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BFP520
1
2
3
4
Low Noise Silicon Bipolar RF Transistor
• Low noise amplifier designed for low voltage
applications, ideal for 1.2 V or 1.8 V supply
voltage. Supports Vcc = 2.9 V with enough
external collector resistance.
• High gain and low noise at high frequencies
due to high transit frequency fT = 45 GHz
• Common e.g. in cordless phones and satellite
receivers
• Easy to use Pb-free (RoHS compliant) and
halogen free industry standard package with
visible leads
• Qualification report according to AEC-Q101
available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP520 APs 1=B 2=E 3=C 4=E - - SOT343
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage
TA = 25 °C
T
A
= -55 °C
VCEO
2.5
2.4
V
Collector-emitter voltage VCES 10
Collector-base voltage VCBO 10
Emitter-base voltage VEBO 1
Collector current IC50 mA
Base current IB5
Total power dissipation1)
TS ≤ 105 °C
Ptot 125 mW
Junction temperature TJ150 °C
Storage temperature TSt
g
-55 ... 150
1TS is measured on the emitter lead at the soldering point to pcb
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BFP520
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS 450 K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 2.5 3 3.5 V
Collector-emitter cutoff current
VCE = 2 V, VBE = 0
VCE = 10 V, VBE = 0
ICES
-
-
1
-
30
1000
nA
Collector-base cutoff current
VCB = 2 V, IE = 0
ICBO - - 30
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
IEBO - 100 3000
DC current gain
IC = 20 mA, VCE = 2 V, pulse measured
hFE 70 110 170 -
1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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BFP520
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 30 mA, VCE = 2 V, f = 2 GHz
fT32 45 - GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.07 0.13 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.3 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.33 -
Minimum noise figure
IC = 2 mA, VCE = 2 V, ZS = ZSopt ,
f = 1.8 GHz
NFmin - 0.95 - dB
Power gain, maximum stable1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt ,
f = 1.8 GHz
Gms - 24 - dB
Insertion power gain
VCE = 2 V, IC = 20 mA, f = 1.8 GHz,
ZS = ZL = 50 Ω
|S21|2- 21.5 -
Third order intercept point at output
VCE = 2 V, IC = 20 mA, f = 1.8 GHz,
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 7 mA, f = 1.8 GHz,
ZS = ZSopt, ZL = ZLopt
IP3
-
-
25
17
-
-
dBm
1dB compression point at output
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt, f = 1.8 GHz
IC = 7 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt, f = 1.8 GHz
P-1dB
-
-
12
5
-
-
1Gms = |S21 / S12|
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BFP520
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
10
20
30
40
50
60
70
80
90
100
110
120
mW
140
Ptot
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0 0.5 1 1.5 2 V3
VCB
0
0.05
0.1
0.15
0.2
pF
0.3
CCB
Third order Intercept Point IP3 = ƒ (IC)
(Output, ZS = ZL = 50 Ω )
VCE = parameter, f = 900 MHz
Transition frequency fT= ƒ(IC)
f = 2 GHz
VCE = parameter in V
0 5 10 15 20 25 30 35 mA 45
IC
0
4
8
12
16
20
24
28
32
36
40
44
GHz
52
fT
2
1
0.75
0.5
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BFP520
Power gain Gma, Gms, |S21|2 = ƒ (f)
VCE = 2 V, IC = 20 mA
01234GHz 6
f
0
4
8
12
16
20
24
28
32
36
dB
44
G
Gms
Gma
|S21|²
Power gain Gma, Gms = ƒ (IC)
VCE = 2V
f = parameter in GHz
0 5 10 15 20 25 30 35 mA 45
IC
0
4
8
12
16
20
24
dB
32
G
0.9
1.8
2.4
3
4
5
6
Power gain Gma, Gms = ƒ (VCE)
IC = 20 mA
f = parameter in GHz
0 0.5 1 1.5 2 V3
VCE
0
4
8
12
16
20
24
dB
32
G
0.9
1.8
2.4
3
4
5
6
Minimum noise figure NFmin = ƒ(IC)
VCE = 2 V, ZS = ZSopt
0 5 10 15 20 25 30 mA 40
IC
0
0.5
1
1.5
2
dB
3
F
f = 6 GHz
f = 5 GHz
f = 4 GHz
f = 3 GHz
f = 2.4 GHz
f = 1.8 GHz
f = 0.9 GHz
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Noise figure F = ƒ(IC)
VCE = 2 V, f = 1.8 GHz
0 5 10 15 20 25 30 mA 40
IC
0
0.5
1
1.5
2
dB
3
F
Zs = 50Ohm
Zs = Zsopt
Minimum noise figure NFmin= ƒ(f)
VCE = 2 V, ZS = ZSopt
012345GHz 6.5
f
0
0.5
1
1.5
2
dB
3
F
IC = 5 mA
IC = 2 mA
Source impedance for min.
noise figure vs. frequency
VCE = 2 V, IC = 2 mA / 5 mA
100
+j10
-j10
50
+j25
-j25
25
+j50
-j50
10
+j100
-j100
0
3GHz
4GHz
5GHz
6GHz
0.45GHz
0.9GHz
1.8GHz
2mA
5mA
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BFP520
SPICE GP Model
For the SPICE Gummel Poon (GP) model as well as for the S-parameters
(including noise parameters) please refer to our internet website
www.infineon.com/rf.models.
Please consult our website and download the latest versions before actually
starting your design.You find the BFP520 SPICE GP model in the internet
in MWO- and ADS-format, which you can import into these circuit simulation tools
very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC and high frequency simulations. The terminals of the
model circuit correspond to the pin configuration of the device. The model
parameters have been extracted and verified up to 10 GHz using typical devices.
The BFP520 SPICE GP model reflects the typical DC- and RF-performance
within the limitations which are given by the SPICE GP model itself. Besides the DC
characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise)
and intermodulation have been extracted.
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BFP520
Package SOT343
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BFP520
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
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only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
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