Current (A)

025

50 75 100 125 150 175

Fig. 1 – Forward Current

Derating Curve

Average Forward Current (A)

Case Temperature (°C)

Fig. 2 – Maximum Non-Repetitive

Peak Forward Surge Current

0.01

0.1

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

100

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

Fig. 4 – Typical Reverse

Characteristics

Instantaneous Reverse Leakage Current

(mA)

Percent of Rated Peak Reverse Voltage (%)

t, Pulse Duration (sec.)

Transeint Thermal Impedance (°C/W)

pF - Junction Capacitance

020 6040 10080

0.0001

0.001

0.1

0.01

100

0.1 1

100 10

1000

100

10000

0.01 0.1

0.1 1

MBR16H35 -- MBR16H45

MBR16H50 -- MBR16H60

MBR16H35 -- MBR16H45

MBR16H50 -- MBR16H60

MBR16H35 -- MBR16H45

MBR16H50 -- MBR16H60

TJ = 150°C

TJ = 125°C

TJ = 25°C

TJ = TJ max.

8.3ms Single Half Sine-Wave

(JEDEC Method)

TJ = 25°C

f = 1.0 MHZ

Vsig = 50mVp-p

TJ = 150°C

TJ = 125°C

TJ = 25°C

MBRF

MBR, MBRB