V
RRM
= 800 V - 1000 V
I
F
= 85 A
Features
• High Surge Capability DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol FR85K(R)05 Unit
Re
etitive
eak reverse
2. Reverse polarity (R): Stud is anode.
FR85K05 thru FR85MR05
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions FR85M(R)05
Silicon Fast
Recover
Diode
• Types from 800 V to 1000 V V
RRM
voltage
RRM
RMS reverse voltage V
RMS
560 V
DC blocking voltage V
DC
800 V
Continuous forward current I
F
85 A
Operating temperature T
j
-55 to 150 °C
Storage temperature T
stg
-55 to 150 °C
Parameter Symbol FR85K(R)05 Unit
Diode forward voltage 1.3
25 μA
20 mA
Recovery Time
Maximum reverse recovery
time T
RR
500 nS
700
1000
85
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
R
= 100 V, T
j
= 125 °
V1.3
25
20
500
V
R
= 100 V, T
j
= 25 °C
I
F
= 85 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
1369
T
C
= 25 °C, t
p
= 8.3 ms
FR85M(R)05
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
A1369
-55 to 150
Reverse current I
R
V
F
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
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