© 2000 IXYS All rights reserved 1 - 2
Features
• Package with copper base plate
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• ¼" fast-on power terminals
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
• Small and light weight
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated
① for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and
dimensions.
VRSM VRRM Type
VDSM VDRM
VV
800 800 xxx 70-08io7
1200 1200 xxx 70-12io7
1400 1400 xxx 70-14io7
1600 1600 xxx 70-16io7
xxx = type
IdAV = 70 A
VRRM = 800-1600 V
Symbol Test Conditions Maximum Ratings
IdAV ①TC = 85°C, module 7 0 A
IdAVM ①module 70 A
IFRMS, ITRMS per leg 36 A
IFSM, ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 550 A
VR = 0 V t = 8.3 ms (60 Hz), sine 600 A
TVJ = TVJM t = 10 ms (50 Hz), sine 500 A
VR = 0 V t = 8.3 ms (60 Hz), sine 550 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 1520 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 1520 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 1250 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 1250 A2s
(di/dt)cr TVJ = 125°C repetitive, IT = 50 A 150 A/ms
f = 50 Hz, tP = 200 ms
VD = 2/3 VDRM
IG = 0.3 A, non repetitive, IT = 1/2 • IdAV 500 A/ms
diG/dt = 0.3 A/ms
(dv/dt)cr TVJ = TVJM; VDR = 2/3 V DRM 1000 V/ms
RGK = ¥; method 1 (linear voltage rise)
VRGM 10 V
PGM TVJ = TVJM tp = 30 ms£10 W
IT = ITAVM tp = 500 ms£5W
tp = 10 ms £1W
PGAVM 0.5 W
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL £ 1 mA t = 1 s 3000 V~
MdMounting torque (M5) 5 ± 15 % Nm
(10-32 UNF) 44 ± 15 % lb.in.
Weight 50 g
Preliminary data
VVZ 70 VVZF 70
VT O 70 VT OF 70
Three Phase
Rectifier Bridge
C
D
E
A
23
B
1
546
VTOF 70
C
D
E
A
23
B
1
546
VTO 70
VVZ 70
C
D
E
A
23
B
1A
C
D
E
23
B
1
VVZF 70
008
© 2000 IXYS All rights reserved 2 - 2
Symbol Test Conditions Characteristic Values
ID, IRTVJ = TVJM; VR = VRRM; VD = VDRM £5mA
VTIT= 80 A; TVJ = 25°C £1.64 V
VT0 For power-loss calculations only 0.85 V
rT11 mW
VGT VD = 6 V; TVJ = 25°C £1.5 V
TVJ = -40°C £1.6 V
IGT VD = 6 V; TVJ = 25°C £100 mA
TVJ = -40°C £200 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM £0.2 V
IGD £5mA
ILTVJ = 25°C; tP = 10 ms£450 mA
IG = 0.45 A; diG/dt = 0.45 A/ms
IHTVJ = 25°C; VD = 6 V; RGK = ¥£200 mA
tgd TVJ = 25°C; VD = 1/2 VDRM £2ms
IG = 0.45 A; diG/dt = 0.45 A/ms
tqTVJ = TVJM; IT = 20 A, tP = 200 ms; di/dt = -10 A/ms typ. 250 ms
VR = 100 V; dv/dt = 15 V/ms; VD = 2/3 VDRM
RthJC per thyristor / Diode; DC 0.9 K/W
per module 0.15 K/W
RthJH per thyristor / Diode; DC 1.1 K/W
per module 0.157 K/W
dSCreeping distance on surface 16.1 mm
dACreepage distance in air 7.5 mm
aMax. allowable acceleration 50 m/s2
VVZ 70 VVZF 70
VT O 70 VT OF 70
