1C3D10065E Rev. -
C3D10065E
Silicon Carbide Schottky Diode
Z-Rec® RectifieR
Features
• 650-VoltSchottkyRectier
• ZeroReverseRecoveryCurrent
• ZeroForwardRecoveryVoltage
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonVF
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies
• PowerFactorCorrection
• MotorDrives
Package
TO-252-2
Maximum Ratings (TC=25˚Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 650 V
VRSM SurgePeakReverseVoltage 650 V
VDC DCBlockingVoltage 650 V
IFContinuousForwardCurrent
32
15
10
A
TC=25˚C
TC=135˚C
TC=153˚C
Fig.3
IFRM RepetitivePeakForwardSurgeCurrent 43.5
28 ATC=25˚C,tP =10ms,HalfSineWave
TC=110˚C,tP=10ms,HalfSineWave
IFSM Non-RepetitivePeakForwardSurgeCurrent 90
71 ATC=25˚C,tp=10ms,HalfSineWave
TC=110˚C,tp=10ms,HalfSineWave Fig.8
IF,Max Non-RepetitivePeakForwardSurgeCurrent 860
680 ATC=25˚C,tP = 10 µs,Pulse
TC=110˚C,tP = 10 µs,Pulse Fig.8
Ptot PowerDissipation 150
65 WTC=25˚C
TC=110˚C Fig.4
TJ,Tstg OperatingJunctionandStorageTemperature -55 to
+175 ˚C
Part Number Package Marking
C3D10065E TO-252-2 C3D10065
VRRM = 650 V
IF (TC=135˚C) = 15 A
Qc  = 24nC
PIN1
PIN2 CASE
2C3D10065E Rev. -
40
50
60
70
80
90
100
Reverse Leakage Current, I
RR (mA)
T
J
= 175 °C
T
J
= 125 °C
T
J
= 75 °C
T
= 25
°
C
0
10
20
30
0 100 200 300 400 500 600 700 800 900 1000
Reverse Leakage Current, I
Reverse Voltage, VR(V)
T
J
= -55 °C
T
J
= 25
°
C
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForwardVoltage 1.5
2.0
1.8
2.4 VIF = 10 A TJ=25°C
IF = 10 A TJ=175°C Fig.1
IRReverseCurrent 10
20
50
200 μAVR = 650 V TJ=25°C
VR = 650 V TJ=175°C Fig.2
QCTotalCapacitiveCharge 24 nC
VR=650V,IF = 10 A
di/dt = 500 A/μs
TJ=25°C
Fig.5
C TotalCapacitance
460.5
44
40
pF
VR=0V,TJ=25°C,f=1MHz
VR=200V,TJ=25˚C,f=1MHz
VR=400V,TJ=25˚C,f=1MHz
Fig.6
ECCapacitanceStoredEnergy 3.6 μJ VR = 400 V Fig.7
Note:
1. Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Unit Note
RθJC ThermalResistancefromJunctiontoCase 1.0 °C/W Fig.9
Typical Performance
Figure1.ForwardCharacteristics Figure2.ReverseCharacteristics
020040060080010001200
10
15
20
25
30
F(A)
T
J
= -55 °C
T
J
= 25 °C
T
J
= 75 °C
T
J
= 175 °C
T
J
= 125 °C
0
5
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Foward Voltage, VF(V)
IF (A)
VF (V) VR (V)
IR (mA)
3C3D10065E Rev. -
40
60
80
100
I
F(A)
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
0
20
25 50 75 100 125 150 175
T
C
(°C)
Figure3.CurrentDerating Figure4.PowerDerating
60
80
100
120
140
160
0
20
40
25 50 75 100 125 150 175
Figure5.TotalCapacitanceChargevs.ReverseVoltage Figure6.Capacitancevs.ReverseVoltage
Typical Performance
15
20
25
30
35
40
Capacitive Charge, Q
C
(nC)
Conditions:
T
J
= 25 °C
0
5
10
0 100 200 300 400 500 600 700
Capacitive Charge, Q
Reverse Voltage, V
R
(V)
200
250
300
350
400
450
500
Capacitance (pF)
Conditions:
TJ= 25 °C
Ftest = 1 MHz
Vtest = 25 mV
0
50
100
150
0 1 10 100 1000
Capacitance (pF)
Reverse Voltage, V
R
(V)
IF(peak) (A)
TC ˚C TC ˚C
PTot (W)
C (pF)
VR (V)
QC (nC)
VR (V)
4C3D10065E Rev. -
4
5
6
7
8
9
10
Capacitance Stored Energy, E
C
(µ
µ
µ
µJ)
0
1
2
3
0 100 200 300 400 500 600 700
Capacitance Stored Energy, E
Reverse Voltage, V
R
(V)
Typical Performance
100
1,000
I
FSM
(A)
T
J
= 25 °C
T
J
= 110 °C
10
10E-6 100E-6 1E-3 10E-3
Time, t
p
(s)
Figure7.CapacitanceStoredEnergy Figure8.Non-repetitivepeakforwardsurgecurrent
versuspulseduration(sinusoidalwaveform)
tp (s)
IFSM (A)
VR (V)
EC(mJ)
Figure9.TransientThermalImpedance
100E-3
1
Thermal Resistance (oC/W)
0.5
0.3
0.1
0.05
0.02 SinglePulse
1E-3
10E-3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Time, t
p
(s)
0.01
Thermal Resistance (˚C/W)
T (Sec)
5C3D10065E Rev. -
Recommended Solder Pad Layout
Part Number Package Marking
C3D10065E TO-252-2 C3D10065
Note: Recommended soldering proles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
POS Inches Millimeters
Min Max Min Max
A.250 .289 6.350 7.341
B .197 .215 5.004 5.461
C .027 .050 .686 1.270
D* .270 .322 6.858 8.179
E.178 .182 4.521 4.623
F .025 .045 .635 1.143
G44˚ 46˚ 44˚ 46˚
H.380 .410 9.652 10.414
J.090TYP 2.286TYP
K6˚ 8˚ 6˚ 8˚
L .086 .094 2.184 2.388
M .018 .034 .457 .864
N .035 .050 .889 1.270
P.231 .246 5.867 6.248
Q0.00 .005 0.00 .127
RR0.010TYP R0.254TYP
S.017 .023 .432 .584
T.038 .045 .965 1.143
U .021 .029 .533 .737
Package Dimensions
PackageTO-252-2
Note:
*Tab“D”maynotbepresent
*
 TO-252-2
66 C3D10065E Rev. -
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacdebrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrol
systems,orairtrafccontrolsystems.
Notes
• Cree SiC Schottky diode portfolio: http://www.cree.com/diodes
• C3D Spice models: http://response.cree.com/Request_Diode_model
• SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns
RelatedLinks
Diode Model
VT
RT
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VfT = VT +If*RT
VT =0.94+(TJ *-1.3*10-3)
RT =0.044+(TJ *4.4*10-4)
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Cree, Inc.:
C3D10065E