PD - 95902 SMPS MOSFET IRFBA90N20DPbF HEXFET(R) Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 200V RDS(on) max ID 0.023 98A Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Super-220TM Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Recommended Clip Force Max. 98 71 Units A 390 650 4.3 30 6.3 -55 to + 175 W W/C V V/ns C 300 (1.6mm from case ) 20 N Thermal Resistance Parameter RJC RCS RJA Notes Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient through www.irf.com Typ. Max. Units --- 0.50 --- 0.23 --- 58 C/W are on page 8 1 09/15/04 IRFBA90N20DPbF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 --- --- 3.0 --- --- --- --- Typ. --- 0.22 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.023 VGS = 10V, ID = 59A 5.0 V VDS = VGS, ID = 250A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 41 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 160 45 75 23 160 39 77 6080 1040 150 7500 410 790 Max. Units Conditions --- S VDS = 50V, ID = 59A 240 ID = 59A 67 nC VDS = 160V 110 VGS = 10V --- VDD = 100V --- I D = 59A ns --- RG = 1.2 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 160V, = 1.0MHz --- VGS = 0V, VDS = 0V to 160V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units --- --- --- 960 59 65 mJ A mJ Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 98 --- --- showing the A G integral reverse --- --- 390 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 59A, VGS = 0V --- 220 340 nS TJ = 25C, IF = 59A --- 1.9 2.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFBA90N20DPbF 1000 1000 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 100 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 1 5.0V 0.1 100 5.0V 10 20s PULSE WIDTH Tj = 25C 20s PULSE WIDTH Tj = 175C 0.01 1 0.1 1 10 100 0.1 1 VDS, Drain-to-Source Voltage (V) 3.5 RDS(on) , Drain-to-Source On Resistance 100.00 10.00 T J = 25C 1.00 VDS = 15V 20s PULSE WIDTH 7.0 9.0 11.0 13.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com I D = 98A 3.0 T J = 175C 15.0 2.5 (Normalized) ID, Drain-to-Source Current () 1000.00 5.0 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 0.10 10 VDS, Drain-to-Source Voltage (V) 2.0 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 TJ , Junction Temperature 100 120 140 160 180 ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFBA90N20DPbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 10000 Ciss Coss 1000 Crss 100 10 12.0 ID= 59A VGS, Gate-to-Source Voltage (V) 100000 10.0 VDS= 160V VDS= 100V 8.0 VDS= 40V 6.0 4.0 2.0 0.0 1 10 100 1000 0 20 40 60 80 100 120 140 160 180 200 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000.00 1000 T J = 175C 100.00 100 T J = 25C 10.00 1.00 100sec 10 1 VGS = 0V 1msec 10msec Tc = 25C Tj = 175C Single Pulse 0.1 0.10 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 OPERATION IN THIS AREA LIMITED BY R DS(on) 3.0 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFBA90N20DPbF 100 RD V DS LIMITED BY PACKAGE VGS I D , Drain Current (A) 80 D.U.T. RG + -VDD 10V 60 Pulse Width 1 s Duty Factor 0.1 % 40 Fig 10a. Switching Time Test Circuit VDS 20 90% 0 25 50 75 100 125 TC , Case Temperature 150 175 ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms (Z thJC) 1 D = 0.50 0.1 Thermal Response 0.20 0.10 0.05 0.01 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.001 0.00001 0.0001 0.001 0.01 t1 / t 2 J = P DM x Z thJC +TC 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFBA90N20DPbF 2000 15V DRIVER D.U.T RG + V - DD IAS 20V tp 1600 A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) L VDS ID TOP 24A 42A BOTTOM 59A 1200 800 400 0 25 50 75 100 125 150 175 ( C) Starting T , JJunction Temperature Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 10 V 50K 12V .2F .3F QGS QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFBA90N20DPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + D.U.T + - - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRFBA90N20DPbF Super-220 ( TO-273AA ) Package Outline 11.00 [.433] 10.00 [.394] A 5.00 [.196] 4.00 [.158] 9.00 [. 8.00 [. B 0.25 [ 1.50 [.059] 0.50 [.020] 4 15.00 [.590] 14.00 [.552] 1 2 13.50 [. 12.50 [. 3 4.00 [.157] 3.50 [.138] 14.50 [.570] 13.00 [.512] 3X 2.55 [.100] 4X 1.30 [.051] 0.90 [.036] 0.25 [.010] 2X B A 1.00 [.039] 0.70 [.028] 3.00 [.118] 2.50 [.099] MOSFET IGBT Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.55mH R G = 25, IAS = 59A. ISD 59A, di/dt 170A/s, VDD V(BR)DSS, Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 95A. TJ 175C 8 www.irf.com IRFBA90N20DPbF Super-220 (TO-273AA) Part Marking Information EXAMPLE: THIS IS AN IRFBA22N50A WITH ASSEMBLY LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" PART NUMBER INTERNATIONAL RECTIFIER LOGO IRFBA22N50A 719C 17 89 ASSEMBLY LOT CODE Note: "P" in assembly line position indicates "Lead-Free" DATE CODE YEAR 7 = 1997 WEEK 19 LINE C TOP Super-220 not recommended for surface mount application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04 www.irf.com 9