IPB039N10N3 G
"%&$!"#™3 Power-Transistor
Features
P' 3 81>>5<>? A=1<<5E5<
P G3 5<<5>C71C53 81A75GR9H"[Z#@A? 4D3 C ( &
P.5AH<? F? >A5B9BC1>3 5R9H"[Z#
P" 9783 DAA5>C3 1@12 9<9CH
P S ? @5A1C9>7C5=@5A1CDA5
P)2 6A55<514@<1C9>7+ ? " ,3 ? =@<91>C
P* D1<9695413 3 ? A49>7C? $ )#6? AC1A75C1@@<93 1C9? >
P" 1<? 75>6A5513 3 ? A49>7C? #
Maximum ratings, 1CTV S D><5BB? C85AF9B5B@53 96954
Parameter Symbol Conditions Unit
? >C9>D? DB4A19>3 DAA5>C I9T8 S *# ).( 6
T8 S ))+
)D<B544A19>3 DAA5>C
*# I9$\`X^Q T8 S .,(
E1<1>3 855>5A7HB9>7<5@D<B5 E6H I9  R=H "+,( Y@
!1C5B? DA3 5E? <C175 V=H p*( J
)? F5A49BB9@1C9? > P_[_ T8 S *), K
( @5A1C9>71>4BC? A175C5=@5A1CDA5 TVT^_S  S
# 3 <9=1C93 3 1C57? AH #' #   
Value
)#$ , - 1>4$ ,
*#, 55697DA5
V9H )(( J
R9H"[Z#$YMc +&1 Y"
I9).( 6
Product Summary
Type #) ' ' !
Package E=%ID*.+%/
Marking (+1C)(C
+ 5E  @175
IPB039N10N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
-85A=1<A5B9BC1>3 5:D>3 C9? >3 1B5 R_T@8 % % (&/ A'K
-85A=1<A5B9BC1>3 5 R_T@6 =9>9=1<6? ? C@A9>C
:D>3 C9? >1=2 95>C 3 =*3 ? ? <9>71A51+# % % ,(
Electrical characteristics, 1CTV S D><5BB? C85AF9B5B@53 96954
Static characteristics
A19>B? DA3 52 A51;4? F>E? <C175 V"7G#9HH V=H . I9 = )(( % % J
!1C5C8A5B8? <4E? <C175 V=H"_T# V9H4V=HI9 U * *&/ +&-
05A? 71C5E? <C1754A19>3 DAA5>C I9HH V9H .V=H . 
TV S % (&) ) q6
V9H . V=H . 
TV S % )( )((
!1C5B? DA3 5<51;1753 DAA5>C I=HH V=H . V9H . % ) )(( Z6
A19>B? DA3 5? >BC1C5A5B9BC1>3 5 R9H"[Z# V=H . I9  % +&+ +&1 Y"
V=H .I9  % ,&) /&)
!1C5A5B9BC1>3 5 R=% )&, % "
I]MZ^O[ZP`O_MZOQ gR^
fV9Hf5*fI9fR9H"[Z#YMc
I9  /. )-* % H
+# 5E93 5? > ==G ==G  ==5@? GH) + F9C8 3 =
*? >5<1H5A U =C893 ;3 ? @@5A1A516? A4A19>
3 ? >>53 C9? >) 9BE5AC93 1<9>BC9<<19A
Values
+ 5E  @175
IPB039N10N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
#>@DC3 1@13 9C1>3 5 CU^^ % .+*( 0,)( \<
( DC@DC3 1@13 9C1>3 5 C[^^ % )*)( ).)(
+ 5E5AB5CA1>B65A3 1@13 9C1>3 5 C]^^ % ,) %
-DA>? >45<1HC9=5 tP"[Z# % */ % Z^
+ 9B5C9=5 t]% -1 %
-DA>? 6645<1HC9=5 tP"[RR# % ,0 %
1<<C9=5 tR% ), %
!1C5 81A
S
5 81A13 C5A9BC93 B
,#
!1C5C? B? DA3 53 81A75 QS^ % *1 +1 Z8
!1C5C? 4A19>3 81A75 QSP % ). %
,F9C3 89>73 81A75 Q^b % *. %
!1C53 81A75C? C1< QS% 00 ))/
!1C5@<1C51DE? <C175 V\XM_QM` % ,&. % J
( DC@DC3 81A75 Q[^^ V99 . V=H . % )** ).* Z8
Reverse Diode
9? 453 ? >C9>? DB6? AF1A43 DAA5>C IH% % ).( 6
9? 45@D<B53 DAA5>C IH$\`X^Q % % .,(
9? 456? AF1A4E? <C175 VH9 V=H .I<  
TV S % ) )&* J
+ 5E5AB5A53 ? E5AHC9=5 t]] % .0 % Z^
+ 5E5AB5A53 ? E5AH3 81A75 Q]] % )+- % Z8
,#, 55697DA5 6? A71C53 81A75@1A1=5C5A4569>9C9? >
VG . I<4100A
Pi<'Pt  U B
T8 S
Values
V=H .V9H . 
