MICROWAVE POWER GaAs FET TIM7785-16SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level HIGH POWER P1dB=42.5dBm at 7.7GHz to 8.5GHz HIGH GAIN G1dB=5.5dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL P1dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add G1dB IDS1 ( Ta= 25C ) CONDITIONS VDS= 10V f= 7.7 to 8.5GHz G IM3 IDS2 Tch Two-Tone Test Po=31.5dBm (Single Carrier Level) (VDS X IDS + Pin - P1dB) UNIT dBm MIN. 41.5 TYP. MAX. 42.5 dB 4.5 5.5 A 4.4 5.0 dB % dBc -42 29 -45 0.8 A C 4.4 5.0 80 UNIT mS MIN. MAX. TYP. 3600 V -1.0 -2.5 -4.0 A 10.5 V -5 C/W 1.5 2.0 X Rth(c-c) Recommended Gate Resistance(Rg): 100 (Max.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITIONS VDS= 3V IDS= 6.0A VDS= 3V IDS= 60mA VDS= 3V VGS= 0V IGS= -200A Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL ( Ta= 25C ) Gm VGSoff The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Oct. 2006 TIM7785-16SL ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 14.0 Total Power Dissipation (Tc= 25 C) PT W 75 Channel Temperature Tch C 175 Storage Temperature Tstg C -65 to +175 PACKAGE OUTLINE (2-16G1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM7785-16SL RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=10V IDS4.4A Pout(dBm) Pin=37.0dBm 43 42 41 40 7.7 7.9 8.1 8.3 8.5 Frequency (GHz) Output Power(Pout) vs. Input Power(Pin) 45 freq.=8.1GHz 44 VDS=10V IDS4.4A 43 80 42 70 41 60 40 50 39 40 add 38 30 37 20 36 10 29 31 33 35 Pin(dBm) 3 37 39 add(%) Pout(dBm) Pout TIM7785-16SL POWER DISSIPATION vs. CASE TEMPERATURE 90 PT (W) 60 30 0 0 40 80 120 200 160 Tc (C) IM3 vs. Output Power Characteristics -10 VDS=10V IDS4.4A -20 freq.=8.1GHz f=5MHz IM3(dBc) -30 -40 -50 -60 27 29 31 33 Pout(dBm) @Single carrier level 4 35 37 MICROWAVE POWER GaAs FET TIM7785-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=42.5dBm at 7.7GHz to 8.5GHz HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain SYMBOL ( Ta= 25C ) CONDITIONS P1dB UNIT MIN. TYP. MAX. dBm 41.5 42.5 dB 7.5 8.5 A 4.4 5.0 Compression Point Power Gain at 1dB Gain VDS= 10V G1dB Compression Point IDSset=3.6A f = 7.7 to 8.5GHz Drain Current IDS1 Gain Flatness G dB 0.6 Power Added Efficiency add % 35 3rd Order Intermodulation IM3 dBc -44 -47 Distortion Drain Current Channel Temperature Rise Two-Tone Test Po= 31.5dBm IDS2 (Single Carrier Level) A 4.4 5.0 Tch (VDS X IDS + Pin - P1dB) C 80 UNIT MIN. mS 3600 V -1.0 -2.5 -4.0 A 10.5 V -5 C/W 1.5 1.8 X Rth(c-c) Recommended gate resistance(Rg) : Rg= 100 (MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage VGSO Thermal Resistance ( Ta= 25C ) CONDITIONS VDS= 3V IDS= 6.0A VDS= 3V IDS= 60mA VDS= 3V VGS= 0V IGS= -200A Rth(c-c) Channel to Case TYP. MAX. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jun. 2009 TIM7785-16UL ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 14 Total Power Dissipation (Tc= 25 C) PT W 83.3 Channel Temperature Tch C 175 Storage Tstg C -65 to +175 PACKAGE OUTLINE (2-16G1B) Unit in mm c Gate d Source e Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM7785-16UL RF PERFORMANCE Output Power vs. Frequency 45 VDS= 10V IDS 4.4A Pin= 34.0dBm 43 42 41 40 7.4 7.6 7.8 8 8.2 8.4 8.6 8.8 Frequency (GHz) Output Power vs. Input Power 45 90 f= 8.1GHz VDS= 10V IDS 4.4A 44 80 Po 43 70 42 60 41 50 40 40 add 39 30 38 20 37 10 36 0 27 29 31 33 Pin (dBm) 3 35 37 add (%) Po (dBm) Po (dBm) 44 TIM7785-16UL Power Dissipation vs. Case Temperature 100 80 P T (W) 60 40 20 0 0 40 80 120 160 200 Tc () IM3 vs. Output Power Characteristics -20 VDS= 10V IDS 4.4A f= 8.1GHz f= 5MHz IM 3 (dBc) -30 -40 -50 -60 27 29 31 33 35 Po(dBm), Single Carrier Level 4 37