IPB039N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C ( & V 9H )(( J R 9H"[Z#$YMc +&1 Y" I9 ).( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH P S ? @5A1C9>7 C5=@5A1CDA5 P ) 2 6A55 <514 @<1C9 >7 + ? " , 3 ? =@<9 1>C )# P * D1<96954 13 3 ? A49>7 C? $ 6? AC1A75C1@@<9 3 1C9? > P" 1<? 75> 6A55 13 3 ? A49 >7 C? # Type #) ' ' ! Package E=%ID*.+%/ Marking (+1C)(C Maximum ratings, 1CT V S D><5BB? C85AF9B5 B@53 9 6954 Parameter Symbol Conditions ? >C9>D? DB4A19> 3 DAA5>C I9 T 8 S T 8 *# ).( S Unit 6 ))+ ) D<B54 4A19> 3 DAA5>C*# I 9$\X^Q T 8 S .,( E1<1>3 85 5>5A7H B9 >7<5 @D<B5 E 6H I 9 +,( Y@ !1C5 B? DA3 5 E? <C175 V =H p*( J ) ? F5A49BB9@1C9? > P _[_ *), K ( @5A1C9>7 1>4 BC? A175 C5=@5A1CDA5 T V T ^_S )# *# $ , - R =H " T 8 S # 3 <9=1C93 3 1C57? AH #' # + 5E Value S 1>4 $ , , 55 697DA5 @175 IPB039N10N3 G Parameter Values Symbol Conditions Unit min. typ. max. % % (&/ Thermal characteristics -85A=1<A5B9 BC1>3 5 :D>3 C9 ? > 3 1B5 R _T@8 -85A=1<A5B9 BC1>3 5 R _T@6 =9>9 =1<6? ? C@A9>C 3 = * 3 ? ? <9 >7 1A51+# :D>3 C9? > 1=2 9 5>C A'K % % ,( )(( % % * *&/ +&- % (&) ) % )( )(( Electrical characteristics, 1CT V S D><5BB? C85AF9B5 B@53 96954 Static characteristics A19> B? DA3 5 2 A51;4? F> E? <C175 V "7G#9HH V =H . I 9 !1C5 C8A5B8? <4 E? <C175 V =H"_T# V 9H4V =H I 9 05A? 71C5 E? <C175 4A19> 3 DAA5>C I 9HH V 9H . V =H T V S . V 9H . V =H T V S . U J q6 !1C5 B? DA3 5 <51;175 3 DAA5>C I =HH V =H . V 9H . % ) )(( Z6 A19> B? DA3 5 ? > BC1C5 A5B9BC1>3 5 R 9H"[Z# V =H . I 9 % +&+ +&1 Y" % ,&) /&) % )&, % " /. )-* % H V =H . I 9 !1C5 A5B9BC1>3 5 R= I]MZ^O[ZPO_MZOQ g R^ +# 5E935 ? > == G == G == 5@? GH ) 3 ? >>53 C9? > ) 9BE5AC931<9> BC9<<19A + 5E = fV 9Hf5*fI 9fR 9H"[Z#YMc I 9 + F9C8 3 =* ? >5 <1H5A @175 U = C893; 3 ? @@5A1A51 6? A4A19> IPB039N10N3 G Parameter Values Symbol Conditions Unit min. typ. max. % .+*( 0,)( % )*)( ).)( Dynamic characteristics #>@DC3 1@13 9C1>3 5 C U^^ V =H . V 9H f & " I . ( DC@DC3 1@13 9 C1>3 5 C [^^ + 5E5AB5 CA1>B65A3 1@13 9C1>3 5 C ]^^ % ,) % -DA> ? > 45<1H C9=5 t P"[Z# % */ % + 9B5 C9 =5 t] % -1 % -DA> ? 6645<1H C9=5 t P"[RR# % ,0 % tR % ), % !1C5 C? B? DA3 5 3 81A75 Q S^ % *1 +1 !1C5 C? 4A19> 3 81A75 Q SP % ). % % *. % 1<<C9 =5 V 99 . V =H . I 9 R = " \< Z^ !1C5 81AS5 81A13 C5A9 BC93B,# V 99 . I 9 V =H C? . Z8 , F9C3 89 >7 3 81A75 Q ^b !1C5 3 81A75 C? C1< QS % 00 ))/ !1C5 @<1C51D E? <C175 V \XM_QM % ,&. % ( DC@DC3 81A75 Q [^^ % )** ).* Z8 % % ).( 6 % % .,( % ) )&* J % .0 % Z^ % )+- % Z8 V 99 . V =H . J Reverse Diode 9? 