BFP520 Low Noise Silicon Bipolar RF Transistor * Low noise amplifier designed for low voltage 3 applications, ideal for 1.2 V or 1.8 V supply 2 4 voltage. Supports Vcc = 2.9 V with enough 1 external collector resistance. * High gain and low noise at high frequencies due to high transit frequency fT = 45 GHz * Common e.g. in cordless phones and satellite receivers * Easy to use Pb-free (RoHS compliant) and halogen free industry standard package with visible leads * Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking BFP520 APs Pin Configuration 1=B 2=E 3=C 4=E - Package - SOT343 Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA = 25 C 2.5 TA = -55 C 2.4 Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 1 Collector current IC 50 Base current IB 5 Total power dissipation1) Ptot 125 mW Junction temperature TJ 150 C Storage temperature TStg mA TS 105 C 1T -55 ... 150 S is measured on the emitter lead at the soldering point to pcb 1 2013-04-23 BFP520 Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit 450 K/W Values Unit Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol min. typ. max. 2.5 3 3.5 DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 Collector-emitter cutoff current nA ICES VCE = 2 V, VBE = 0 - 1 30 VCE = 10 V, VBE = 0 - - 1000 ICBO - - 30 IEBO - 100 3000 hFE 70 110 170 Collector-base cutoff current VCB = 2 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain - IC = 20 mA, VCE = 2 V, pulse measured 1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2013-04-23 BFP520 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 32 45 - Ccb - 0.07 0.13 Cce - 0.3 - Ceb - 0.33 - NFmin - 0.95 - dB Gms - 24 - dB |S21|2 - 21.5 - AC Characteristics (verified by random sampling) Transition frequency fT GHz IC = 30 mA, VCE = 2 V, f = 2 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure IC = 2 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Insertion power gain VCE = 2 V, IC = 20 mA, f = 1.8 GHz, ZS = ZL = 50 Third order intercept point at output IP3 dBm VCE = 2 V, IC = 20 mA, f = 1.8 GHz, - 25 - - 17 - ZL = ZLopt, f = 1.8 GHz IC = 7 mA, VCE = 2 V, ZS = ZSopt , - 12 - ZL = ZLopt, f = 1.8 GHz - 5 - ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 7 mA, f = 1.8 GHz, ZS = ZSopt, ZL = ZLopt 1dB compression point at output P-1dB IC = 20 mA, VCE = 2 V, ZS = ZSopt, 1G ms = |S 21 / S12 | 3 2013-04-23 BFP520 Total power dissipation P tot = (TS) Collector-base capacitance Ccb = (VCB ) f = 1MHz 0.3 140 mW pF 120 110 CCB Ptot 100 90 0.2 80 0.15 70 60 50 0.1 40 30 0.05 20 10 0 0 15 30 45 60 75 90 105 120 C 0 0 150 0.5 1 1.5 2 TS V 3 VCB Third order Intercept Point IP3 = (IC) Transition frequency fT= (IC) (Output, ZS = ZL = 50 ) f = 2 GHz VCE = parameter, f = 900 MHz VCE = parameter in V 52 GHz 2 44 40 1 fT 36 32 28 24 0.75 20 16 12 8 0.5 4 0 0 5 10 15 20 25 30 35 mA 45 IC 4 2013-04-23 BFP520 Power gain Gma, Gms, |S21|2 = (f) Power gain Gma, Gms = (IC) VCE = 2 V, IC = 20 mA VCE = 2V f = parameter in GHz 32 44 dB 0.9 dB 36 32 Gms 1.8 24 G G 2.4 28 20 3 24 4 16 20 |S21| 5 Gma 6 12 16 12 8 8 4 4 0 0 1 2 3 4 GHz 0 0 6 5 10 15 20 25 30 35 mA 45 IC f Power gain Gma, Gms = (VCE ) Minimum noise figure NFmin = (IC) VCE = 2 V, ZS = ZSopt IC = 20 mA f = parameter in GHz 32 3 0.9 dB dB 1.8 24 20 2 3 F G 2.4 4 16 1.5 5 f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz 6 12 1 8 0.5 4 0 0 0.5 1 1.5 2 V 0 0 3 VCE 5 10 15 20 25 30 mA 40 IC 5 2013-04-23 BFP520 Noise figure F = (IC ) Minimum noise figure NFmin = (f) VCE = 2 V, f = 1.8 GHz VCE = 2 V, ZS = ZSopt 3 3 dB dB F 2 F 2 1.5 1.5 1 1 Zs = 50Ohm Zs = Zsopt 0.5 0 0 IC = 5 mA IC = 2 mA 0.5 5 10 15 20 25 mA 30 0 0 40 IC 1 2 3 4 5 GHz 6.5 f Source impedance for min. noise figure vs. frequency VCE = 2 V, IC = 2 mA / 5 mA +j50 +j25 +j100 +j10 3GHz 4GHz 1.8GHz 0.9GHz 5GHz 6GHz 0 10 25 50 100 0.45GHz 2mA 5mA -j10 -j25 -j100 -j50 6 2013-04-23 BFP520 SPICE GP Model For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design.You find the BFP520 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP520 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. 7 2013-04-23 Package SOT343 8 BFP520 2013-04-23 BFP520 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 2013-04-23 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: BFP520H6327XTSA1