MBR200100CTS
Mar 2012 http://www.genesicsemi.com/silicon-products/schottky-rectifiers/ Pg1 of 3
Silicon Power
Schottky Diode
Features
Package
ï‚· High Surge Capability
SOT – 227
Maximum Ratings at Tj = 125 °C, unless otherwise specified
Symbol
Conditions
Values
Unit
VRRM
100
V
VRMS
70
V
VDC
100
V
IF
TC ≤ 85 °C
200
A
Tj
-40 to 175
°C
Tstg
-40 to 175
°C
Electrical Characteristics at Tj = 125 °C, unless otherwise specified (Per Leg)
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Diode forward voltage
VF
IF = 100 A, Tj = 25 °C
0.9
0.95
V
IF = 100 A, Tj = 125 °C
0.8
Reverse current
IR
VR = 80 V, Tj = 25 °C
3.75
10
µA
VR = 80 V, Tj = 125 °C
1830
5000
Total capacitance
C
VR = 1 V, f = 1 MHz, Tj = 25 °C
4960
pF
VR = 50 V, f = 1 MHz, Tj = 25 °C
854
VR = 100 V, f = 1 MHz, Tj = 25 °C
617
Thermal Characteristics
Thermal resistance, junction - case
RthJC
1.87
°C/W
Figure 1: Typical Forward Characteristics(Per Leg)
Figure 2: Typical Reverse Characteristics(Per Leg)
VRRM
=
100 V
IF
=
200 A
Pin 2
Pin 1
Pin 4
Pin 3
MBR200100CTS
Mar 2012 http://www.genesicsemi.com/silicon-products/schottky-rectifiers/ Pg2 of 3
Figure 3: Typical Junction Capacitance vs Reverse Voltage
Characteristics(Per Leg)
Package Dimensions:
SOT-227 PACKAGE OUTLINE
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
MBR200100CTS
Mar 2012 http://www.genesicsemi.com/silicon-products/schottky-rectifiers/ Pg3 of 3
Revision History
Date
Revision
Comments
Supersedes
2012/03/12
0
Initial release
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
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injury and/or property damage.
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Authorized Distributor
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MBR200100CTS