Features
Center gate
Hermetic metal case with ceramic insulator
(Glass-metal seal over 1200V)
International standard case TO-209AC (TO-94)
Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
IT(AV) 110 A
@ TC90 °C
IT(RMS) 175 A
ITSM @ 50Hz 2700 A
@ 60Hz 2830 A
I2t@
50Hz 36.4 KA2s
@ 60Hz 33.2 KA2s
VDRM/VRRM 400 to 1600 V
tqtypical 100 µs
TJ- 40 to 125 °C
Parameters ST110S Units
Major Ratings and Characteristics
case style
TO-209AC (TO-94)
110A
PHASE CONTROL THYRISTORS Stud Version
ST110S SERIES
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Bulletin I25167 rev. C 03/03
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ST110S Series
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Bulletin I25167 rev. C 03/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V DRM/VRRM, max. repetitive VRSM , maximum non- I DRM/IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max
VVmA
04 400 500
ST110S 08 800 900 20
12 1200 1300
16 1600 1700
IT(AV) Max. average on-state current 110 A 180° conduction, half sine wave
@ Case temperature 90 °C
IT(RMS) Max. RMS on-state current 175 A DC @ 85°C case temperature
ITSM Max. peak, one-cycle 2700 t = 10ms No voltage
non-repetitive surge current 2830 t = 8.3ms reapplied
2270 t = 10ms 100% VRRM
2380 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 36.4 t = 10ms No voltage Initial TJ = TJ max.
33.2 t = 8.3ms reapplied
25.8 t = 10ms 100% VRRM
23.5 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 364 KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
voltage
VT(TO)2High level value of threshold
voltage
rt1 Low level value of on-state
slope resistance
rt2 High level value of on-state
slope resistance
VTM Max. on-state voltage 1.52 V Ipk= 350A, TJ = TJ max, tp = 10ms sine pulse
IHMaximum holding current 600
ILTypical latching current 1000
0.90 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
1.79 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
1.81 (I > π x IT(AV)),TJ = TJ max.
Parameter ST110S Units Conditions
0.92 (I > π x IT(AV)),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mA TJ = 25 °C, anode supply 12V resistive load
A
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 100A, TJ = TJ max, di/dt = 10A/µs, VR = 50V
dv/dt = 20V/µs , Gate 0V 100Ω, tp = 500µs
Parameter ST110S Units Conditions
tdTypical delay time 2.0
Switching
tqTypical turn-off time 100 µs
500 A/µs
ST110S Series
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Bulletin I25167 rev. C 03/03
dv/dt Maximum critical rate of rise of
off-state voltage
IRRM Max. peak reverse and off-state
IDRM leakage current
Blocking
500 V/µs TJ = TJ max. linear to 80% rated VDRM
Parameter ST110S Units Conditions
20 mA TJ = TJ max, rated VDRM/VRRM applied
TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJC Max. thermal resistance,
junction to case
RthCS Max. thermal resistance,
case to heatsink
T Mounting torque, ± 10% 15.5 Non lubricated threads
(137)
14 Lubricated threads
(120)
wt Approximate weight 130 g
Parameter ST110S Units Conditions
0.195 DC operation
0.08 Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification
PGM Maximum peak gate power 5 TJ = TJ max, tp ≤ 5ms
PG(AV) Maximum average gate power 1 TJ = TJ max, f = 50Hz, d% = 50
IGM Max. peak positive gate current 2.0 A TJ = TJ max, tp ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT DC gate current required TJ = - 40°C
to trigger mA TJ = 25°C
TJ = 125°C
VGT DC gate voltage required TJ = - 40°C
to trigger V TJ = 25°C
TJ = 125°C
IGD DC gate current not to trigger 10 mA
Parameter ST110S Units Conditions
20
5.0
Triggering
VGD DC gate voltage not to trigger 0.25 V TJ = TJ max
TYP. MAX.
180 -
90 150
40 -
2.9 -
1.8 3.0
1.2 -
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
°C
K/W
Nm
(lbf-in)
Case style TO - 209AC (TO-94) See Outline Table
VT
J = TJ max, tp ≤ 5ms
ST110S Series
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Bulletin I25167 rev. C 03/03
Ordering Information Table
5
34
ST 11 0 S 16 P 0 V
7
68
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Device Code
12
180° 0.035 0.025
120° 0.041 0.042
90° 0.052 0.056 K/W TJ = TJ max.
60° 0.076 0.079
30° 0.126 0.127
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
1- Thyristor
2- Essential part number
3-0 = Converter grade
4-S = Compression bonding Stud
5- Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6- P = Stud base 1/2"-20UNF-2A threads
7- 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
8- V = Glass-metal seal (only up to 1200V)
None = Ceramic housing (over 1200V)
ST110S Series
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Bulletin I25167 rev. C 03/03
Fast-on Terminals
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
Outline Table
C.S. 0.4 mm 2
10 (0.39)
RED SHRINK
RED CATHODE
RED SILICON RUBBER
4.3 (0.17) DIA
21 (0.83)
12.5 (0. 49) M AX.
157 (6. 18)
170 (6.69)
(.0006 s.i.)
8.5 (0.33) DIA.
16.5 (0.65) MAX.
MAX.
70 (2.75) MIN.
