MMBT2907AT
Document number: DS30269 Rev. 10 - 2
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MMBT2907AT
60V PNP SMALL SIGNAL TRANSISTOR IN SOT523
Features
BVCEO > -60V
IC = -600mA Collector Current
Epitaxial Planar Die Construction
Ultra-Small Surface Mount Package
Complementary NPN Type: MMBT2222AT
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.002 grams (Approximate)
Ordering Information (Note 4)
Product
Compliance
Marking
Reel Size (inches)
Quantity per Reel
MMBT2907AT-7-F
AEC-Q101
2F
7
3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2010
2011
2012
2013
2014
2015
2016
2017
2018
2019
2020
Code
X
Y
Z
A
B
C
D
E
F
G
H
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Device Symbol
Pin-Out Top View
SOT523
2F = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: A = 2013)
M or M = Month (ex: 9 = September)
C
E
B
2FYM
MMBT2907AT
Document number: DS30269 Rev. 10 - 2
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MMBT2907AT
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-600
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
PD
150
mW
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
833
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 6)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge – Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge – Machine Model
ESD MM
400
V
C
Notes: 5. For a device mounted with the collector lead on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics and Derating Information
MMBT2907AT
Document number: DS30269 Rev. 10 - 2
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MMBT2907AT
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
BVCBO
-60
V
IC = -10µA, IE = 0
Collector-Emitter Breakdown Voltage
BVCEO
-60
V
IC = -10mA, IB = 0
Emitter-Base Breakdown Voltage
BVEBO
-5
V
IE = -10µA, IC = 0
Collector Base Cutoff Current
ICBO
-10
nA
A
VCB = -50V, IE = 0
VCB = -50V, IE = 0, TA = +125°C
Collector Cutoff Current
ICEX
-50
nA
VCE = -30V, VEB(OFF) = -0.5V
Base Cutoff Current
IBL
-50
nA
VCE = -30V, VEB(OFF) = -0.5V
ON CHARACTERISTICS (Note 7)
DC Current Gain
hFE
75
100
100
100
50



300

IC = -100uA, VCE = -10V
IC = -1mA, VCE = -10V
IC = -10mA, VCE = -10V
IC = -150mA, VCE = -10V
IC = -500mA, VCE = -10V
Collector-Emitter Saturation Voltage
VCE(SAT)
-0.4
-1.6
V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage
VBE(SAT)

1.3
2.6
V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
COBO
8
pF
VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance
CIBO
30
pF
VEB = -2V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product
fT
200
MHz
VCE = -20V, IC = -50mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Turn-On Time
tON
45
ns
VCC = -30V, IC = -150mA,
IB1 = -15mA
Delay Time
tD

10
ns
Rise Time
tR
40
ns
Turn-Off Time
tOFF

100
ns
VCC = -6V, IC = -150mA,
IB1 = IB2 = -15mA
Storage Time
tS

80
ns
Fall Time
tF

30
ns
Note: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMBT2907AT
Document number: DS30269 Rev. 10 - 2
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MMBT2907AT
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
MMBT2907AT
Document number: DS30269 Rev. 10 - 2
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MMBT2907AT
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT523
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT523
SOT523
Dim
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
C
1.45
1.75
1.60
D


0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50

0°
8°

All Dimensions in mm
Dimensions
Value (in mm)
Z
1.8
X
0.4
Y
0.51
C
1.3
E
0.7
A
M
JL
D
BC
H
K
G
N
XE
Y
C
Z
MMBT2907AT
Document number: DS30269 Rev. 10 - 2
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MMBT2907AT
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
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failure of the life support device or to affect its safety or effectiveness.
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