MASWSS0204SMB - M/A-Com Technology Solutions

GaAs SPDT 2.7 V High Power Switch

DC - 3.0 GHz

Rev. V3

MASWSS0204

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Features

 Low Voltage Operation: 2.7 V

 High IP3: +56 dBm

 Low Insertion Loss: 0.30 dB at 1 GHz

 High Isolation: 25 dB at 1 GHz

 0.5 micron GaAs PHEMT Process

 Lead-Free SC70 Package

 Halogen-Free ―Green‖ Mold Compound

 260°C Reflow Compatible

 RoHS* Compliant Version of MASWSS0117

Description

The MASWSS0204 is a GaAs pHEMT MMIC single

pole double throw (SPDT) high power switch in a low

cost SC70 six lead package. The MASWSS0204 is

ideally suited for applications where high power, low

control voltage, low insertion loss, high isolation,

small size and low cost are required.

Typical applications are for CDMA handset

systems that connect separate transceiver and/or

GPS functions to a common antenna, as well as

other related handset and general purpose

applications. The MASWSS0204 can be used in all

systems operating up to 3 GHz requiring high power

at low control voltage.

The MASWSS0204 is fabricated using a 0.5 micron

gate length GaAs pHEMT process. The process

features full passivation for performance and

reliability.

Functional Block Diagram

RFC

RF1

GND

RF2

39 pF

Pin 6 Pin 1

39 pF

Pin Configuration

Pin No. Pin Name Description

1 V2 Vcontrol 2

2 RFC RF Common

3 V1 Vcontrol 1

4 RF1 RF Port 1

5 GND RF Ground

6 RF2 RF Port 2

Part Number Package

MASWSS0204 Bulk Packaging

MASWSS0204TR-3000 3000 piece reel

MASWSS0204SMB Sample Test Board

MASWSS0204 orientation in tape

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

1. Reference Application Note M513 for reel size information.

2. All sample boards include 5 loose parts.

Ordering Information 1,2

Note:

Device supplied on tape and reel is the reverse

orientation of that shown in Application Note M513.

GaAs SPDT 2.7 V High Power Switch

DC - 3.0 GHz

Rev. V3

MASWSS0204

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Electrical Specifications: TA = 25°C, Vc = 0 V/2.7 V, Z0 = 50 Ω 3

3. For positive voltage control, external DC blocking capacitors are required on all RF ports.

4. Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 1 GHz, 39 pF for 0.5 - 3 GHz.

Parameter Test Conditions Units Min. Typ. Max.

Insertion Loss4

DC - 1 GHz

1 - 2 GHz

2 - 3 GHz

—

0.30

0.35

0.65

—

Isolation

DC - 1 GHz

1 - 2 GHz

2 - 3 GHz

—

Return Loss DC - 3 GHz dB — 20 —

IP3 825 MHz

Two Tone, +24 dBm Total Pin, 5 MHz Spacing dBm — 56 —

Cross Modulation

For Cell Band: Two-tone signal input:

TX1 = +22 dBm @ 820 MHz,

TX2 = +22 dBm @ 821 MHz,

RX interfere = -23 dBm @ 869 MHz.

dBm —

-99 —

For PCS Band: Two-tone signal input:

TX1 = +18 dBm @ 1880 MHz,

TX2 = +18 dBm @ 1881 MHz,

RX interfere = -23 dBm @ 1960 MHz.

dBm — -94 —

P0.1dB 1 GHz dBm — 38 —

Trise, Tfall 10% to 90% RF, 90% to 10% RF ns — 70 —

Ton, Toff 50% control to 90% RF,

50% control to 10% RF ns — 100 —

Transients In Band mV — 25 —

Control Current VC = 2.7 V µA — 5 20

Truth Table 7,8,9

7. For positive voltage control, external DC blocking capacitors

are required on all RF ports.

8. Differential voltage, V(state 1) - V(state 0), must be +2.7 V

minimum, but must not exceed 8.5 V.

9. 0 = -5 V to +2.3 V, 1 = -2.3 V to +5 V.

V1 V2 ANT– RF1 ANT - RF2

1 0 On Off

0 1 Off On

Absolute Maximum Ratings 5,6

Parameter Absolute Maximum

Input Power

(0.5 - 3 GHz, 3 V Control) +38 dBm

Operating Voltage +8.5 volts

Operating Temperature -40°C to +85°C

Storage Temperature -65°C to +150°C

5. Exceeding any one or combination of these limits may cause

permanent damage to this device.

6. M/A-COM Technology does not recommend sustained

operation near these survivability limits.

GaAs SPDT 2.7 V High Power Switch

DC - 3.0 GHz

Rev. V3

MASWSS0204

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Typical Performance Curves, 39 pF

Isolation

Insertion Loss

Return Loss

Lead-Free SC70 Plastic Package†

Qualification

Qualified to M/A-COM specification REL-201,

Process Flow –2.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be

damaged by static electricity. Proper ESD control

techniques should be used when handling these

devices.

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.5 1.0 1.5 2.0 2.5 3.0

+25°C

+85°C

-40°C

Frequency (GHz)

0.5 1.0 1.5 2.0 2.5 3.0

+25°C

+85°C

-40°C

Frequency (GHz)

0.0 1.0 2.0 3.0 4.0 5.0 6.0

+25°C

+85°C

-40°C

Frequency (GHz)

† Reference Application Note M538 for lead-free solder reflow

recommendations.

Meets JEDEC moisture sensitivity level 1 requirements.

Plating is 100% matte tin over copper.

GaAs SPDT 2.7 V High Power Switch

DC - 3.0 GHz

Rev. V3

MASWSS0204

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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