CERAMIC HOUSING
22.5 (0.88) MAX. DIA.
29 (1.14) MAX.
SW 27
C.S. 16mm 2
FLEXIBLE LEAD
(.025 s.i.)
2.6 (0.10) MAX.
WHITE SHRINK
20 (0.79) MIN.
29.5 (1.16)
MAX.
1/2"-20UNF-2A
9.5 (0.37) MIN.
WHITE GATE
215 (8.46)
C.S. 0.4 mm2
215 (8.46) 10 (0.39)
WHITE SHRINK
RED SHRINK
RED CATHODE
RED SILICON RUBBER
4.3 (0.17) DIA
21 (0.83)
12.5 (0.49) MAX.
157 (6. 1 8)
170 (6.69)
(.0006 s.i.)
GLASS METAL SEAL
8.5 (0.33) DIA.
16.5 (0.65) MAX.
23.5 (0.93) MAX. DIA.
MAX.
29 (1. 14) MAX.
70 (2.75) MIN.
C.S. 16mm 2
FLEXIBLE LEAD
(.025 s.i.)
2.6 (0.10) MAX.
20 (0.79) MIN.
29.5 (1.16) MAX.
1/2"-20UNF-2A
SW 27
9.5 (0.37) MIN.
WHITE GATE
AMP. 280000-1
REF-250
ST110S Series
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Bulletin I25167 rev. C 03/03
Fig. 4 - On-state Power Loss Characteristics
80
90
100
110
120
130
0 20406080100120
Maxi mu m A l lo wable Case Temperatur e ( ° C)
30° 60° 90° 120° 180°
Average On -state Cu rrent (A )
Conduction Angle
ST110S Series
R (DC) = 0.195 K/W
thJC
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
80
90
100
110
120
130
0 20 40 60 80 100 120 140 160 180
DC
30°
60°
90°120° 180°
A v erage O n-state Cu rrent (A )
Max imum A llowable Case Temperatur e (°C)
Conduction Perio d
ST110S Series
R (DC) = 1.9 5 K/W
thJC
25 50 75 100 125
Maxi mum All owable Ambient Temperature ( ° C )
R = 0.1 K/W - Delta R
thS
A
0.2 K/W
0.3 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1 K/W
0.5 K/W
1.2 K/W
0
20
40
60
80
100
120
140
160
180
200
220
0 20 40 60 80 100 120 140 160 180
DC
180°
120°
90°
60°
30°
RMS Lim it
Condu ction Peri od
Maxi mum Av erage On - state Power Loss (W)
Average On-state Curr en t ( A)
ST110S Series
T = 125°C
J
25 50 75 100 125
Maxi mum A llowable Ambient Te mper ature (°C)
R = 0.1 K/W - Delta R
0.2 K/W
0.3 K/W
0.4 K/W
0.5 K/W
0.6 K/W
1 K/W
0.8 K/W
1.2 K/W
thSA
0
20
40
60
80
100
120
140
160
020406080100120
180°
120°
90°
60°
30°
RMS Lim it
Conduction Angle
Maxi mu m A v erage On-state Power Loss (W)
A v erage On -state Cur rent (A)
ST110S Series
T = 125°C
J
Fig. 3 - On-state Power Loss Characteristics
ST110S Series
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Bulletin I25167 rev. C 03/03
1000
1200
1400
1600
1800
2000
2200
2400
110100
Number Of Equal Amplitude H alf Cycle Current Pulses (N)
Peak H al f Sine W ave On-state Curr ent (A)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
ST110S Se ri e s
J
At An y Rate d Lo ad Condition An d With
Rated V Appli ed Following Sur ge.
RRM
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
0.01 0.1 1 10
Pul se Tr ain D uration (s)
Max i mu m Non Repetiti ve Su rge Cu r rent
Ver sus Pulse Tr ain Du rati on. Control
Of Conducti on May Not Be Mai ntai ned.
Peak Half Sine W ave On-state Cur rent (A)
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
ST110S Series
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Squ are Wave Pulse Duration ( s)
thJC
Transient Thermal Impedance Z (K/W)
ST110S Series
Steady State Valu e
R = 0 .1 95 K/W
(D C O per ation)
thJC
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 7 - On-state Voltage Drop Characteristics
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
10
100
1000
10000
0.5 1.5 2.5 3.5 4.5
Tj = 25˚C
Tj = 125˚C
ST110S Series
ST110S Series
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Bulletin I25167 rev. C 03/03
Fig. 9 - Gate Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD IGD
(b)
(a)
Tj=25 °C
Tj =125 ° C
Tj =- 40 ° C
(1) (2) (3)
Instantaneo u s Gate Cu rrent (A )
In st an tan eou s G ate V o ltage ( V)
a) Recomm e nded load li ne f o r
b) Recom m e nded load line f o r
<= 3 0 % rated di/dt : 10V, 10ohms
Frequency Li mited by PG(AV)
r ated di/dt : 2 0 V, 10 ohms; tr< =1 µs
tr< = 1 µs
(1 ) PGM = 10W , tp = 4 ms
(2 ) PGM = 20W , tp = 2 ms
(3 ) PGM = 40W , tp = 1 ms
(4) PGM = 60W, tp = 0.66ms
Device: ST110S Series
Re ctan gular gate pulse
(4)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
