Reverse Voltage: 200 to 1000 Volts
Forward Current: 0.8,1.0 A
RoHS Device
Page 1
REV:A
Features
-Glass passivated chip junction.
-Plastic materrial has U/L flammability classification 94v-0.
-Save space on printed circuit boards.
-Pb free product.
Mechanical data
-Polarity: Symbol molded on body.
-Case: Molded plastic body over passivated junction.
TB2S-G Thru. TB10S-G
Parameter
Dimensions in inches and (millimeter)
TBS
QW-BBR53
Symbol
Unit
TB4S-G TB6S-G TB8S-G TB10S-G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current
TL=100°C
Peak Forward Surge Current, 8.3ms Single
Half Sine-wave, Superimposed on Rated Load
(JEDEC Method)
Maximum Reverse Current @TA=25°C
at Rated DC Blocking Voltage
Operating Junction Temperature Range
Storage Temperature Range
Notes: 1. On glass epoxy P.C.B
2. On aluminum substrate
VRRM
VRMS
VDC
I(AV)F
IFSM
VF
IR
RθJL
TJ
TSTG
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
30
0.95
10
-55 to +150
-55 to +150
A
A
V
μA
°C/W
°C
°C
0.028 (0.70)
0.024 (0.60)
0.012 (0.30)
0.008 (0.20)
0.264 (6.70)
Comchip Technology CO., LTD.
TB2S-G
200
140
200
Marking
TB4S TB6S TB8S TB10S TB2S
0.060 (1.45)
0.051 (1.15)
0.205 (5.20)
0.189 (4.80)
0.249 (6.30)
0.179 (4.55)
0.167 (4.25)
0.028 (0.70)
0.024 (0.60)
0.161 (4.10)
0.154 (3.90)
+
-
0.006 (0.15)
0.002 (0.05)
-High temperature soldering guaranteed:
-High surge overload rating :30A peak
260°C/10 seconds at 5 ibs.
-Terminals: Plated leads solderable per MIL-STD-750,
-Mounting position: Any.
Method 2026.
1.02)
0.81)
RθJA
25
62.5
80
Typical Thermal Junction to lead
On aluminum substrate
On glass-epoxy substrate
Maximum Instantaneous Forward Voltage
at 0.4A DC
Maximum ratings and electrical characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Silicon Bridge Rectifiers
RATING AND CHARACTERISTIC CURVES (TB2S-G thru TB10S-G)
Ambient temperature, (°C)
150125100755025
Fig.2 Forward Derating Curve -
0
0.25
0.5
0.75
1.0
Average Forward Rectified Current, (A)
Resistive or Inductive Load
Number of Cycles at 60Hz
1
Fig.4 Peak Forward Surge Current -
0
Peak Forward Surge Current, (A)
10
20
30
40
10 100
Pulse width 8.3mS,
single half-sine wave
(JEDEC Method)
Percent of Rated Peak Reverse Voltage, (%)
0
Fig.3 Typical Reverse Characteristics -
1.0
10
100
1000
10000
20 40 60 80 100 120 140
O
TA=25 C
O
TA=100 C
Instantaneous Forward Voltage, (V)
0.7
Fig.1 - Typical Forward Characteristics
0.01
Instantaneous Forward Current, (A)
0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0.1
1.0
Comchip Technology CO., LTD.
QW-BBR53 Page 2
REV:A
0.4
Aluminum Substrate
Glass
P.C.B
Epoxy
10000
Silicon Bridge Rectifiers
Instantaneous Reverse Current, ( A)µ
0
Page 3
Comchip Technology CO., LTD.
QW-BBR53
8.00 0.10± 4.00 ± 0.10 2.00 ± 0.05 12.00 ± 0.30 18.00 ± 0.1
SYMBOL
(mm)
(inch) 0.472 0.012±
0.315 0.004± 0.157 0.004± 0.079 0.002± 0.709 0.004±
E F P P0P1WW1
1.75 0.10±
0.069 0.004±
5.50 0.10±
0.217 0.004±
TBS
0.30 ± 0.05
0.012 ± 0.002
T
o
120
D1
D2
D
W1
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
....... ..............
....... ..............
End Start
Direction of Feed
Reel Taping Specification
T
C
Index hole
d
E
F
B W
P
P0
P1
A
Silicon Bridge Rectifiers
B C dD D2D1
TBS
SYMBOL
(mm)
(inch) 2.953 ± 0.004
1.55 ± 0.05 75 ± 0.1 13.0 0.10±
330 ± 0.1
0.061 0.002± 12.992 ± 0.004 0.512 ± 0.004
5.50 0.10±
0.217 0.004±
6.85 0.10±
0.270 0.004±
2.10 0.10±
0.083 0.004±
A
REV:A
Comchip Technology CO., LTD.
Page 4
REV:A
Standard Packaging
QW-BBR53
A
D
0.027MIN
0.68MIN
4.0±0.1
0.62MIN
0.157±0.004
0.024MIN
6.70MAX 0.264MAX
B
C
Suggested PAD Layout
SIZE
(inch)(mm)
TBS
A
B
C
D
Case Type
TBS 1,500
REEL
( pcs )
Reel Size
(inch)
13
REEL PACK
Silicon Bridge Rectifiers
