BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 4 -- 23 September 2013 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB production test circuit. Test signal pulsed RF f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) 2.7 to 2.9 32 350 13 50 8 5 1.2 Features and benefits High efficiency Excellent ruggedness Designed for S-band operation (2.7 GHz to 2.9 GHz) Excellent thermal stability Easy power control Integrated ESD protection High flexibility with respect to pulse formats Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications S-band radar applications in the frequent range 2.7 GHz to 2.9 GHz BLS7G2729L(S)-350P NXP Semiconductors LDMOS S-band radar power transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLS7G2729L-350P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 2 1 5 3 3 4 5 4 [1] source 2 sym117 BLS7G2729LS-350P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source 1 1 2 5 3 3 5 4 4 [1] 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description BLS7G2729L-350P - BLS7G2729LS-350P - Version flanged balanced ceramic package; 2 mounting holes; SOT539A 4 leads earless flanged balanced ceramic package; 4 leads SOT539B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage 0.5 +11 V Tstg storage temperature 65 +150 C - 225 C Tj [1] BLS7G2729L-350P_LS-350P Product data sheet junction temperature [1] Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF calculator. All information provided in this document is subject to legal disclaimers. Rev. 4 -- 23 September 2013 (c) NXP B.V. 2013. All rights reserved. 2 of 13 BLS7G2729L(S)-350P NXP Semiconductors LDMOS S-band radar power transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Zth(j-mb) Conditions transient thermal impedance from junction to mounting base Typ Unit tp = 100 s; = 10 % 0.07 K/W tp = 200 s; = 10 % 0.09 K/W tp = 300 s; = 10 % 0.10 K/W tp = 100 s; = 20 % 0.09 K/W Tcase = 85 C; PL = 350 W 6. Characteristics Table 6. DC characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.2 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 220 mA 1.5 1.9 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 39 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA gfs forward transconductance VDS = 10 V; ID = 11.0 A - 16.2 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 7.7 A - 0.065 - Table 7. RF characteristics Test signal: pulsed RF; tp = 300 s; = 10 %; RF performance at VDS = 32 V; IDq = 200 mA; Tcase = 25 C; unless otherwise specified, in a class-AB production circuit. BLS7G2729L-350P_LS-350P Product data sheet Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL = 350 W 11 13 - dB RLin input return loss PL = 350 W - 10 - dB D drain efficiency PL = 350 W 46 50 - % Pdroop(pulse) pulse droop power PL = 350 W - 0 0.5 dB tr rise time PL = 350 W - 8 50 ns tf fall time PL = 350 W - 5 50 ns All information provided in this document is subject to legal disclaimers. Rev. 4 -- 23 September 2013 (c) NXP B.V. 2013. All rights reserved. 3 of 13 BLS7G2729L(S)-350P NXP Semiconductors LDMOS S-band radar power transistor 7. Test information 7.1 Ruggedness in class-AB operation The BLS7G2729L-350P and BLS7G2729LS-350P are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 200 mA; PL = 350 W; tp = 300 s; = 10 %. 7.2 Impedance information Table 8. Typical impedance f ZS[1] ZL[1] GHz 2.7 2.8 j8.7 1.8 j5.1 2.8 3.9 j8.2 2.1 j5.4 2.9 4.8 j9.3 1.5 j5.7 [1] Impedances are taken at a single halve of the push-pull transistor drain 1 gate 1 ZS ZL gate 2 drain 2 Fig 1. BLS7G2729L-350P_LS-350P Product data sheet 001aak544 Definition of transistor impedance All information provided in this document is subject to legal disclaimers. Rev. 4 -- 23 September 2013 (c) NXP B.V. 2013. All rights reserved. 4 of 13 BLS7G2729L(S)-350P NXP Semiconductors LDMOS S-band radar power transistor 7.3 Test circuit information %/6*/ 6 3 5 5 & & & & & 5(9 & & & 5 5(9 & 5 & & %/6*/ 6 3 & DDD Printed-Circuit Board (PCB): Rogers RO6006; r = 6.45 F/m; thickness = 0.635 mm; thickness copper plating = 35 m. The vias can be used as a reference to place components. The above layout shows the test circuit used to measure the devices in production. A more appropriate application demonstration for specific customer needs can be provided. See Table 9 for list of components. Fig 2. Component layout Table 9. List of components See Figure 2 for component layout. Component BLS7G2729L-350P_LS-350P Product data sheet Description Value Remarks C1, C2 SMD capacitor 4.7 F, 50 V C5, C6 multilayer ceramic chip capacitor 12 pF ATC800A C7, C8 multilayer ceramic chip capacitor 20 pF ATC800A C9, C10 multilayer ceramic chip capacitor 12 pF ATC800A ATC700A C11, C12 multilayer ceramic chip capacitor 1 nF C13, C14 electrolytic capacitor 220 F, 63 V R1, R2 SMD resistor 9.1 SMD 0805 R3, R4 SMD resistor 8 SMD 0805 All information provided in this document is subject to legal disclaimers. Rev. 4 -- 23 September 2013 (c) NXP B.V. 2013. All rights reserved. 