TC74ACT139P/F/FT
2014-03-01
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TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74ACT139P, TC74ACT139F, TC74ACT139FT
Dual 2-to-4 Line Decoder
The TC74ACT139 is an advanced high speed CMOS 2 to 4
LINE DECODER fabricated with silicon gate and double-layer
metal wiring C2MOS technology.
It achieves the high speed operation similar to equivalent
Bipolar Schottky TTL while maintaining the CMOS low power
dissipation.
This device may be used as a level converter for interfacing
TTL or NMOS to High Speed CMOS. The inputs are compatible
with TTL, NMOS and CMOS output voltage levels.
The active low enable input can be used for gating or it can be
used as a data input for demultiplexing applications.
When the enable input is held “H”, all four outputs are fixed at
a high logic level independent of the other inputs.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
Features
• High speed: tpd = 5.5 ns (typ.) at VCC = 5 V
• Low power dissipation: ICC = 8 μA (max) at Ta = 25°C
• Compatible with TTL outputs: VIL = 0.8 V (max)
VIH = 2.0 V (min)
• Symmetrical output impedance: |IOH| = IOL = 24 mA (min)
Capability of driving 50 Ω
transmission lines.
• Balanced propagation delays: tpLH ∼
−
tpHL
• Pin and function compatible with 74F139
TC74ACT139P
TC74ACT139F
TC74ACT139FT
Weight
DIP16-P-300-2.54A : 1.00 g (typ.)
SOP16-P-300-1.27A : 0.18 g (typ.)
TSSOP16-P-0044-0.65A : 0.06 g (typ.)
Start of commercial production
1988-10
TC74ACT139P/F/FT
2014-03-01
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Pin Assignment
IEC Logic Symbol
Truth Table
Inputs Outputs
Enable Select
G B A
0Y 1Y 2Y 3Y
Selected
Output
H X X H H H H None
L L L L H H H 0Y
L L H H L H H 1Y
L H L H H L H 2Y
L H H H H H L 3Y
X: Don’t care
System Diagram
G
A
B
2/14
3/13
1/15
4/12
5/11
6/10
7/9
3Y
2Y
1Y
0Y
(top view)
VCC 16
2A
2B
15
14
13
12
11
10
1
2
3
4
5
6
7
GND 8 9
1A
1B
G1
0Y1
1Y1
2Y1
3Y1
G2
0Y2
1Y2
2Y2
3Y2
(10)
(5)
X/Y (4)
(7)
(6)
(11)
(12)
0Y1
1
2
EN
(9)
1Y1
2Y1
3Y1
0Y2
1Y2
2Y2
3Y2
(3)
(2)
(1)
(13)
(14)
(15)
1A
1B
G1
2A
2B
G2
0
1
2
3
(10)
(5)
DMUX (4)
(7)
(6)
(11)
(12)
0Y1
0
1 3
0
G
(9)
1Y1
2Y1
3Y1
0Y2
1Y2
2Y2
3Y2
(3)
(2)
(1)
(13)
(14)
(15)
1A
1B
G1
2A
2B
G2
0
1
2
3
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Absolute Maximum Ratings (Note 1)
Characteristics Symbol Rating Unit
Supply voltage range VCC −0.5 to 7.0 V
DC input voltage VIN −0.5 to VCC + 0.5 V
DC output voltage VOUT −0.5 to VCC + 0.5 V
Input diode current IIK ±20 mA
Output diode current IOK ±50 mA
DC output current IOUT ±50 mA
DC VCC/ground current ICC ±200 mA
Power dissipation PD 500 (DIP) (Note 2)/180 (SOP/TSSOP) mW
Storage temperature Tstg −65 to 150 °C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C should be
applied up to 300 mW.
Operating Ranges (Note)
Characteristics Symbol Rating Unit
Supply voltage VCC 4.5 to 5.5 V
Input voltage VIN 0 to VCC V
Output voltage VOUT 0 to VCC V
Operating temperature Topr −40 to 85 °C
Input rise and fall time dt/dV 0 to 10 ns/V
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
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Electrical Characteristics
DC Characteristics
Test Condition Ta = 25°C Ta =
−40 to 85°C
Characteristics Symbol
VCC (V) Min Typ. Max Min Max
Unit
High-level input
voltage VIH ― 4.5 to 5.5 2.0 ― ― 2.0 ― V
Low-level input
voltage VIL ― 4.5 to 5.5 ― ― 0.8 ― 0.8 V
High-level output
voltage VOH
VIN
= VIH or
VIL
IOH = −50 μA
IOH = −24 mA
IOH = −75 mA (Note)
4.5
4.5
5.5
4.4
3.94
―
4.5
―
―
―
―
―
4.4
3.80
3.85
―
―
―
V
Low-level output
voltage VOL
VIN
= VIH or
VIL
IOL = 50 μA
IOL = 24 mA
IOL = 75 mA (Note)
4.5
4.5
5.5
―
―
―
0.0
―
―
0.1
0.36
―
―
―
―
0.1
0.44
1.65
V
Input leakage
current IIN VIN = VCC or GND 5.5 ― ― ±0.1 ― ±1.0 μA
ICC VIN = VCC or GND 5.5 ― ― 8.0 ― 80.0 μA
Quiescent supply
current IC Per input: VIN = 3.4 V
Other input: VCC or GND 5.5 ― ― 1.35 ― 1.5 mA
Note: This spec indicates the capability of driving 50 Ω transmission lines.
One output should be tested at a time for a 10 ms maximum duration.
AC Characteristics (CL = 50 pF, RL = 500 Ω, input: tr = tf = 3 ns)
Test Condition Ta = 25°C Ta =
−40 to 85°C
Characteristics Symbol
VCC (V) Min Typ. Max Min Max
Unit
Propagation delay
time
(A, B- Y)
tpLH
tpHL
― 5.0 ± 0.5 ― 6.2 9.2 1.0 10.5 ns
Propagation delay
time
(G-Y)
tpLH
tpHL
― 5.0 ± 0.5 ― 6.3 9.6 1.0 11.0 ns
Input capacitance CIN ― ― 5 10 ― 10 pF
Power dissipation
capacitance CPD (Note) ― 51 ― ― ― pF
Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD·VCC·fIN + ICC/2 (per becoder)
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Package Dimensions
Weight: 1.00 g (typ.)
TC74ACT139P/F/FT
2014-03-01
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Package Dimensions
Weight: 0.18 g (typ.)
TC74ACT139P/F/FT
2014-03-01
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Package Dimensions
Weight: 0.06 g (typ.)
TC74ACT139P/F/FT
2014-03-01
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