FMN1 / FMP1 / IMN10 / IMN11 / IMP11 /
Diodes UMN1N / UMP1N / UMN11N / UMP11N
z
zz
zAbsolute maximum ratings (Ta=25°C)
∗1 Not to exceed 200mW per element.
∗2 Not to exceed 120mW per element.
Type V
R (
V) I
FM (
mA) Pd (mW)
UMN1N 80 80 80 25 0.25 150
FMP1
UMP1N 80 80 80 25 0.25 150 −55~+150
IMN10 80 80 300 100 4 150 −55~+150
80 80 300 100 4 150 −55~+150
80 80 300 100 4 150 −55~+150
150/80
150/80
−55~+150
FMN1
300 ∗1
150 ∗2
150 ∗2
UMN11N
IMN11
UMP11N
IMP11
V
RM (
V) (1µs) (TOTAL)
I
O (
mA) Isurge
(
A)
Peak
reverse
voltage
DC
reverse
voltage Tj
(°C)
Tstg
(°C)
Peak
forward
current
Mean
rectifying
current
Surge
current Power
dissipation Junction
temperature Storage
temperature
z
zz
zElectrical characteristics (Ta=25°C)
Type Cond.
V
F
(
V)
Max. Cond. Cond. Max.
Cond. C
T
(
pF)
Max.Max.
I
F
(
mA)
V
R
(
V) I
F
(
mA)
V
R
(
V)
f (MHz)
V
R
(
V)
FMN1
UMN1N 0.9 5 0.1 70 3.5 6 1 4 6 5
FMP1
UMP1N 0.9 5 0.1 70 3.5 6 1 4 6 5
IMN10 1.2 100 0.1 70 3.5 6 1 4 6 5
1.2 100 0.1 70 3.5 6 1 4 6 5
1.2 100 0.1 70 3.5 6 1 4 6 5
t
rr
(ns)
I
R
(µ
A)
UMN11N
IMN11
UMP11N
IMP11
Forward voltage Reverse recovery timeReverse current
Capacitance between terminals
z
zz
zElectrical characteristic curves (Ta=25°C)
0
0
125
100
75
50
25
25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta (°C)
POWER DISSIPATION : P
d
/ P
dMax. (%)
Fig.1 Power reduction curve
85°C
0
Ta=25°C
50
°C
−30°C
0.1
0.2
0.5
1
2
5
10
20
50
0.2 0.4 0.6 0.8 1.0 1.2
0
°C
FORWARD CURRENT : IF (mA)
FORWARD VOLTAGE : VF (V)
Fig.2 Forward characteristics
(P Type)
0
Ta=100°C
75°C
50°C
25°C
0°C
−25°C
1 000
100
10
1.0
0.1
0.01
10 20 30 40 50
REVERSE CURRENT : I
R
(nA)
REVERSE VOLTAGE : V
R
(V)
Fig.3 Reverse characteristics
(P Type)