f & " I
V99 . V=H .
I9  R=  "
V99 . I9  
V=H C?  .
+ 5E  @175
IPB039N10N3 G
1 Power dissipation 2 Drain current
P_[_4R"T8#I94R"T8V=H" .
3 Safe operating area 4 Max. transient thermal impedance
I94R"V9HT8 S D4( Z_T@84R"t\#
@1A1=5C5At\@1A1=5C5AD4t\'T
U B
U B
U B
=B
=B
98
103
102
101
100
10-1
103
102
101
100
10-1
VDS [V]
ID[A]
<9=9C542 H? >BC1C5
]Q^U^_MZOQ
B9>7<5@D<B5
(&()
(&(*
(&(-
(&)
(&*
(&-
100
10-1
10-2
10-3
10-4
10-5
100
10-1
10-2
tp[s]
ZthJC [K/W]
0
50
100
150
200
250
0 50 100 150 200
TC[°C]
Ptot [W]
0
20
40
60
80
100
120
140
160
180
0 50 100 150 200
TC[°C]
ID[A]
+ 5E  @175
IPB039N10N3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I94R"V9HTV S R9H"[Z#4R"I9TV S
@1A1=5C5AV=H @1A1=5C5AV=H
7 Typ. transfer characteristics 8 Typ. forward transconductance
I94R"V=HJV9Hf5*fI9fR9H"[Z#YMc gR^4R"I9TV S
@1A1=5C5ATV
 .
.
.
 .
.
0
1
2
3
4
5
6
7
8
0 40 80 120 160 200 240
ID[A]
RDS(on) [m ]
S
S
0
50
100
150
200
250
0 2 4 6
VGS [V]
ID[A]
0
40
80
120
160
200
240
0 40 80 120 160 200
ID[A]
gfs [S]
 .
.
 .
.
 .
.
0
50
100
150
200
250
0 1 2
VDS [V]
ID[A]
+ 5E  @175
IPB039N10N3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R9H"[Z#4R"TVI9  V=H . V=H"_T#4R"TVV=H4V9H
@1A1=5C5AI9
11 Typ. capacitances 12 Forward characteristics of reverse diode
C4R"V9HV=H .f & " I I<4R"VH9#
@1A1=5C5ATV
_d\

0
1
2
3
4
5
6
7
8
9
-60 -20 20 60 100 140 180
Tj[°C]
RDS(on) [m ]
U
U
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
Tj[°C]
VGS(th) [V]
8U^^
8[^^
8]^^
104
103
102
101
0 20 40 60 80
VDS [V]
C[pF]
S
S
S 
S 
100
101
102
103
0 0.5 1 1.5 2
VSD [V]
IF[A]
+ 5E  @175
IPB039N10N3 G
13 Avalanche characteristics 14 Typ. gate charge
I6H4R"t6JR=H "V=H4R"QSM_QI9  @D<B54
@1A1=5C5ATV"^_M]_# @1A1=5C5AV99
15 Drain-source breakdown voltage 16 Gate charge waveforms
V7G"9HH#4R"TVI9 =
.
.
.
0
2
4
6
8
10
0 20 40 60 80 100
Qgate [nC]
VGS [V]
90
95
100
105
110
-60 -20 20 60 100 140 180
Tj[°C]
VBR(DSS) [V]
V
=H
Q
gate
V
S ^"_T#
Q
S"_T#
Q
S ^
Q
S P
Q
^b
Q
g
S
S
S
1
10
100
1000
1 10 100 1000
tAV [µs]
IAS [A]
+ 5E  @175
IPB039N10N3 G
PG-TO263-3: Outline
+ 5E  @175
IPB039N10N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
+ 5E  @175