TC74ACT08P/F/FT
2014-03-01
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TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74ACT08P, TC74ACT08F, TC74ACT08FT
Quad 2-Input AND Gate
The TC74ACT08 is an advanced high speed CMOS 2-INPUT
AND GATE fabricated with silicon gate and double-layer metal
wiring C2MOS technology.
It achieves the high speed operation similar to equivalent
Bipolar Schottky TTL while maintaining the CMOS low power
dissipation.
This device may be used as a level converter for interfacing
TTL or NMOS to High Speed CMOS. The inputs are compatible
with TTL, NMOS and CMOS output voltage levels.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
Features
• High speed: tpd = 4.7 ns (typ.) at VCC = 5 V
• Low power dissipation: ICC = 4 μA (max) at Ta = 25°C
• Compatible with TTL outputs: VIL = 0.8 V (max)
VIH = 2.0 V (min)
• Symmetrical output impedance: |IOH| = IOL = 24 mA (min)
Capability of driving 50 Ω
transmission lines.
• Balanced propagation delays: tpLH ∼
−
tpHL
• Pin and function compatible with 74F08
TC74ACT08P
TC74ACT08F
TC74ACT08FT
Weight
DIP14-P-300-2.54 : 0.96 g (typ.)
SOP14-P-300-1.27A : 0.18 g (typ.)
TSSOP14-P-0044-0.65A : 0.06 g (typ.)
Start of commercial production
1988-10
TC74ACT08P/F/FT
2014-03-01
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Pin Assignment IEC Logic Symbol
Truth Table
A B Y
L L L
L H L
H L L
H H H
Absolute Maximum Ratings (Note 1)
Characteristics Symbol Rating Unit
Supply voltage range VCC −0.5 to 7.0 V
DC input voltage VIN −0.5 to VCC + 0.5 V
DC output voltage VOUT −0.5 to VCC + 0.5 V
Input diode current IIK ±20 mA
Output diode current IOK ±50 mA
DC output current IOUT ±50 mA
DC VCC/ground current ICC ±100 mA
Power dissipation PD 500 (DIP) (Note 2)/180 (SOP/TSSOP) mW
Storage temperature Tstg −65 to 150 °C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C should be
applied up to 300 mW.
VCC
9
4B
4A
4Y
8
14
13
12
11
10
1A 1
2
3
4
5
6
7
2A
2B
2Y
GND
3B
3A
3Y
(top view)
1B
1Y
(4)
(9)
(5)
2A
&
3A
2B
(12)
(10)
(13)
4A
3B
(6)
(8)
(11)
2Y
3Y
4Y
4B
(1)
(2)
1A
1B
(3) 1Y
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Operating Ranges (Note)
Characteristics Symbol Rating Unit
Supply voltage VCC 4.5 to 5.5 V
Input voltage VIN 0 to VCC V
Output voltage VOUT 0 to VCC V
Operating temperature Topr −40 to 85 °C
Input rise and fall time dt/dV 0 to 10 ns/V
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Electrical Characteristics
DC Characteristics
Test Condition Ta = 25°C Ta =
−40 to 85°C
Characteristics Symbol
VCC (V) Min Typ. Max Min Max
Unit
High-level input
voltage VIH ― 4.5 to 5.5 2.0 ― ― 2.0 ― V
Low-level input
voltage VIL ― 4.5 to 5.5 ― ―0.8 ― 0.8 V
High-level output
voltage VOH VIN
= VIH
IOH = −50 μA
IOH = −24 mA
IOH = −75 mA (Note)
4.5
4.5
5.5
4.4
3.94
―
4.5
―
―
―
―
―
4.4
3.80
3.85
―
―
―
V
Low-level output
voltage VOL
VIN
= VIH or
VIL
IOL = 50 μA
IOL = 24 mA
IOL = 75 mA (Note)
4.5
4.5
5.5
―
―
―
0.0
―
―
0.1
0.36
―
―
―
―
0.1
0.44
1.65
V
Input leakage
current IIN VIN = VCC or GND 5.5 ― ―±0.1 ― ±1.0 μA
ICC VIN = VCC or GND 5.5 ― ―4.0 ― 40.0 μA
Quiescent supply
current IC
Per input: VIN = 3.4 V
Other input: VCC or GND
5.5 ― ―1.35 ― 1.5 mA
Note: This spec indicates the capability of driving 50 Ω transmission lines.
One output should be tested at a time for a 10 ms maximum duration.
AC Characteristics (CL = 50 pF, RL = 500 Ω, input: tr = tf = 3 ns)
Test Condition Ta = 25°C Ta =
−40 to 85°C
Characteristics Symbol
VCC (V) Min Typ. Max Min Max
Unit
Propagation delay
time
tpLH
tpHL
― 5.0 ± 0.5 ― 5.4 8.7 1.0 10.0 ns
Input capacitance CIN ― ― 5 10 ― 10 pF
Power dissipation
capacitance CPD (Note) ― 21 ― ― ― pF
Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD·VCC·fIN + ICC/4 (per gate)
TC74ACT08P/F/FT
2014-03-01
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Package Dimensions
Weight: 0.96 g (typ.)
TC74ACT08P/F/FT
2014-03-01
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Package Dimensions
Weight: 0.18 g (typ.)
TC74ACT08P/F/FT
2014-03-01
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Package Dimensions
Weight: 0.06 g (typ.)
TC74ACT08P/F/FT
2014-03-01
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