45 3 ? >C9>? DB6? AF1A4 3 DAA5>C 9? 45 @D<B5 3 DAA5>C I H$\X^Q 9? 45 6? AF1A4 E? <C175 V H9 + 5E5AB5 A53 ? E5AH C9 =5 t ]] + 5E5AB5 A53 ? E5AH 3 81A75 Q ]] ,# + 5E IH T 8 S V =H . I < T V S V G . I <4100A Pi <'Pt UB , 55 697DA5 6? A71C5 3 81A75 @1A1=5C5A4569>9C9? > @175 IPB039N10N3 G 1 Power dissipation 2 Drain current P _[_4R"T 8# I 94R"T 8 V =H" . 180 250 160 200 140 120 P tot [W] 150 I D [A] 100 80 100 60 40 50 20 0 0 0 50 100 150 200 0 50 T C [C] 100 150 200 T C [C] 3 Safe operating area 4 Max. transient thermal impedance I 94R"V 9H T 8 S D 4( Z _T@84R"t \# @1A1=5C5A t \ @1A1=5C5A D 4t \'T 103 100 <9=9C54 2 H ? > BC1C5 ]Q^U^_MZOQ UB UB UB (&- 102 10 1 (&* Z thJC [K/W] I D [A] =B =B 98 10 -1 (&) (&(- (&(* 10 0 (&() B9>7<5 @D<B5 10-1 10 10-2 -1 10 0 10 1 10 2 10 3 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] + 5E 10-5 @175 IPB039N10N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I 94R"V 9H T V S R 9H"[Z#4R"I 9 T V S @1A1=5C5A V =H @1A1=5C5A V =H 250 8 . . 7 . . 200 6 . R DS(on) [m ] . 150 I D [A] . 100 5 . 4 . . 3 2 . 50 1 0 0 0 1 2 0 40 80 120 V DS [V] 160 200 240 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I 94R"V =H JV 9Hf5*fI 9fR 9H"[Z#YMc g R^4R"I 9 T V S @1A1=5C5A T V 250 240 200 200 160 I D [A] g fs [S] 150 120 100 80 50 40 S S 0 0 0 2 4 6 + 5E 0 40 80 120 160 200 I D [A] V GS [V] @175 IPB039N10N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R 9H"[Z#4R"T V I 9 V =H"_T#4R"T V V =H4V 9H V =H . @1A1=5C5A I 9 9 4 8 3.5 7 3 U 2.5 5 V GS(th) [V] R DS(on) [m ] 6 _d\ 4 U 2 1.5 3 1 2 0.5 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 11 Typ. capacitances C 4R"V 9H V =H . f 60 100 140 180 T j [C] T j [C] 12 Forward characteristics of reverse diode & " I I <4R"V H9# @1A1=5C5A T V 104 103 8U^^ S 8[^^ S 102 I F [A] C [pF] 103 S 102 101 8]^^ S 101 100 0 20 40 60 80 V DS [V] + 5E 0 0.5 1 1.5 2 V SD [V] @175 IPB039N10N3 G 13 Avalanche characteristics 14 Typ. gate charge I 6H4R"t 6J R =H " V =H4R"Q SM_Q I 9 @1A1=5C5A T V"^_M]_# @1A1=5C5A V 99 1000 @D<B54 10 8 100 S . 6 V GS [V] I AS [A] S . . 4 S 10 2 1 0 1 10 100 1000 0 20 15 Drain-source breakdown voltage V 7G"9HH#4R"T V I 9 40 60 80 100 Q gate [nC] t AV [s] 16 Gate charge waveforms = 110 V =H Qg V BR(DSS) [V] 105 100 V S ^"_T# 95 Q S "_T# Q ^b Q S^ 90 -60 -20 20 60 100 140 Q g ate Q SP 180 T j [C] + 5E @175 IPB039N10N3 G PG-TO263-3: Outline + 5E @175 IPB039N10N3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. 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