MBR16Hxx, MBRF16Hxx & MBRB16Hxx Series Vishay Semiconductors New Product formerly General Semiconductor Schottky Barrier Rectifiers Reverse Voltage 35 to 60 V Forward Current 16 A ITO-220AC (MBRF16Hxx) 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) TO-220AC (MBR16Hxx) 0.110 (2.80) 0.100 (2.54) 0.185 (4.70) 0.415 (10.54) MAX. 0.175 (4.44) 0.154 (3.91) 0.370 (9.40) 0.360 (9.14) 0.148 (3.74) DIA. 0.113 (2.87) 0.103 (2.62) 0.410 (10.41) 0.390 (9.91) 0.350 (8.89) 0.330 (8.38) 0.635 (16.13) 0.625 (15.87) 0.676 (17.2) 0.646 (16.4) 0.600 (15.5) 0.580 (14.5) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 0.603 (15.32) 0.573 (14.55) PIN 1 2 0.191 (4.85) 0.171 (4.35) PIN 1 2 1.148 (29.16) 1.118 (28.40) 0.160 (4.06) 0.140 (3.56) 0.131 (3.39) DIA. 0.122 (3.08) 0.140 (3.56) DIA. 0.130 (3.30) 0.055 (1.39) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.110 (2.80) 0.100 (2.54) 0.060 (1.52) PIN 1 0.560 (14.22) 0.530 (13.46) PIN 1 PIN 2 CASE PIN 2 0.205 (5.20) 0.195 (4.95) 0.105 (2.67) 0.037 (0.94) 0.027 (0.68) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) 0.037 (0.94) 0.027 (0.69) 0.022 (0.56) 0.014 (0.36) Mounting Pad Layout TO-263AB TO-263AB (MBRB16Hxx) 0.42 (10.66) 0.190 (4.83) 0.411 (10.45) 0.380 (9.65) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) 0.33 (8.38) 0.245 (6.22) MIN K Dimensions in inches and (millimeters) 0.63 (17.02) 0.055 (1.40) 0.360 (9.14) 0.320 (8.13) 0.047 (1.19) 1 K 0.624 (15.85) 0.591 (15.00) 2 0.08 (2.032) 0-0.01 (0-0.254) 0.110 (2.79) 0.24 (6.096) 0.090 (2.29) 0.027 (0.686) 0.037 (0.940) 0.105 (2.67) 0.095 (2.41) 0.022 (0.55) 0.014 (0.36) 0.021 (0.53) 0.014 (0.36) PIN 1 PIN 2 0.205 (5.20) K - HEATSINK 0.140 (3.56) 0.110 (2.79) 0.195 (4.95) Mechanical Data Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08 oz., 2.24 g Document Number 88784 03-Mar-03 0.12 (3.05) Features * Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 * Metal silicon junction, majority carrier conduction * Low forward voltage drop, low power loss and high efficiency * Guardring for overvoltage protection * For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications * High temperature soldering guaranteed: 250 C/10 seconds, 0.25" (6.35 mm) from case * Rated for reverse surge and ESD * 175 C maximum operation junction temperature www.vishay.com 1 MBR16Hxx, MBRF16Hxx & MBRB16Hxx Series Vishay Semiconductors formerly General Semiconductor Maximum Ratings (TC = 25 C unless otherwise noted) Parameter Symbol MBR16H35 MBR16H45 MBR16H50 MBR16H60 Unit Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V Working peak reverse voltage VRWM 35 45 50 60 V Maximum DC blocking voltage VDC 35 45 50 60 V Max. average forward rectified current (see fig. 1) IF(AV) 16 A Peak repetitive forward current at TC = 150 C (rated VR, 20 KHz sq. wave) IFRM 32 A Non-repetitive avalanche energy at 25 C, IAS = 4 A, L = 10 mH EAS 80 mJ Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 A Peak repetitive reverse surge current at tp = 2.0 s, 1 KHZ IRRM Peak non-repetitive reverse energy (8/20 s waveform) ERSM 20 mJ VC 25 kV dv/dt 10,000 V/s TJ -65 to +175 C TSTG -65 to +175 C Electrostatic discharge capacitor voltage Human body model: C = 100 pF, R = 1.5 k Voltage rate of change (rated VR) Operating junction temperature range Storage temperature range 1.0 0.5 A (1) RMS Isolation voltage (MBRF type only) from terminals to heatsink with t = 1.0 second, RH 30% 4500 3500(2) 1500(3) VISOL V Electrical Characteristics (TC = 25 C unless otherwise noted) Parameter Maximum instantaneous forward voltage(4) Symbol at IF = 16 A at IF = 16 A Maximum instantaneous reverse current at rated DC blocking voltage(4) MBR16H35, MBR16H45 MBR16H50, MBR16H60 Typ Max Typ Max Unit TJ = 25 C TJ = 125 C VF - 0.52 0.66 0.56 - 0.58 0.73 0.62 V TJ = 25 C TJ =125 C IR - 6.0 100 20 - 4.0 100 20 A mA Thermal Characteristics (TC = 25C unless otherwise noted) Parameter Symbol MBR MBRF MBRB Unit Typical thermal resistance from junction to case RJC 1.5 3.0 1.5 C/W Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110" offset (2) Clip mounting (on case), where leads do overlap heatsink (3) Screw mounting with 4-40 screw, where washer diameter is 4.9 mm (0.19") (4) Pulse test: 300 s pulse width, 1% duty cycle Ordering Information Product Case Package Code MBR16H35 - MBR16H60 TO-220AC 45 MBRF16H35 - MBRF16H60 ITO-220AC 45 Anti-Static tube, 50/tube, 2K/carton TO-263AB 31 45 81 13" reel, 800/reel, 4.8K/carton Anti-Static tube, 50/tube, 2K/carton Anti-Static 13" reel, 800/reel, 4.8K/carton MBRB16H35 - MBRB16H60 www.vishay.com 2 Package Option Anti-Static tube, 50/tube, 2K/carton Document Number 88784 03-Mar-03 MBR16Hxx, MBRF16Hxx & MBRB16Hxx Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 1 - Forward Current Derating Curve 20 Average Forward Current (A) MBR, MBRB 15 MBRF 10 5 Peak Forward Surge Current (A) 150 125 100 75 50 25 0 0 25 75 50 100 125 150 175 10 100 Case Temperature (C) Number of Cycles at 60 HZ Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Characteristics 100 Instantaneous Forward Current (A) 1 TJ = 150C 10 TJ = 25C 1 TJ = 125C 0.1 Instantaneous Reverse Leakage Current (mA) 0 100 10 TJ = 150C 1 TJ = 125C 0.1 0.01 MBR16H35 -- MBR16H45 MBR16H50 -- MBR16H60 0.001 MBR16H35 -- MBR16H45 MBR16H50 -- MBR16H60 0.01 0.1 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 TJ = 25C 0.0001 0 1.0 20 40 60 80 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance 1000 MBR16H35 -- MBR16H45 MBR16H50 -- MBR16H60 100 0.1 1 10 Reverse Voltage (V) Document Number 88784 03-Mar-03 100 10 TJ = 25C f = 1.0 MHZ Vsig = 50mVp-p Transeint Thermal Impedance (C/W) 10000 pF - Junction Capacitance TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) 100 1 0.1 0.01 0.1 1 10 t, Pulse Duration (sec.) www.vishay.com 3