BFY193
IFAG IMM RPD D HIR 1 of 4 V2, February 2011
HiRel NPN Silicon RF Transistor
HiRel Discrete and Microwave Semiconductor
For low noise, high-gain amplifiers up to 2GHz.
For linear broadband amplifiers
Hermetically sealed microwave package
fT= 8 GHz
F = 2.3 dB at 2 GHz
Space Qualified
ESA/SCC Detail Spec. No.: 5611/006
Type Variant No. 06
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering Code
Pin Configuration
1 2 3 4
Package
BFY193 (ql)
-
see below
C
E
B
E
Micro-X1
(ql) Quality Level: P: Professional Quality
H: High Rel Quality
S: Space Quality
ES: ESA Space Quality
(see order instructions for ordering example)
1 2
34
BFY193
IFAG IMM RPD D HIR 2 of 4 V2, February 2011
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCEO
12
V
Collector-emitter voltage, VBE=0
VCES
20
V
Collector-base voltage
VCBO
20
V
Emitter-base voltage
VEBO
2
V
Collector current
IC
80
mA
Base current
IB
10 1)
mA
Total power dissipation,
TS 104°C 2), 3)
Ptot
580
mW
Junction temperature
Tj
200
C
Operating temperature range
Top
-65...+200
C
Storage temperature range
Tstg
-65...+200
C
Thermal Resistance
Junction-soldering point 3)
Rth JS
< 165
K/W
Notes.:
1) The maximum permissible base current for VFBE measurements is 30mA (spot-
measurement duration < 1s)
2) At TS = + 104 °C. For TS > + 104 °C derating is required.
3) TS is measured on the collector lead at the soldering point to the pcb.
Electrical Characteristics
at TA=25°C; unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-base cutoff current
VCB = 20 V, IE = 0
ICBO
-
-
100
µA
Collector-emitter cutoff current
VCE = 12 V, IB = 0,5µA 1.)
ICEX
-
-
600
µA
Collector-base cutoff current
VCB = 10 V, IE = 0
ICBO
-
-
50
nA
Emitter base cuttoff current
VEB = 2 V, IC = 0
IEBO
-
-
25
A
Emitter base cuttoff current
VEB = 1 V, IC = 0
IEBO
-
-
0.5
A
Notes:
1.) This Test assures V(BR)CE0 > 12V
BFY193
IFAG IMM RPD D HIR 3 of 4 V2, February 2011
Electrical Characteristics (continued)
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Base-Emitter forward voltage
IE = 30 mA, IC = 0
VFBE
-
-
1
V
DC current gain
IC = 30 mA, VCE = 8 V
hFE
50
100
175
-
AC Characteristics
Transition frequency
IC = 40mA, VCE = 5 V, f = 500 MHz
IC = 50 mA, VCE = 8 V, f = 500 MHz
fT
6,5
-
7.5
8
-
-
GHz
Collector-base capacitance
VCB = 10 V, VBE = vbe = 0, f = 1 MHz
CCB
-
0.56
0.75
pF
Collector-emitter capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
CCE
-
0.34
-
pF
Emitter-base capacitance
VEB = 0.5V, VCB = vcb = 0, f = 1 MHz
CEB
-
1.9
2.4
pF
Noise Figure
IC = 15 mA, VCE = 5 V, f = 2 GHz,
ZS = ZSopt
F
-
2.3
2.9
dB
Power gain
IC = 40 mA, VCE = 5V, f = 2 GHz
ZS = ZSopt , ZL= ZLopt
Gma 1.)
12.5
13.5
-
dB
Transducer gain
IC = 40 mA, VCE = 5 V, f = 2 GHz
ZS = ZL = 50
|S21e|2
8
9
-
dB
Output Power
IC = 50 mA, VCE = 5 V, f = 2GHz,
PIN=10dBm, ZS = ZL = 50
POUT
16.5
17.5
-
dBm
Notes.:
1.)
GS
Sk k
ma
21
12 1
2
( )
,
GS
S
ms 21
12
BFY193
IFAG IMM RPD D HIR 4 of 4 V2, February 2011
Micro-X1 Package
Edition 2011-02
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© Infineon Technologies AG 2011
All Rights Reserved.
Attention please!
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or
hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual
property rights of an third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For
information on the types in question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-support devices or systems with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or to
support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
1
2
3
4