5 of 13 BLS7G2729L(S)-350P NXP Semiconductors LDMOS S-band radar power transistor 7.4 Graphical data DDD *S G% *S DDD ' ' ' 3/ : VDS = 32 V; IDq = 200 mA. ' (1) f = 2.7 GHz (2) f = 2.8 GHz (2) f = 2.8 GHz (3) f = 2.9 GHz (3) f = 2.9 GHz Power gain and drain efficiency as function of output power; typical values Fig 4. DDD 3/ : DDD ' 3/ G%P Power gain and drain efficiency as function of output power; typical values VDS = 32 V; IDq = 200 mA. (1) f = 2.7 GHz Fig 3. *S *S G% 3L : I 0+] VDS = 32 V; IDq = 200 mA; tp =300 s; = 10 %. VDS = 32 V; IDq = 200 mA; tp = 300 s; = 10 %; PL = 350 W. (1) f = 2.7 GHz (2) f = 2.8 GHz (3) f = 2.9 GHz Fig 5. Output power as a function of input power; typical values BLS7G2729L-350P_LS-350P Product data sheet Fig 6. Drain efficiency as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 -- 23 September 2013 (c) NXP B.V. 2013. All rights reserved. 6 of 13 BLS7G2729L(S)-350P NXP Semiconductors LDMOS S-band radar power transistor DDD *S G% DDD 5/LQ G% I 0+] VDS = 32 V; IDq = 200 mA; tp = 300 s; = 10 %; PL = 350 W. Fig 7. Power gain as a function of frequency; typical values BLS7G2729L-350P_LS-350P Product data sheet I 0+] VDS = 32 V; IDq = 200 mA; tp = 300 s; = 10 %; PL = 350 W. Fig 8. Input return loss as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 -- 23 September 2013 (c) NXP B.V. 2013. All rights reserved. 7 of 13 BLS7G2729L(S)-350P NXP Semiconductors LDMOS S-band radar power transistor 8. Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q 3.30 3.05 2.26 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 0.185 0.465 0.007 1.242 1.241 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 0.165 0.455 0.004 1.218 1.219 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 10-02-02 12-05-02 SOT539A Fig 9. EUROPEAN PROJECTION Package outline SOT539A BLS7G2729L-350P_LS-350P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 23 September 2013 (c) NXP B.V. 2013. All rights reserved. 8 of 13 BLS7G2729L(S)-350P NXP Semiconductors LDMOS S-band radar power transistor Earless flanged balanced ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 0 5 10 mm scale Dimensions Unit(1) w2 w3 0.25 0.25 max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405 0.54 inches nom 0.01 min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.079 1.265 0.395 0.01 mm max nom min A b E E1 4.7 11.81 0.18 31.55 31.52 c D D1 9.5 9.53 4.2 11.56 0.10 30.94 30.96 9.3 9.27 e F H H1 L Q U1 U2 1.75 17.12 25.53 3.48 2.26 32.39 10.29 1.50 16.10 25.27 2.97 2.01 32.13 10.03 13.72 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA sot539b_po European projection Issue date 12-05-02 13-05-24 SOT539B Fig 10. Package outline SOT539B BLS7G2729L-350P_LS-350P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 23 September 2013 (c) NXP B.V. 2013. All rights reserved. 9 of 13 BLS7G2729L(S)-350P NXP Semiconductors LDMOS S-band radar power transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 10. Abbreviations Acronym Description ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal-Oxide Semiconductor MTF Median Time to Failure S-band Short wave Band SMD Surface-Mounted Device VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status BLS7G2729L-350P_LS-350P v.4 20130923 Modifications: * * * * * * * Product data sheet Change notice Supersedes - BLS7G2729L-350P_LS-350P v.3 The status of this document has been changed to Product data sheet. Table 1 on page 1: the table has been updated. Table 1 on page 1: the table has been updated. Table 4 on page 2: value VGS Max changed from +13 to +11. Figure 2 on page 5: notes have been updated. Table 9 on page 5: component C8 has been updated. Section 7.4 on page 6: figures have been updated and added. BLS7G2729L-350P_LS-350P v.3 20130712 Objective data sheet - BLS7G2729L-350P_LS-350P v.2 BLS7G2729L-350P_LS-350P v.2 20130506 Objective data sheet - BLS7G2729L-350P_LS-350P v.1 BLS7G2729L-350P_LS-350P v.1 20110524 Objective data sheet - - BLS7G2729L-350P_LS-350P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 23 September 2013 (c) NXP B.V. 2013. All rights reserved. 10 of 13 BLS7G2729L(S)-350P NXP Semiconductors LDMOS S-band radar power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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This document supersedes and replaces all information supplied prior to the publication hereof. BLS7G2729L-350P_LS-350P Product data sheet Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. 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The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLS7G2729L-350P_LS-350P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 23 September 2013 (c) NXP B.V. 2013. All rights reserved. 12 of 13 NXP Semiconductors BLS7G2729L(S)-350P LDMOS S-band radar power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 Ruggedness in class-AB operation . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Test circuit information . . . . . . . . . . . . . . . . . . . 5 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Handling information. . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2013. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 23 September 2013 Document identifier: BLS7G2729L-350P_LS-350P