HSS104 Silicon Epitaxial Planar Diode for High Speed Switching Features * Short reverse recovery time and forward recovery time. Suitable for Smm pitch high speed automatical insertion. * Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Outline ih FF {E} Cathode band 1, Cathode Type No. Cathode band Package Code 2. Anode HSS104 Blue MHD Absolute Maximum Ratings (Ta = 25C) Item Symbol Value Unit Peak reverse voltage Vam 40 Vv Reverse voltage Vr 35 Vv Peak forward current lem 300 mA Non Repetitive peak forward surge current lesa * 0.4 A Average forward current ly 110 mA Power dissipation Pg 300 mW Junction temperature Ty, 175 C Storage temperature T stg -65 to +175 C Within 1s forward surge current Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Condition Forward voltage Ve _ _ 1.2 V Ir = 100 mA Reverse current IR _ _ 0.5 pA VR 238 V Capacitance Cc _ 3.0 pF Vp = 0.5 V, f = 1 MHz Reverse recovery time t,, _ _ 3.0 ns Ip=10mA, Va=6V, R_=500Q 117HSS104 Forward current Ir (A) 0 Capacitance C (pF) 1.0 0.2 0.4 0.6 0.8 Forward voltage Ve (V) Fig.1 Forward current Vs. Forward voltage 10 Reverse voltage Va (V) Fig.3 Capacitance Vs. Reverse voitage 1.0 107 Reverse current Ip (A) 10 20 30 40 50 Reverse voltage Vp (V) Fig.2 Reverse current Vs. Reverse voltage 118