BAS16
BAS16, Rev. C
BAS16
Small Signal Diode
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
2001 Fairchild Semiconductor Corporation
3
1
2
SOT-23
12
3
A6
Connection Diagram
3
12NC
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM Maximum Repetitive Reverse Voltage 85 V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
A
Tstg Storage Temperature Range -55 to +150 °C
TJ Operating Junction Temperature -55 to +150 °C
Thermal Characteristics
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD Power Dissipation 350 mW
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
Symbol
Parameter Test Conditions Min
Max
Units
VR Breakdown Voltage IR = 5.0 µA 85 V
VF Forward Voltage IF = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
715
855
1.0
1.25
mV
mV
V
V
IR Reverse Current VR = 75 V
VR = 25 V, TA = 150°C
VR = 75 V, TA = 150°C 1.0
30
50
µA
µA
µA
CT Total Capacitance VR = 0, f = 1.0 MHz 2.0 pF
trr Reverse Recovery Time IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100 Ω 6.0 ns
BAS16
BAS16, Rev. C
Small Signal Diode
(continued)
1 2 3 5 10 20 30 50 100
110
120
130
140
150
Reverse Current, I
R
[uA]
R
Ta= 2 5°CTa= 25 °C
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten ( 10) Degree C increase in Temperature
10 20 30 50 70 100
0
50
100
150
200
250
300
Reverse Voltage, V
R
[v]
Reverse Current, I
R
[nA]
225 1 2 3 5 10 20 30 50 100
250
300
350
400
450
Forward Current, I
F
[uA]
Forward Voltage, V
F
[mV]
F
F
485 Ta= 25 °C
0.1 0.2 0.3 0.5 1 2 3 5 10
450
500
550
600
650
700
Forward Current, I
F
[mA]
Forward Voltage, V
F
[mV]
F
725 Ta= 25°C
Reverse Voltage, V
R
[v]
10 20 30 50 100 200 300 500
0.6
0.8
1
1.2
1.4
Forward Current, I
F
[mA]
Forward Voltage, V
F
[V]
F
1.5 Ta= 25°C
02468101214
1
1.1
1.2
1.3
Reverse Voltage [V]
Total Capacitance, CT [pF]
Ta= 25
°
C
15
Typical Characteristics
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100 uA Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
Figure 3. Forward Voltage vs Forward Current
VF - 1.0 to 100 uA Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
Figure 5. Forward Voltage vs Forward Current
VF - 10 - 800 mA Figure 6. Total Capacitance
BAS16
BAS16, Rev. C
050100150
0
100
200
300
400
500
I - FORWARD CURRENT STEADY STATE - mA
o
D
R
A
Io - AVERAGE RECTIFIED CURRENT - mA
IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms
10 20 30 40 50 60
1
1.5
2
2.5
3
3.5
4
Reverse Current [mA]
Reverse Recovery Time, t
rr
[ns]
Ta= 25°C
0 50 100 150 200
0
100
200
300
400
500
Average Temperature, I
O
( C)
Power Dissipation, P
D
[mW]
o
DO - 35 Pkg
SOT-23 Pkg
Small Signal Diode
(continued)
T ypical Characteristics
(continued)
050100150
0
100
200
300
400
I
F(AV)
- AVERAGE RECTIFIED CURRENT - m A
Current [mA]
Ambient Temperature, T
A
[ C]
Figure 7. Reverse Recovery Time Figure 8. Average Rectified Current (I
F(AV)
)
vs Reverse Current versus Ambient Temperature (T
A
)
TRR - IR 10 mA vs 60 mA
Figrue 9. Power Derating Curve
o
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