fy, SGS-THOMSON 7 incroe.ectromes BYV 10-20 A SMALL SIGNAL SCHOTTKY DIODE go wa vt ot a DESCRIPTION on Metal to silicon rectifier diode in glass case featur- ing very low foward voltage drop and fast recovery time, intended for low voltage switching mode power : : : : DO 41 supply, polarity protection and high frequency cir- (Glass) cuits. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VrrM Repetitive Peak Reverse Voltage 20 v levavy Average Forward Current* Tamb = 60C 1 A lesu Surge non Repetitive Forward Current Tamb = 25C 25 A tp = 10ms Sinusoidal Pulse Tamb = 25C 50 typ = 300s Rectangular Pulse Tstg Storage and Junction Temperature Range : 65 to 150 ae) i 65 to 125 C TL Maximum Lead Temperature for Soldering during 10s at 4mm 230 C from Case THERMAL RESISTANCE Symbol Parameter Value Unit Rth g-a) Junction-ambient* 110 C/W * On intinite heatsink with 4mm lead length July 1989 1/4 241BYV 10-20 A ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions q Min. Typ. Max. Unit Int Tj = 25C Va = Vaan 0.3 mA Tj = 100C 10 Ve" lp = 1A T, = 25C 0.45 v lp =3A 0.75 Pulsetest: t)<300us 8 < 2%. DYNAMIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit c Tj = 25C Va =0 330 pF | Forward current flow in a schottky rectifier is due to majority carrier conduction. So reverse recovery is not affected by stored charge as in conventional PN junction diodes. Nevertheless, when the device switches from for- ward biased condition to reverse blocking state, cur- rent is required to charge the depletion capacitance of the diode. PACKAGE MECHANICAL DATA DO 41 Glass This current depends only of diode capacitance and external circuit impedance. Satisfactory circuit be- haviour analysis may be performed assuming that schottky rectifier consists of an ideal diode in parai- lel with a variable capacitance equal to the junction capacitance (see fig. 5 page 4/4). 28 min. 4,07 _ semi TE 5,20 \ 28min. 2,04 0,712 0,863 Cooling method : by convection and connection Marking : clear, ring at cathode end. Weight 0.349 2/4 242 kz SGS-THOMSO Tf Menon otro19! Ip {mA) 403 102 10 Ye (4 1078 0 0.2 0.4 0.6 0.8 4 Fig.4 - Forward current versus forward voltage at low level (typical values) . 102 Iq {mA} % confidence 10 1a-4 (C) 10-2 0 50 100 150 Fig.3 - Reverse current versus junction temperature. rc] BYV 10-20 A Ip (A) F () 6.5 1 1.5 Fig.2 - Forward current versus farward voltage at high level {typical values) . Oe 10-4 25 F 10-2 SGS-THOMSON Yana (%} 0 50 100 Fig.4 - Reverse current versus Varnm in per cent. 3/4 MICROELECTRONICS 243BYV 10-20 A C (pF) lege (A) 350 r qv Tj = 25C 300 F---++ _f | I 250 pp] 200 |__} 150 LL 4 100 N M ~ eee, 50 ae VR (V) 0 10 20 10-1 1 10 Fig.5 - Capacitance C versus reverse ap- Fig.6 - Surge non repetitive forward cur- plied voltage VR (typical values) rent for a rectangular putse with t <10 ms. irom (A) 10 ms 1 cycle Number of cycles 1 10 100 4 Fig.7 - Surge non repetitive forward current versus number of cycles. 4/4 hy SGS-THOMSON MICROELECTRONICS 244